STP13NK50Z N-Channel 500V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The STP13NK50Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 11A continuous drain current at 25°C. This device features the SuperMESH™ series technology and is housed in a TO-220-3 through-hole package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	11	A
On-Resistance (Rds On Max) @ 6.5A, 10V	480	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 100µA	4.5	V
Gate Charge (Qg Max) @ 10V	47	nC
Power Dissipation (Max)	140	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the STP13NK50Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 11A
On-Resistance (Rds On): Must not exceed 480mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Package Type: TO-220-3 through-hole configuration required for direct mechanical compatibility
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching characteristics
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Higher ratings provide thermal margin
RoHS and REACH Compliance: Required for regulatory alignment

Substitute parts are grouped into three categories based on current rating and thermal performance relative to the STP13NK50Z baseline specifications.

Parameter Comparison

Parameter	STP13NK50Z	STP12NM50	IRF830A	IRF830APBF	IRF830PBF	IRFB11N50APBF	IXFP12N50P	IXTP15N50L2
Manufacturer	STMicroelectronics	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	IXYS	IXYS
Vdss (V)	500	500	500	500	500	500	500	500
Id @ 25°C (A)	11	12	5	5	4.5	11	12	15
Rds On Max (mOhm)	480	350	1400	1400	1500	520	500	480
Vgs(th) Max (V)	4.5	5	4.5	4.5	4	4	5.5	4.5
Qg Max (nC)	47	39	24	24	38	52	29	123
Power Dissipation Max (W)	140	160	74	74	74	170	200	300
Operating Temperature (°C)	-55 to 150	-65 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: STP12NM50

The STP12NM50 is the preferred direct substitute for the STP13NK50Z. Both devices are manufactured by STMicroelectronics and share identical voltage ratings (500V Vdss). The STP12NM50 exceeds the current requirement with 12A continuous drain current versus 11A, and delivers superior on-resistance performance (350mOhm versus 480mOhm). The device is active in production, ROHS3 compliant, and housed in the identical TO-220-3 package. Lower gate charge (39nC versus 47nC) provides improved switching characteristics. Operating temperature range extends to -65°C, exceeding the original specification.

Secondary Recommendation: IRFB11N50APBF

The IRFB11N50APBF from Vishay Siliconix matches the STP13NK50Z current rating at 11A and maintains 500V voltage rating. This device is active in production with ROHS3 compliance and REACH unaffected status. On-resistance is 520mOhm, marginally higher than the original 480mOhm specification. Power dissipation rating of 170W exceeds the original 140W. The TO-220-3 package provides direct mechanical compatibility. This option is suitable for applications where manufacturer diversity is required.

Tertiary Recommendation: IXFP12N50P

The IXFP12N50P from IXYS provides 12A current capacity and 500V voltage rating in TO-220-3 packaging. On-resistance of 500mOhm is comparable to the original specification. Power dissipation of 200W provides thermal margin. This device is active in production with ROHS3 compliance and REACH unaffected status. Lower gate charge (29nC) improves switching performance. Selection of this part introduces manufacturer diversity from IXYS.

Higher Current Alternative: IXTP15N50L2

The IXTP15N50L2 provides 15A continuous drain current with 500V rating and 480mOhm on-resistance matching the original specification. Power dissipation of 300W provides substantial thermal margin. This device is active in production with ROHS3 compliance. The higher current capacity accommodates applications requiring increased current headroom. Gate charge of 123nC is significantly higher, affecting switching speed characteristics.

Not Recommended: IRF830 Series (IRF830A, IRF830APBF, IRF830PBF)

The IRF830 series devices are not suitable substitutes. These parts are rated for only 4.5A to 5A continuous drain current, substantially below the 11A requirement of the STP13NK50Z. On-resistance values of 1.4Ohm to 1.5Ohm are significantly higher than the 480mOhm specification. IRF830A is RoHS non-compliant. While these devices share the 500V voltage rating and TO-220-3 package, the current and on-resistance deficiencies preclude their use as direct substitutes.

Frequently Asked Questions (FAQ)

Q: Can the STP12NM50 directly replace the STP13NK50Z without circuit modifications?

