STN888 Equivalent & Substitute Parts

Part Overview

The STN888 is a PNP bipolar junction transistor manufactured by STMicroelectronics, designed for surface mount applications in the SOT-223 package. This component is rated for 30 V collector-emitter breakdown voltage with a maximum collector current of 5 A and maximum power dissipation of 1.6 W. The STN888 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Active alternatives with comparable electrical characteristics are available from multiple manufacturers including Diodes Incorporated and Nexperia USA Inc.

Substiute Parts

STN888
STMicroelectronicsIn Stock: 12795STN888 Datasheet
STN888
Current Part
DMJT9435-13
Diodes IncorporatedIn Stock: 15634DMJT9435-13 Datasheet
DMJT9435-13
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FZT1147ATA
Diodes IncorporatedIn Stock: 15632FZT1147ATA Datasheet
FZT1147ATA
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FZT549TA
Diodes IncorporatedIn Stock: 16805FZT549TA Datasheet
FZT549TA
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FZT589TA
Diodes IncorporatedIn Stock: 66266FZT589TA Datasheet
FZT589TA
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FZT949TA
Diodes IncorporatedIn Stock: 37495FZT949TA Datasheet
FZT949TA
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PBSS303PZ,135
Nexperia USA Inc.In Stock: 4502PBSS303PZ,135 Datasheet
PBSS303PZ,135
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ZX5T949GTA
Diodes IncorporatedIn Stock: 24137ZX5T949GTA Datasheet
ZX5T949GTA
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ZXTP2008GTA
Diodes IncorporatedIn Stock: 7509ZXTP2008GTA Datasheet
ZXTP2008GTA
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Key Parameters

Parameter STN888 Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 5 A
Power - Max 1.6 W
Vce Saturation (Max) @ Ib, Ic 1.2V @ 500mA, 10A V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 1V
Current - Collector Cutoff (Max) 10 µA
Operating Temperature (Max) 150 °C
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the STN888 is determined by strict alignment of electrical and mechanical parameters within the PNP bipolar junction transistor category. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor Type: PNP (mandatory match)
  • Voltage - Collector Emitter Breakdown: 30 V minimum (STN888 rated at 30 V)
  • Current - Collector (Ic) (Max): 5 A or greater (STN888 rated at 5 A)
  • Package / Case: TO-261-4 or TO-261AA (SOT-223 family)
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

Substitution Groups:

Group 1: Direct Electrical Equivalents (30 V, 5 A or greater) Parts meeting or exceeding the STN888 electrical specifications for voltage and current capacity while maintaining SOT-223 packaging:

  • FZT949TA (5.5 A, 30 V, 3 W)
  • PBSS303PZ,135 (5.3 A, 30 V, 2 W)
  • ZX5T949GTA (5.5 A, 30 V, 3 W)
  • ZXTP2008GTA (5.5 A, 30 V, 3 W)

Group 2: Reduced Current Capacity (30 V, less than 5 A) Parts maintaining 30 V voltage rating but with reduced current capacity:

  • FZT549TA (1 A, 30 V, 2 W)
  • FZT589TA (1 A, 30 V, 2 W)

Group 3: Reduced Voltage Rating (12 V, 5 A) Parts maintaining 5 A current capacity but with reduced voltage rating:

  • FZT1147ATA (5 A, 12 V, 2.5 W)

Group 4: Reduced Specifications (30 V, 3 A) Parts with reduced current capacity and voltage rating:

  • DMJT9435-13 (3 A, 30 V, 1.2 W)

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce Breakdown (Max) [V] Power (Max) [W] Vce Sat (Max) [mV] hFE (Min) Package Status
STN888 STMicroelectronics 5 30 1.6 1200 100 SOT-223 Obsolete
FZT949TA Diodes Incorporated 5.5 30 3 440 100 SOT-223-3 Active
PBSS303PZ,135 Nexperia USA Inc. 5.3 30 2 265 250 SOT-223 Active
ZX5T949GTA Diodes Incorporated 5.5 30 3 210 100 SOT-223-3 Active
ZXTP2008GTA Diodes Incorporated 5.5 30 3 210 100 SOT-223-3 Active
FZT549TA Diodes Incorporated 1 30 2 750 100 SOT-223-3 Active
FZT589TA Diodes Incorporated 1 30 2 650 100 SOT-223-3 Active
FZT1147ATA Diodes Incorporated 5 12 2.5 400 270 SOT-223-3 Active
DMJT9435-13 Diodes Incorporated 3 30 1.2 550 125 SOT-223-3 Active

