STP50NE10 N-Channel 100V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The STP50NE10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 50A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for general-purpose switching applications requiring moderate current handling at 100V operation.

The STP50NE10 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this device.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-State Resistance (Rds On) @ 25A, 10V	27	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the STP50NE10 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must equal or exceed 50A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 4V ±1V @ specified test current
On-State Resistance (Rds On): Lower values indicate improved performance; values between 18–36 mOhm are acceptable
Power Dissipation: Must support thermal requirements of the application
Operating Temperature Range: Must include -55°C to 175°C or equivalent

Substitute parts are grouped into two categories:

Category A – Direct Equivalents (Vdss = 100V, Id ≥ 50A): Parts meeting or exceeding the STP50NE10 electrical specifications with identical voltage and current ratings.

Category B – Functional Alternatives (Vdss = 100V, Id ≥ 44A): Parts with slightly lower current ratings but sufficient for applications with reduced current demands, maintaining full voltage compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Power Dissipation (W)	Package	Product Status	RoHS Compliance
STP50NE10	STMicroelectronics	100	50 (Tc)	27 @ 25A, 10V	4 @ 250µA	180 (Tc)	TO-220-3	Obsolete	Non-compliant
IRF3710PBF	Infineon Technologies	100	57 (Tc)	23 @ 28A, 10V	4 @ 250µA	200 (Tc)	TO-220-3	Active	ROHS3 Compliant
IRF3710ZPBF	Infineon Technologies	100	59 (Tc)	18 @ 35A, 10V	4 @ 250µA	160 (Tc)	TO-220-3	Active	ROHS3 Compliant
HUF75639P3	onsemi	100	56 (Tc)	25 @ 56A, 10V	4 @ 250µA	200 (Tc)	TO-220-3	Active	ROHS3 Compliant
PHP45NQ10T,127	NXP Semiconductors	100	47 (Tc)	25 @ 25A, 10V	4 @ 1mA	150 (Tc)	TO-220-3	Active	ROHS3 Compliant
IRF1310NPBF	Infineon Technologies	100	42 (Tc)	36 @ 22A, 10V	4 @ 250µA	160 (Tc)	TO-220-3	Active	ROHS3 Compliant
IXTP44N10T	IXYS	100	44 (Tc)	30 @ 22A, 10V	4.5 @ 25µA	130 (Tc)	TO-220-3	Active	ROHS3 Compliant
IXTP75N10P	IXYS	100	75 (Tc)	25 @ 500mA, 10V	5.5 @ 250µA	360 (Tc)	TO-220-3	Active	ROHS3 Compliant
AOT414	Alpha & Omega Semiconductor Inc.	100	43 (Tc)	25 @ 20A, 10V	4 @ 250µA	115 (Tc)	TO-220-3	Not For New Designs	ROHS3 Compliant
PSMN017-80PS,127	Nexperia USA Inc.	80	50 (Tc)	17 @ 10A, 10V	4 @ 1mA	103 (Tc)	TO-220-3	Obsolete	ROHS3 Compliant
RFP50N06	Harris Corporation	60	50 (Tc)	22 @ 50A, 10V	4 @ 250µA	131 (Tc)	TO-220-3	Obsolete	Non-compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (100V Rating, ≥50A Current):

The following parts are recommended as direct substitutes for the STP50NE10 based on matching or exceeding electrical specifications, active product status, and RoHS3 compliance:

IRF3710PBF – Infineon Technologies HEXFET® series. Rated 100V, 57A (Tc), with 23 mOhm on-state resistance. Active product status with ROHS3 compliance. Superior current rating and lower on-state resistance provide improved thermal performance.
HUF75639P3 – onsemi UltraFET™ series. Rated 100V, 56A (Tc), with 25 mOhm on-state resistance. Active product status with ROHS3 compliance. Comparable electrical performance with established supply availability.
IRF3710ZPBF – Infineon Technologies HEXFET® series. Rated 100V, 59A (Tc), with 18 mOhm on-state resistance. Active product status with ROHS3 compliance. Lowest on-state resistance among recommended options, suitable for high-efficiency applications.

