STP45NE06 Equivalent & Substitute Parts

Part Overview

The STP45NE06 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 45A continuous drain current in a TO-220 through-hole package. This device is part of the STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating packaging variations.

Key Parameters

Parameter	STP45NE06	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	45	A
Rds On (Max) @ Id, Vgs	28 mOhm @ 22.5A, 10V	—
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	80	nC @ 10V
Power Dissipation (Max)	100	W (Tc)
Operating Temperature (TJ)	175	°C
Package Type	TO-220-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the STP45NE06 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must equal or exceed 45A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V specification
Maximum Gate Voltage (Vgs Max) must accommodate ±20V operation
Rds On characteristics must support equivalent or superior on-state performance

Mechanical Compatibility Criteria:

Through-hole mounting type required
Package footprint compatibility with TO-220 or equivalent pinout

Substitutes are grouped into two categories:

Direct TO-220 Package Substitutes (NDP6060, HUF76423P3): Maintain identical or compatible through-hole footprint with TO-220-3 pinout, enabling direct board-level replacement without layout modification.
Functionally Equivalent Substitutes with Package Variation (IRFZ44PBF, IRFZ44RPBF, IRFZ44L): Meet or exceed all electrical specifications but utilize TO-220AB or TO-262-3 packaging, requiring footprint verification before implementation.

Parameter Comparison

Parameter	STP45NE06	NDP6060	HUF76423P3	IRFZ44PBF	IRFZ44RPBF	IRFZ44L	Unit
Manufacturer	STMicroelectronics	onsemi	onsemi	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	60	60	60	60	60	60	V
Id @ 25°C	45	48	35	50	50	50	A
Rds On (Max) @ Vgs 10V	28 mOhm @ 22.5A	25 mOhm @ 24A	30 mOhm @ 35A	28 mOhm @ 31A	28 mOhm @ 31A	28 mOhm @ 31A	—
Vgs(th) @ 250µA	4	4	3	4	4	4	V
Gate Charge (Qg) @ 10V	80	70	34	67	67	67	nC
Vgs (Max)	±20	±20	±16	±20	±20	±20	V
Power Dissipation (Max)	100 (Tc)	100 (Tc)	85 (Tc)	150 (Tc)	150 (Tc)	150 (Tc)	W
Operating Temperature (TJ)	175	-65 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220AB	TO-220AB	TO-262-3	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	—

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

NDP6060 (onsemi): This substitute provides the closest electrical match to the STP45NE06, with 48A continuous drain current, 25 mOhm Rds On, and identical TO-220-3 packaging. The device is ROHS3 compliant and active in production. Operating temperature range extends to -65°C, providing enhanced low-temperature performance. Power dissipation rating of 100W matches the original specification. This part is suitable for direct board-level substitution without layout modification.

IRFZ44PBF and IRFZ44RPBF (Vishay Siliconix): Both devices deliver 50A continuous drain current, exceeding the STP45NE06 specification by 5A, with matching 28 mOhm Rds On and 150W power dissipation. Both are ROHS3 compliant and active in production. Package designation is TO-220AB, which maintains TO-220 pinout compatibility. IRFZ44RPBF offers higher inventory availability (5420 units) compared to IRFZ44PBF (1446 units). These parts are suitable for direct replacement where TO-220AB footprint compatibility is confirmed.

Secondary Substitute (Conditional Use):

HUF76423P3 (onsemi): This UltraFET™ series device is ROHS3 compliant and active in production. However, continuous drain current is rated at 35A, which is 10A below the STP45NE06 specification. This part is suitable only for applications where the actual operating current does not exceed 35A. Gate charge is significantly lower at 34 nC, providing faster switching characteristics. TO-220-3 packaging enables direct board replacement.

Alternative with Package Variation:

IRFZ44L (Vishay Siliconix): This device provides 50A continuous drain current and 150W power dissipation in a TO-262-3 package. While electrically superior, the TO-262-3 footprint differs from TO-220, requiring PCB layout modification. This part is not ROHS3 compliant. Use only when board redesign is feasible and RoHS compliance is not required.

Compliance Considerations:

For applications requiring ROHS3 compliance, NDP6060, IRFZ44PBF, IRFZ44RPBF, and HUF76423P3 are compliant alternatives. IRFZ44L and the original STP45NE06 are non-compliant. All substitute parts maintain EAR99 export classification and REACH unaffected status consistent with the original device.

Frequently Asked Questions (FAQ)

Q: Can the NDP6060 directly replace the STP45NE06 on an existing PCB?

A: Yes. The NDP6060 maintains identical TO-220-3 pinout and through-hole footprint. All electrical parameters meet or exceed the STP45NE06 specification. No board layout modification is required.

Q: What is the difference between IRFZ44PBF and IRFZ44RPBF?

A: Both devices are electrically identical with 50A continuous drain current, 28 mOhm Rds On, and TO-220AB packaging. The primary difference is inventory availability and packaging format. IRFZ44RPBF is supplied in tube packaging with significantly higher stock (5420 units versus 1446 units for IRFZ44PBF).

Q: Why is HUF76423P3 listed as a substitute if it only provides 35A?

A: HUF76423P3 is included as a substitute for applications where the actual operating drain current does not exceed 35A. The device offers superior gate charge characteristics (34 nC versus 80 nC) and is ROHS3 compliant. Verification of actual circuit current requirements is necessary before selection.

Q: Can IRFZ44L be used as a substitute?

A: IRFZ44L is electrically equivalent with 50A continuous drain current and superior 150W power dissipation. However, the TO-262-3 package footprint differs from the STP45NE06 TO-220-3 package. PCB layout modification is required. Additionally, IRFZ44L is not ROHS3 compliant. Use only when board redesign is feasible and RoHS compliance is not a requirement.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution is determined by: (1) Drain-to-Source Voltage (Vdss) equal to or exceeding 60V, (2) Continuous Drain Current (Id) equal to or exceeding 45A at 25°C, (3) Gate Threshold Voltage (Vgs(th)) compatible with 4V specification, (4) Maximum Gate Voltage (Vgs Max) accommodating ±20V operation, and (5) Rds On characteristics supporting equivalent or superior on-state performance.

Q: Are all substitute parts ROHS3 compliant?

A: No. NDP6060, HUF76423P3, IRFZ44PBF, and IRFZ44RPBF are ROHS3 compliant. IRFZ44L and the original STP45NE06 are non-compliant. Compliance requirements must be verified for your application before part selection.

Q: What is the operating temperature range for each substitute?

A: STP45NE06 operates to 175°C (TJ). NDP6060 extends to -65°C to 175°C. HUF76423P3, IRFZ44PBF, IRFZ44RPBF, and IRFZ44L all operate from -55°C to 175°C. Selection depends on application temperature requirements.

Q: Can I use a substitute with higher current rating than the original?

A: Yes. Substitutes with higher continuous drain current ratings (IRFZ44 series at 50A versus STP45NE06 at 45A) are suitable for direct replacement. The higher rating provides design margin and does not create compatibility issues. Verify that gate drive circuitry can accommodate any differences in gate charge (Qg) specifications.

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