STP200NF03 N-Channel 30V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The STP200NF03 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 120A continuous drain current in a TO-220AB through-hole package. This device is part of the STripFET™ III series and carries a product status of "Not For New Designs," indicating it has been superseded in the manufacturer's portfolio. Applications requiring this component specification necessitate identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering current production status or improved performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	120	A
On-State Resistance (Rds On) @ 60A, 10V	3.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Input Capacitance (Ciss) @ 25V	4950	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP200NF03 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V (exact match required)
Package Type: TO-220-3 (mechanical compatibility)
Mounting Type: Through Hole (board assembly compatibility)
FET Type: N-Channel (functional requirement)
Technology: MOSFET Metal Oxide (device class)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 120A at 25°C (functional requirement for rated operation)
Operating Temperature Range: Minimum -55°C to 175°C (thermal envelope compatibility)
Gate Voltage (Vgs Max): ±20V (gate drive compatibility)

Performance Consideration Parameters:

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values indicate faster switching capability
Power Dissipation: Higher ratings provide thermal margin

Substitute parts listed below meet all primary matching criteria and secondary compatibility parameters. Variations in performance parameters reflect different design generations and manufacturing technologies while maintaining functional interchangeability within the specified electrical envelope.

Parameter Comparison

Parameter	STP200NF03	FDP8030L	IPP042N03LGXKSA1	IRF3703PBF	IRL7833PBF	IRLB8743PBF	PSMN1R1-30PL,127	PSMN2R0-30PL,127	PSMN3R4-30PL,127	PSMN4R3-30PL,127
Vdss (V)	30	30	30	30	30	30	30	30	30	30
Id @ 25°C (A)	120	80	70	210	150	78	120	100	100	100
Rds On (mOhm)	3.6 @ 60A, 10V	3.5 @ 80A, 10V	4.2 @ 30A, 10V	2.8 @ 76A, 10V	3.8 @ 38A, 10V	3.2 @ 40A, 10V	1.3 @ 25A, 10V	2.1 @ 15A, 10V	3.4 @ 10A, 10V	4.3 @ 15A, 10V
Vgs(th) (V)	4 @ 250µA	2 @ 250µA	2.2 @ 250µA	4 @ 250µA	2.3 @ 250µA	2.35 @ 100µA	2.2 @ 1mA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA
Qg (nC)	140 @ 10V	170 @ 5V	38 @ 10V	209 @ 10V	47 @ 4.5V	54 @ 4.5V	243 @ 10V	117 @ 10V	64 @ 10V	41.5 @ 10V
Ciss (pF)	4950 @ 25V	10500 @ 15V	3900 @ 15V	8250 @ 25V	4170 @ 15V	5110 @ 15V	14850 @ 15V	6810 @ 12V	3907 @ 12V	2400 @ 12V
Pd (W)	300	187	79	230	140	140	338	211	114	103
Tj Range (°C)	-55 to 175	-65 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Not For New Designs	Active	Not For New Designs	Active	Not For New Designs	Active	Obsolete	Obsolete	Obsolete	Obsolete
RoHS3 Compliant	Yes	—	Yes	—	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Active Production Status Alternatives:

The IRF3703PBF (International Rectifier HEXFET® series) and IRLB8743PBF (Infineon HEXFET® series) are the only substitute parts with Active product status. Both devices maintain the 30V Vdss specification and TO-220-3 package requirement. The IRF3703PBF provides the highest continuous drain current rating at 210A, exceeding the STP200NF03 specification by 75%. The IRLB8743PBF provides 78A continuous drain current with improved on-state resistance of 3.2 mOhm compared to the STP200NF03 at 3.6 mOhm.

Not For New Designs Status:

The IPP042N03LGXKSA1 (Infineon OptiMOS™ series) carries "Not For New Designs" status identical to the STP200NF03. This device offers superior gate charge characteristics (38 nC versus 140 nC) and lower input capacitance (3900 pF versus 4950 pF), indicating faster switching performance. However, the continuous drain current rating of 70A falls below the STP200NF03 specification.

