STP20NF06 N-Channel MOSFET 60V 20A TO-220 Equivalent & Substitute Parts

Part Overview

The STP20NF06 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 20A continuous drain current in a TO-220 through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement. The part belongs to the STripFET™ II series and is RoHS3 compliant with unlimited moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On) @ 10A, 10V	70	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	18	nC
Power Dissipation (Max)	60	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP20NF06 is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 60V. Substitute parts with lower Vdss ratings (55V) operate within reduced voltage margins and are suitable only for applications with maximum operating voltages below 55V.

Current Rating Compatibility: The continuous drain current (Id) must equal or exceed 20A at 25°C. Substitute parts with higher current ratings provide additional thermal margin and switching capacity without functional degradation.

On-State Resistance (Rds On): The on-state resistance at specified gate and drain conditions determines power dissipation and thermal performance. Parts with lower Rds On values dissipate less heat; parts with equivalent or slightly higher Rds On remain functionally compatible.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with higher gate charge require longer switching times but remain compatible with standard gate driver circuits.

Package and Mounting: All substitute parts must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Compliance and Status: Active product status ensures ongoing availability and supply chain stability. RoHS3 compliance and REACH unaffected status are maintained across all listed substitutes.

Parameter Comparison

Parameter	STP20NF06	IRF1010EZPBF	IRFZ34NPBF	IRFZ24NPBF	PHP20N06T,127
Manufacturer	STMicroelectronics	Infineon Technologies	Infineon Technologies	Infineon Technologies	NXP Semiconductors
Vdss (V)	60	60	55	55	55
Id @ 25°C (A)	20	75	29	17	20.3
Rds On @ 10V (mOhm)	70 @ 10A	8.5 @ 51A	40 @ 16A	70 @ 10A	75 @ 10A
Vgs(th) @ Id (V)	4 @ 250µA	4 @ 100µA	4 @ 250µA	4 @ 250µA	4 @ 1mA
Gate Charge Qg @ 10V (nC)	18	86	34	20	11
Power Dissipation (W)	60	140	68	45	62
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Not specified

Engineering Selection Recommendations

IRF1010EZPBF (Infineon Technologies): This substitute provides the highest current rating (75A) and power dissipation capability (140W) among available options. It maintains the 60V voltage rating of the original part, ensuring full compatibility with voltage-constrained applications. Active product status and RoHS3 compliance support long-term supply chain stability. The significantly lower on-state resistance (8.5mOhm) reduces thermal dissipation in high-current applications. Higher gate charge (86nC) requires verification of gate driver circuit capability for switching frequency requirements.

IRFZ34NPBF (Infineon Technologies): This substitute offers 29A continuous current and 68W power dissipation with moderate on-state resistance (40mOhm). The 55V voltage rating is suitable for applications with maximum operating voltages below 55V. Active product status and RoHS3 compliance ensure availability. Gate charge (34nC) is moderate and compatible with standard gate driver circuits.

IRFZ24NPBF (Infineon Technologies): This substitute provides 17A continuous current and 45W power dissipation with on-state resistance matching the original part (70mOhm). The 55V voltage rating applies the same voltage constraint as IRFZ34NPBF. Active product status and RoHS3 compliance are maintained. Gate charge (20nC) is comparable to the original part, minimizing gate driver circuit modifications.

PHP20N06T,127 (NXP Semiconductors): This substitute matches the original part's current rating (20.3A) and provides equivalent power dissipation (62W). The 55V voltage rating applies the same constraint as other Infineon alternatives. Active product status supports ongoing procurement. Gate charge (11nC) is lower than the original part, enabling faster switching characteristics. RoHS3 compliance status is not specified in available documentation.

Frequently Asked Questions (FAQ)

Q: Can the IRF1010EZPBF replace the STP20NF06 in all applications?

A: The IRF1010EZPBF is electrically compatible for applications operating at or below 60V. The higher current rating (75A vs. 20A) and lower on-state resistance provide improved thermal performance. Gate driver circuits must accommodate the higher gate charge (86nC vs. 18nC) for switching frequencies above 100kHz. Thermal management design may require adjustment due to increased power dissipation capability.

Q: Why do some substitutes have 55V ratings instead of 60V?

A: The IRFZ34NPBF, IRFZ24NPBF, and PHP20N06T,127 are rated for 55V maximum drain-to-source voltage. These parts are suitable for applications with maximum operating voltages of 55V or lower. Applications requiring the full 60V rating must use the IRF1010EZPBF or equivalent 60V-rated alternatives.

Q: Are all substitute parts available in the same package?

A: All listed substitute parts use the TO-220-3 through-hole package, ensuring mechanical and thermal interface compatibility with the original STP20NF06. Pin configuration and lead spacing are identical across all parts.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge affects switching speed and gate driver power requirements. The IRF1010EZPBF (86nC) requires longer switching times compared to the original part (18nC). The PHP20N06T,127 (11nC) enables faster switching. Gate driver circuits rated for 10V gate voltage can accommodate all listed substitutes; however, switching frequency limitations may apply for high-speed applications.

Q: Which substitute offers the best thermal performance?

A: The IRF1010EZPBF provides the lowest on-state resistance (8.5mOhm) and highest power dissipation rating (140W), resulting in the lowest junction temperature rise at equivalent current levels. The IRFZ34NPBF (40mOhm) offers intermediate thermal performance. The IRFZ24NPBF and PHP20N06T,127 provide on-state resistance comparable to or slightly higher than the original part.

Q: Are all substitutes RoHS3 compliant?

A: The IRF1010EZPBF, IRFZ34NPBF, and IRFZ24NPBF are confirmed RoHS3 compliant. The PHP20N06T,127 RoHS3 compliance status is not specified in available documentation and should be verified with the manufacturer for applications requiring RoHS3 certification.

Q: Can the STP20NF06 be used interchangeably with these substitutes in existing PCB designs?

A: All substitute parts use identical TO-220-3 through-hole packaging with matching pin assignments, enabling direct mechanical replacement on existing PCBs. Electrical performance differences (current rating, on-state resistance, gate charge) may affect circuit behavior; design verification is necessary for applications sensitive to switching speed or thermal characteristics.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message