A: Yes. The STP12NM50 meets or exceeds all critical electrical parameters of the STP13NK50Z. The 12A current rating exceeds the 11A requirement, and the 350mOhm on-resistance is superior to the original 480mOhm specification. Both devices use identical TO-220-3 packaging and share the same gate drive voltage (10V). No circuit modifications are required.

Q: Why are the IRF830 series devices listed as unsuitable?

A: The IRF830 series devices (IRF830A, IRF830APBF, IRF830PBF) are rated for only 4.5A to 5A continuous drain current, which is insufficient for applications requiring the 11A capacity of the STP13NK50Z. Additionally, on-resistance values of 1.4Ohm to 1.5Ohm are approximately three times higher than the 480mOhm specification, resulting in excessive power dissipation and thermal stress. These devices are not electrically compatible substitutes.

Q: What is the significance of the gate charge (Qg) parameter in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values enable faster switching transitions and reduce gate drive power requirements. The STP13NK50Z specifies 47nC gate charge. The STP12NM50 (39nC) and IXFP12N50P (29nC) provide faster switching characteristics, while the IXTP15N50L2 (123nC) requires more gate drive energy. Selection depends on circuit switching frequency and gate driver capabilities.

Q: Are all recommended substitutes RoHS3 compliant?

A: All recommended primary and secondary substitutes (STP12NM50, IRFB11N50APBF, IXFP12N50P, IXTP15N50L2) are ROHS3 compliant. The IRF830 series devices are not recommended; IRF830A is RoHS non-compliant, while IRF830APBF and IRF830PBF are ROHS3 compliant but fail on current and on-resistance criteria.

Q: Can the IXTP15N50L2 be used in applications designed for the STP13NK50Z?

A: Yes, with consideration of gate charge characteristics. The IXTP15N50L2 provides 15A current capacity and 480mOhm on-resistance, matching the original specification. However, gate charge of 123nC is significantly higher than the original 47nC, requiring verification that the gate driver can supply the additional charge without exceeding maximum gate voltage limits (±20V for IXTP15N50L2 versus ±30V for STP13NK50Z). The higher current capacity provides design margin for applications with variable load conditions.

Q: What is the impact of on-resistance (Rds On) on circuit performance?

A: On-resistance directly determines conduction losses and heat dissipation. Lower on-resistance reduces power loss and thermal stress. The STP13NK50Z specifies 480mOhm maximum on-resistance. The STP12NM50 (350mOhm) and IXTP15N50L2 (480mOhm) provide equal or superior performance. The IRFB11N50APBF (520mOhm) and IXFP12N50P (500mOhm) are marginally higher but remain acceptable for most applications. The IRF830 series (1.4Ohm to 1.5Ohm) would generate excessive heat and are unsuitable.

Q: Does manufacturer selection affect reliability or availability?

A: All recommended substitutes are from established semiconductor manufacturers (STMicroelectronics, Vishay Siliconix, IXYS) with established supply chains. The STP12NM50 maintains manufacturer continuity with the original STMicroelectronics design. IRFB11N50APBF and IXFP12N50P introduce manufacturer diversity, which may be beneficial for supply chain resilience. Inventory levels vary; consult current distributor stock for availability.

Q: What is the difference between the IRF830APBF and IRF830PBF variants?

A: Both devices are rated for 4.5A to 5A continuous drain current and are unsuitable as substitutes for the STP13NK50Z due to insufficient current capacity. IRF830APBF is ROHS3 compliant with REACH affected status, while IRF830PBF is ROHS3 compliant with REACH affected status. The packaging differs (IRF830APBF in tube, IRF830PBF in tube), but both use TO-220-3 configuration. Neither device meets the 11A current requirement.

Q: Can the STP12NM50 be used in high-temperature applications?

A: Yes. The STP12NM50 operating temperature range extends from -65°C to 150°C, which exceeds the STP13NK50Z specification of -55°C to 150°C. This provides additional margin for high-temperature environments. All recommended substitutes maintain the -55°C to 150°C minimum operating range, with STP12NM50 offering extended low-temperature capability.

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