STP10P6F6 Equivalent & Substitute Parts

Part Overview

The STP10P6F6 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 10A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the DeepGATE™ and STripFET™ VI series. This part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The STP10P6F6 is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substiute Parts

STP10P6F6

STMicroelectronicsIn Stock: 15250STP10P6F6 Datasheet

Current PartRFQ

IRF9Z34PBF

Vishay SiliconixIn Stock: 5343IRF9Z34PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP10P6F6 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 60V minimum rating
• Package / Case: TO-220-3 form factor for through-hole mounting
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA maximum
• Gate-Source Voltage (Vgs): ±20V maximum rating

Performance Parameters (Allowable Variation):

• Continuous Drain Current (Id): Equal to or greater than 10A
• On-State Resistance (Rds On): Equal to or lower than 160 mOhm at specified conditions
• Power Dissipation: Equal to or greater than 30W

The IRF9Z34PBF meets all critical matching parameters and exceeds performance specifications, making it a direct functional substitute for the obsolete STP10P6F6.

Parameter Comparison

Engineering Selection Recommendations

The IRF9Z34PBF is a direct functional substitute for the obsolete STP10P6F6. Both devices are ROHS3 compliant and share identical electrical specifications for critical parameters including Vdss, Vgs(th), and Vgs ratings. The IRF9Z34PBF maintains active product status with Vishay Siliconix, ensuring long-term availability and supply chain continuity.

The IRF9Z34PBF provides superior performance margins across all measurable parameters: 80% higher continuous drain current (18A vs. 10A), lower on-state resistance (140 mOhm vs. 160 mOhm), and nearly three times greater power dissipation capability (88W vs. 30W). These enhancements provide design headroom without requiring circuit modifications.

Both devices utilize identical TO-220-3 through-hole packaging, enabling direct mechanical and electrical substitution without PCB redesign. The IRF9Z34PBF's extended operating temperature range (-55°C to 175°C) provides additional environmental flexibility compared to the STP10P6F6's 175°C maximum junction temperature.

Frequently Asked Questions (FAQ)

Q: Can the IRF9Z34PBF replace the STP10P6F6 in existing designs without modification?

A: Yes. The IRF9Z34PBF is electrically and mechanically compatible with the STP10P6F6. Both devices share identical TO-220-3 package geometry, gate threshold voltage specifications, and maximum gate-source voltage ratings. No circuit modifications are required.

Q: What are the key electrical differences between these two parts?

A: The IRF9Z34PBF exceeds the STP10P6F6 in three performance areas: continuous drain current (18A vs. 10A), on-state resistance (140 mOhm vs. 160 mOhm at specified conditions), and power dissipation capability (88W vs. 30W). These differences represent performance improvements that do not affect compatibility.

Q: Are both parts RoHS compliant?

A: Yes. Both the STP10P6F6 and IRF9Z34PBF are ROHS3 compliant. The STP10P6F6 is REACH unaffected, while the IRF9Z34PBF is REACH affected. Both carry unlimited moisture sensitivity level (MSL 1).

Q: What is the significance of the STP10P6F6 being classified as obsolete?

A: Obsolete status indicates that STMicroelectronics has discontinued production and support for this device. The IRF9Z34PBF, classified as active, ensures ongoing manufacturer support, technical documentation updates, and supply availability.

Q: Are the thermal characteristics of these devices equivalent?

A: The IRF9Z34PBF provides superior thermal performance with 88W maximum power dissipation compared to the STP10P6F6's 30W rating. Both devices operate to a maximum junction temperature of 175°C. The IRF9Z34PBF's extended temperature range (-55°C to 175°C) provides additional operational flexibility.

Q: Do these devices require different gate drive circuits?

A: No. Both devices share identical gate threshold voltage (Vgs(th)) and maximum gate-source voltage (Vgs) specifications. Existing gate drive circuits designed for the STP10P6F6 are directly compatible with the IRF9Z34PBF.