STP10NK80Z Equivalent & Substitute Parts

Part Overview

The STP10NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 9A continuous drain current at 25°C. This device operates in the SuperMESH™ series and is housed in a TO-220-3 through-hole package. The part is currently Active in product status with 8058 units in stock inventory.

Equivalent and substitute parts are identified based on matching or compatible electrical and mechanical parameters within the N-Channel MOSFET category. Substitutes are selected when they share the same package type, voltage rating, current handling capability, and thermal characteristics, allowing direct replacement in circuit applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	9	A (Tc)
Rds On (Max) @ Id, Vgs	900 mOhm @ 4.5A, 10V	Ohm
Power Dissipation (Max)	190	W (Tc)
Gate Charge (Qg) (Max) @ Vgs	72	nC @ 10V
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-220-3	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution logic for the STP10NK80Z is based on the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 800V minimum
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Through Hole

Secondary Compatibility Criteria:

Current - Continuous Drain (Id) @ 25°C: 9A or greater
Power Dissipation (Max): 190W or greater
Gate Charge (Qg): Comparable to 72 nC @ 10V
Rds On (Max): Compatible with 900 mOhm @ 10V

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (800V Rating, 9A+ Current): Parts that match or exceed the voltage, current, and power dissipation specifications of the STP10NK80Z, enabling direct replacement without circuit modification.

Category B - Functional Alternatives (800V Rating, Lower Current): Parts that maintain the 800V voltage rating but operate at reduced continuous drain current (4A to 8A). These are suitable for applications where the full 9A capability is not required, provided thermal and current requirements are verified against circuit specifications.

Category C - Voltage-Reduced Alternatives (600V Rating): Parts rated for 600V operation. These are not direct substitutes for 800V applications but are listed for reference in lower-voltage circuit designs.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Power Dissipation (W)	Qg (nC)	Package	Status
STP10NK80Z	STMicroelectronics	800	9	900 @ 4.5A, 10V	190	72 @ 10V	TO-220-3	Active
IXFP10N80P	IXYS	800	10	1100 @ 5A, 10V	300	40 @ 10V	TO-220-3	Active
SPP08N80C3XKSA1	Infineon Technologies	800	8	650 @ 5.1A, 10V	104	60 @ 10V	TO-220-3	Active
SPP06N80C3XKSA1	Infineon Technologies	800	6	900 @ 3.8A, 10V	83	41 @ 10V	TO-220-3	Active
SPP04N80C3XKSA1	Infineon Technologies	800	4	1300 @ 2.5A, 10V	63	31 @ 10V	TO-220-3	Active
IPP80R900P7XKSA1	Infineon Technologies	800	6	900 @ 2.2A, 10V	45	15 @ 10V	TO-220-3	Active
SPP04N60C3XKSA1	Infineon Technologies	600	4.5	950 @ 2.8A, 10V	50	25 @ 10V	TO-220-3	Obsolete
FCP4N60	Fairchild Semiconductor	600	3.9	1200 @ 2A, 10V	50	16.6 @ 10V	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement (800V, 9A+ Applications):

The IXFP10N80P from IXYS is the primary direct equivalent. It exceeds the STP10NK80Z in both continuous drain current (10A vs. 9A) and power dissipation (300W vs. 190W), providing enhanced thermal margin. Both parts are Active in product status, RoHS3 compliant, and housed in TO-220-3 packages. The IXFP10N80P operates within the same temperature range (-55°C to 150°C) and maintains compatible gate charge characteristics.

For Current-Reduced 800V Applications (4A to 8A):

The SPP08N80C3XKSA1, SPP06N80C3XKSA1, and SPP04N80C3XKSA1 from Infineon Technologies maintain the 800V voltage rating while offering reduced current ratings. All three are Active products, RoHS3 compliant, and packaged in TO-220-3 format. The SPP08N80C3XKSA1 provides the closest current match at 8A, with lower on-resistance (650 mOhm) compared to the STP10NK80Z. Selection among these three depends on circuit current requirements and thermal design constraints.

For Lower-Voltage Applications (600V):

The SPP04N60C3XKSA1 and FCP4N60 are suitable only for applications rated at 600V or below. The SPP04N60C3XKSA1 is marked Obsolete and should be avoided for new designs. The FCP4N60 from Fairchild Semiconductor is Active and provides 3.9A continuous drain current in a TO-220-3 package. These parts are not suitable for 800V circuit applications.

