STP75NF20 Equivalent & Substitute Parts

Part Overview

The STP75NF20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 75A continuous drain current at 25°C. This device operates in the STripFET™ series and is housed in a TO-220-3 through-hole package. The part is Active status and RoHS3 compliant, suitable for high-current switching applications requiring robust thermal performance at 190W maximum power dissipation.

Equivalent and substitute parts are identified when design requirements change, inventory constraints occur, or alternative sourcing becomes necessary while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	75	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	34 mOhm @ 37A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	84	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	3260	pF @ 25V
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the STP75NF20 are classified based on strict electrical and mechanical compatibility criteria. All substitute devices must meet the following mandatory parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 200V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package/Case: TO-220-3 (exact match required)
Mounting Type: Through Hole (exact match required)
RoHS Status: ROHS3 Compliant (exact match required)

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitutes rated 34A to 86A are acceptable; parts with lower ratings require application current verification, while higher ratings provide design margin
Rds On (Max): Substitutes ranging from 20 mOhm to 45 mOhm are acceptable; lower values indicate improved efficiency
Gate Charge (Qg): Substitutes ranging from 21 nC to 220 nC are acceptable; lower values reduce switching losses
Power Dissipation (Max): Substitutes ranging from 136W to 480W are acceptable; higher ratings provide thermal margin
Operating Temperature Range: Substitutes with -55°C to 150°C or extended ranges (-55°C to 175°C) are acceptable
Gate Voltage (Vgs): Substitutes rated ±20V or ±30V are acceptable

Substitutes that deviate from critical matching parameters are not electrically or mechanically compatible and are excluded from this reference.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Diss. Max (W)	Temp Range (°C)	Package
STP75NF20	STMicroelectronics	200	75	34 @ 37A	84	190	-55 to 150	TO-220-3
IRFB260NPBF	Infineon Technologies	200	56	40 @ 34A	220	380	-55 to 175	TO-220-3
FDP2614	onsemi	200	62	27 @ 31A	99	260	-55 to 150	TO-220-3
FDP61N20	onsemi	200	61	41 @ 30.5A	75	417	-55 to 150	TO-220-3
IPP320N20N3GXKSA1	Infineon Technologies	200	34	32 @ 34A	29	136	-55 to 175	TO-220-3
IRFB4127PBF	Infineon Technologies	200	76	20 @ 44A	150	375	-55 to 175	TO-220-3
IRFB4227PBF	Infineon Technologies	200	65	24 @ 46A	98	330	-40 to 175	TO-220-3
IXFP36N20X3	IXYS	200	36	45 @ 18A	21	176	-55 to 150	TO-220-3
IXFP36N20X3M	IXYS	200	36	45 @ 18A	21	36	-55 to 150	TO-220-3
IXTP86N20T	IXYS	200	86	29 @ 500mA	90	480	-55 to 175	TO-220-3
SUP57N20-33-E3	Vishay Siliconix	200	57	33 @ 30A	130	300	-55 to 175	TO-220-3

Engineering Selection Recommendations

All substitute parts listed are Active status devices with RoHS3 compliance and REACH Unaffected designation, meeting regulatory requirements equivalent to the STP75NF20.

Direct Current Rating Substitutes (56A to 86A): IRFB260NPBF, FDP2614, FDP61N20, IRFB4127PBF, IRFB4227PBF, IXTP86N20T, and SUP57N20-33-E3 provide continuous drain current ratings within or exceeding the STP75NF20 specification. These devices are suitable for applications where the full 75A rating is required or where design margin is beneficial. IRFB4127PBF and IXTP86N20T offer the highest current ratings (76A and 86A respectively) with improved on-resistance characteristics.

Lower Current Rating Substitutes (34A to 36A): IPP320N20N3GXKSA1, IXFP36N20X3, and IXFP36N20X3M are rated for 34A and 36A respectively. These devices are suitable only for applications where the circuit current requirement does not exceed their rated continuous drain current. IXFP36N20X3M features an isolated tab variant with reduced power dissipation rating (36W) and is suitable for isolated mounting configurations.