Secondary Substitutes (100V Rating, 44–47A Current):

The following parts are suitable for applications where current requirements are ≤47A:

PHP45NQ10T,127 – NXP Semiconductors TrenchMOS™ series. Rated 100V, 47A (Tc), with 25 mOhm on-state resistance. Active product status with ROHS3 compliance.
IXTP44N10T – IXYS Trench series. Rated 100V, 44A (Tc), with 30 mOhm on-state resistance. Active product status with ROHS3 compliance.

Not Recommended:

AOT414 – Product status "Not For New Designs" indicates manufacturer discontinuation trajectory.
PSMN017-80PS,127 – Reduced voltage rating (80V) limits application scope.
RFP50N06 – Reduced voltage rating (60V) and RoHS non-compliance.

Frequently Asked Questions (FAQ)

Q1: Can the STP50NE10 be directly replaced with IRF3710PBF?

A: Yes. Both devices share identical voltage ratings (100V), comparable current ratings (50A vs. 57A), and identical package configuration (TO-220-3). The IRF3710PBF offers superior on-state resistance (23 mOhm vs. 27 mOhm) and active product status. Pin-to-pin compatibility is confirmed for standard TO-220-3 applications.

Q2: What is the significance of the "Obsolete" product status for the STP50NE10?

A: Obsolete status indicates the manufacturer has discontinued production and support. Existing inventory may be available from distributors, but long-term supply cannot be guaranteed. Active substitute parts ensure continued design support, updated datasheets, and reliable supply chains for new production runs and field replacements.

Q3: Are all recommended substitutes RoHS3 compliant?

A: Yes. All recommended primary and secondary substitutes carry ROHS3 compliance certification. The original STP50NE10 is RoHS non-compliant. Substitution with RoHS3-compliant parts aligns with current regulatory requirements and industry standards.

Q4: Can I use PSMN017-80PS,127 as a substitute?

A: PSMN017-80PS,127 is not recommended as a direct substitute. Although it maintains 50A current rating and TO-220-3 packaging, the reduced voltage rating (80V vs. 100V) restricts its use to applications operating below 80V. This part is suitable only for designs with lower voltage requirements.

Q5: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) represents continuous drain current at a specified case temperature, typically 25°C. Ta (ambient temperature) represents continuous drain current at ambient temperature. Tc ratings are more conservative and are the standard reference for component selection. All comparisons in this document use Tc ratings.

Q6: How do I determine which substitute is best for my application?

A: Selection depends on three factors: (1) Required drain current – if ≤47A, secondary substitutes are acceptable; if >47A, use primary substitutes. (2) Thermal constraints – lower on-state resistance (Rds On) reduces heat generation; IRF3710ZPBF offers the lowest value at 18 mOhm. (3) Supply availability – IRF3710PBF has the highest inventory (165,200 pcs) among active parts.

Q7: Are there any gate drive voltage differences between the STP50NE10 and recommended substitutes?

A: All recommended substitutes operate with 10V gate drive voltage, matching the STP50NE10 specification. Gate threshold voltages (Vgs(th)) are consistent at 4V ±0.5V across all parts, ensuring compatible gate drive circuits without modification.

Q8: Can I use IXTP75N10P for applications requiring only 50A?

A: Yes. IXTP75N10P is rated for 75A continuous current, exceeding the 50A requirement. The higher current rating provides design margin and improved thermal performance due to lower on-state resistance (25 mOhm). However, the higher power dissipation rating (360W vs. 180W) may indicate larger die size, which is not a disadvantage for this application.

Q9: What is the impact of different gate charge (Qg) values on circuit design?

A: Gate charge affects gate drive circuit design and switching speed. The STP50NE10 specifies 166 nC @ 10V. Recommended substitutes range from 61–130 nC @ 10V. Lower gate charge enables faster switching and reduced gate drive power consumption. Existing gate drive circuits designed for 166 nC will operate safely with lower gate charge devices; no circuit modification is required.

Q10: Are all substitute parts available in the same packaging options?

A: All recommended substitutes are available in TO-220-3 through-hole packaging, matching the STP50NE10 configuration. Tube packaging is standard for all active parts. No alternative package options (such as surface-mount) are included in this substitution list.

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