Compliance and Certification:

All Active substitute parts listed are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can the IXFP10N80P directly replace the STP10NK80Z in an 800V application?

A: Yes. The IXFP10N80P is rated for 800V drain-to-source voltage, provides 10A continuous drain current (exceeding the 9A requirement), and is packaged in TO-220-3. Both parts operate across the same temperature range (-55°C to 150°C). The IXFP10N80P offers higher power dissipation capability (300W vs. 190W), providing additional thermal margin.

Q: Why are the SPP series parts (SPP08N80C3XKSA1, SPP06N80C3XKSA1, SPP04N80C3XKSA1) listed as substitutes if they have lower current ratings?

A: These parts maintain the critical 800V voltage rating and TO-220-3 package compatibility. They are suitable substitutes for applications where the circuit current requirement is 8A or below. The SPP08N80C3XKSA1 at 8A approaches the STP10NK80Z specification and may be used in designs with slightly reduced current margins. Selection depends on the actual circuit current demand, not the maximum device rating.

Q: Is the SPP04N60C3XKSA1 a viable substitute for the STP10NK80Z?

A: No. The SPP04N60C3XKSA1 is rated for 600V maximum drain-to-source voltage, which is insufficient for 800V circuit applications. Additionally, this part is marked Obsolete and should not be selected for new designs. It is listed for reference only in lower-voltage applications.

Q: What is the significance of the Rds On (on-resistance) parameter when selecting a substitute?

A: On-resistance directly affects power dissipation and heat generation in the MOSFET. The STP10NK80Z specifies 900 mOhm @ 4.5A, 10V. Substitute parts with lower on-resistance (such as SPP08N80C3XKSA1 at 650 mOhm) generate less heat at the same current, improving thermal performance. Higher on-resistance increases power loss and requires enhanced thermal management. On-resistance values must be evaluated against circuit current levels and thermal design constraints.

Q: Are all substitute parts available in the same packaging format?

A: Yes. All substitute parts listed are housed in TO-220-3 through-hole packages, matching the STP10NK80Z mechanical footprint. This ensures compatibility with existing printed circuit board layouts and mounting hardware. No PCB redesign is required for mechanical substitution.

Q: What does the Gate Charge (Qg) parameter indicate, and why does it vary among substitutes?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state at a specified gate-source voltage (10V in this case). Lower gate charge enables faster switching and reduces driver power requirements. The STP10NK80Z specifies 72 nC @ 10V. Substitutes such as the IPP80R900P7XKSA1 (15 nC) have significantly lower gate charge, resulting in faster switching characteristics. Higher gate charge (such as IXFP10N80P at 40 nC) requires more driver current but may offer other performance advantages. Gate charge selection depends on circuit switching frequency and driver capabilities.

Q: Can I use a 600V-rated part in an 800V circuit?

A: No. Using a 600V-rated MOSFET in an 800V circuit exceeds the device's maximum voltage rating and will result in device failure or destruction. The drain-to-source voltage rating must equal or exceed the circuit operating voltage. The FCP4N60 and SPP04N60C3XKSA1 are suitable only for circuits rated at 600V or below.

Q: What is the difference between the STP10NK80Z and the IPP80R900P7XKSA1 in terms of application suitability?

A: Both parts are rated for 800V operation and packaged in TO-220-3. The primary differences are continuous drain current (9A vs. 6A) and power dissipation (190W vs. 45W). The STP10NK80Z is suitable for higher-current applications requiring greater thermal capacity. The IPP80R900P7XKSA1 is appropriate for lower-current designs where reduced power dissipation is acceptable. The IPP80R900P7XKSA1 features significantly lower gate charge (15 nC vs. 72 nC), enabling faster switching in high-frequency applications.

Q: Are there any product status considerations when selecting a substitute?

A: Yes. All recommended substitutes are marked Active in product status, indicating current manufacturing and availability. The SPP04N60C3XKSA1 is marked Obsolete and should be avoided for new designs, as it may face supply discontinuation and reduced manufacturer support. Active parts ensure long-term availability and design continuity.

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