Thermal Performance Considerations: Devices with higher power dissipation ratings (IRFB260NPBF at 380W, FDP61N20 at 417W, IXTP86N20T at 480W) provide enhanced thermal performance and are suitable for high-frequency switching or continuous high-current applications. Devices with lower power dissipation ratings (IPP320N20N3GXKSA1 at 136W, IXFP36N20X3M at 36W) are suitable for lower-power applications or where thermal management is less critical.

Temperature Range Considerations: Substitutes with extended operating temperature ranges (-55°C to 175°C) include IRFB260NPBF, IPP320N20N3GXKSA1, IRFB4127PBF, IRFB4227PBF, IXTP86N20T, and SUP57N20-33-E3. The STP75NF20 operates to 150°C. Extended temperature range devices provide design margin for high-ambient or high-dissipation applications.

On-Resistance Characteristics: FDP2614 offers the lowest on-resistance (27 mOhm @ 31A), followed by IRFB4127PBF (20 mOhm @ 44A) and IXTP86N20T (29 mOhm @ 500mA). Lower on-resistance reduces conduction losses and heat generation. Higher on-resistance devices (IXFP36N20X3 and IXFP36N20X3M at 45 mOhm) are suitable for lower-current applications where efficiency is less critical.

Frequently Asked Questions (FAQ)

Q: Can I substitute a lower current-rated device (34A or 36A) for the STP75NF20 (75A)?

A: No. Lower current-rated devices are not suitable for applications requiring the full 75A continuous drain current. Substitution with lower-rated devices is only valid if the actual circuit current requirement does not exceed the substitute device's rating. Exceeding the rated continuous drain current causes device failure and circuit malfunction.

Q: What is the difference between IXFP36N20X3 and IXFP36N20X3M?

A: Both devices have identical electrical specifications (36A, 200V, 45 mOhm on-resistance). The primary difference is the package variant: IXFP36N20X3 uses standard TO-220-3 mounting, while IXFP36N20X3M features an isolated tab variant. The isolated tab variant has a significantly lower power dissipation rating (36W vs. 176W) due to thermal isolation and is suitable for isolated mounting configurations where the tab is not connected to a heat sink.

Q: Are all substitute parts pin-compatible with the STP75NF20?

A: Yes. All substitute parts use the TO-220-3 package with identical pin configuration (Gate, Drain, Source). Physical pin compatibility is guaranteed. However, electrical performance characteristics vary; verify that the substitute device's electrical specifications meet your application requirements before substitution.

Q: Which substitute offers the best thermal performance?

A: IXTP86N20T provides the highest power dissipation rating at 480W (Tc), followed by FDP61N20 at 417W and IRFB260NPBF at 380W. These devices are suitable for high-frequency switching or continuous high-current applications requiring maximum thermal margin. Selection depends on your specific thermal management requirements and circuit operating conditions.

Q: Can I use a substitute with a higher Vgs(th) rating?

A: Yes. All substitute devices have Vgs(th) ratings of 4V or 5V at the specified test current (250µA or 90µA). These variations are within acceptable gate drive compatibility ranges for standard 10V gate drive circuits. Verify that your gate driver can supply the required gate voltage and current for the selected substitute device.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and gate driver power requirements. Lower Qg values (21 nC for IXFP36N20X3 series) result in faster switching and lower gate driver losses. Higher Qg values (220 nC for IRFB260NPBF) result in slower switching and higher gate driver power dissipation. Select based on your circuit's switching frequency and gate driver capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH Unaffected, meeting regulatory requirements equivalent to the STP75NF20. All devices are suitable for applications requiring environmental compliance certification.

Q: Which substitute has the lowest on-resistance?

A: IRFB4127PBF offers the lowest on-resistance at 20 mOhm @ 44A, followed by IXTP86N20T at 29 mOhm @ 500mA and FDP2614 at 27 mOhm @ 31A. Lower on-resistance reduces conduction losses and improves efficiency in high-current applications.

Q: Can I substitute based on current rating alone?

A: No. Current rating is only one parameter. Verify that the substitute device meets all critical matching parameters: 200V Vdss, N-Channel type, MOSFET technology, TO-220-3 package, through-hole mounting, and RoHS3 compliance. Additionally, confirm that on-resistance, gate charge, power dissipation, and operating temperature range are compatible with your application requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message