Obsolete Status Alternatives:

The PSMN series devices (PSMN1R1-30PL,127, PSMN2R0-30PL,127, PSMN3R4-30PL,127, PSMN4R3-30PL,127) from Nexperia USA Inc. all carry Obsolete product status. The PSMN1R1-30PL,127 matches the STP200NF03 continuous drain current specification at 120A and provides superior on-state resistance of 1.3 mOhm. These devices are not recommended for new design implementations due to obsolescence.

Compliance Considerations:

All substitute parts listed maintain RoHS3 compliance and REACH Unaffected status where specified. The FDP8030L from Fairchild Semiconductor does not provide explicit RoHS3 or REACH documentation in the supplied parameters.

Frequently Asked Questions (FAQ)

Q: Can the FDP8030L replace the STP200NF03 in all applications?

A: The FDP8030L maintains the 30V Vdss specification and TO-220-3 package compatibility. However, the continuous drain current rating of 80A is 25% lower than the STP200NF03 specification of 120A. Substitution is valid only for applications where the actual operating current does not exceed 80A.

Q: What is the primary difference between the IRF3703PBF and IRLB8743PBF?

A: Both devices are Active production alternatives with 30V Vdss and TO-220-3 packaging. The IRF3703PBF provides 210A continuous drain current with 2.8 mOhm on-state resistance, while the IRLB8743PBF provides 78A continuous drain current with 3.2 mOhm on-state resistance. Selection depends on the required current capacity and thermal dissipation characteristics of the application.

Q: Why are the PSMN series devices listed as Obsolete?

A: The PSMN series devices from Nexperia USA Inc. have reached end-of-life status and are no longer in active production. While electrical specifications may be compatible, these parts are not recommended for new design implementations due to limited future availability and potential supply discontinuation.

Q: Is the IPP042N03LGXKSA1 suitable as a direct replacement?

A: The IPP042N03LGXKSA1 maintains 30V Vdss and TO-220-3 package compatibility. However, the continuous drain current rating of 70A is 42% lower than the STP200NF03 specification of 120A. This device is suitable only for applications where the actual operating current does not exceed 70A. The device offers superior switching performance characteristics with lower gate charge and input capacitance.

Q: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates that the manufacturer has superseded the device in their product portfolio but continues to support existing inventory. New design implementations should prioritize Active status alternatives. However, existing designs using these devices may continue to source from remaining inventory.

Q: Are all substitute parts mechanically compatible with the STP200NF03?

A: All listed substitute parts use the TO-220-3 package with through-hole mounting, providing mechanical compatibility with the STP200NF03. Pin configuration and lead spacing are identical, allowing direct board-level substitution without PCB modifications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STP200NF03 requires 140 nC at 10V. Lower gate charge values (such as IPP042N03LGXKSA1 at 38 nC) reduce switching losses and allow faster switching frequencies. Higher gate charge values (such as PSMN1R1-30PL,127 at 243 nC) increase switching losses but may provide improved noise immunity in certain applications.

Q: What is the significance of on-state resistance (Rds On) variation?

A: On-state resistance directly affects conduction losses and thermal dissipation. The STP200NF03 specifies 3.6 mOhm at 60A and 10V. Lower values (such as IRF3703PBF at 2.8 mOhm) reduce power dissipation and heat generation. Higher values (such as PSMN4R3-30PL,127 at 4.3 mOhm) increase conduction losses. Selection depends on the application's thermal budget and efficiency requirements.

Q: Can I use a substitute part with higher continuous drain current rating?

A: Yes. Substitute parts with higher continuous drain current ratings (such as IRF3703PBF at 210A) provide additional thermal margin and can be used in applications designed for the STP200NF03 at 120A. The higher rating does not create compatibility issues; it provides additional design flexibility and potential for improved reliability through reduced thermal stress.

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