Engineering Selection Recommendations

Primary Substitutes (Full Electrical Equivalence):

The following parts are recommended as primary substitutes for the STN888 based on matching or exceeding all critical electrical parameters while maintaining active product status and full compliance certifications:

  • FZT949TA: Exceeds STN888 specifications with 5.5 A collector current, 30 V breakdown voltage, and 3 W power rating. Provides improved saturation voltage (440 mV vs. 1200 mV). Active product status with ROHS3 compliance and unlimited MSL rating.

  • PBSS303PZ,135: Meets STN888 specifications with 5.3 A collector current and 30 V breakdown voltage. Offers superior saturation voltage (265 mV) and higher DC current gain (250 vs. 100). Includes AEC-Q100 automotive qualification. Active product status with ROHS3 compliance.

  • ZX5T949GTA: Exceeds STN888 specifications with 5.5 A collector current, 30 V breakdown voltage, and 3 W power rating. Provides improved saturation voltage (210 mV) and lower collector cutoff current (20 nA vs. 10 µA). Active product status with ROHS3 compliance.

  • ZXTP2008GTA: Exceeds STN888 specifications with 5.5 A collector current, 30 V breakdown voltage, and 3 W power rating. Provides improved saturation voltage (210 mV) and lower collector cutoff current (20 nA). Active product status with ROHS3 compliance.

Secondary Substitutes (Reduced Current Capacity):

  • DMJT9435-13: Suitable for applications where collector current requirements do not exceed 3 A. Maintains 30 V breakdown voltage. Active product status with ROHS3 compliance.

Application-Specific Substitutes (Reduced Voltage Rating):

  • FZT1147ATA: Applicable only to circuits with maximum 12 V collector-emitter voltage requirements. Maintains 5 A collector current capacity. Active product status with ROHS3 compliance.

Limited Substitutes (Reduced Current Capacity, 30 V Rating):

  • FZT549TA and FZT589TA: Suitable only for applications requiring maximum 1 A collector current with 30 V breakdown voltage. Active product status with ROHS3 compliance.

All recommended substitutes maintain SOT-223 package compatibility, surface mount mounting type, ROHS3 compliance, and unlimited moisture sensitivity level (MSL 1).

Frequently Asked Questions (FAQ)

Q: Can FZT949TA directly replace STN888 in all applications?

A: FZT949TA meets or exceeds all critical electrical parameters of the STN888 (5.5 A vs. 5 A, 30 V vs. 30 V, 3 W vs. 1.6 W). Both use SOT-223 package with identical pinout (TO-261-4, TO-261AA). Direct substitution is supported for applications operating within STN888 specifications. FZT949TA provides improved performance characteristics including lower saturation voltage.

Q: What is the difference between SOT-223 and SOT-223-3 packages?

A: Both SOT-223 and SOT-223-3 refer to the same physical package family (TO-261-4, TO-261AA) used for surface mount transistors. The designation variation reflects different manufacturer nomenclature for the identical package. Pin configuration and footprint compatibility are maintained across all substitute parts listed.

Q: Why does PBSS303PZ,135 have a higher DC current gain (250) than STN888 (100)?

A: DC current gain (hFE) is a transistor characteristic that varies with collector current and collector-emitter voltage operating points. PBSS303PZ,135 is specified at 1 A and 2 V, while STN888 is specified at 500 mA and 1 V. Higher hFE values indicate more efficient base current utilization. Both parts are functionally compatible for applications designed for the STN888.

Q: Can FZT1147ATA replace STN888?

A: FZT1147ATA is not a direct replacement. While it maintains 5 A collector current capacity, it is rated for only 12 V collector-emitter breakdown voltage compared to STN888's 30 V rating. FZT1147ATA is suitable only for circuits with maximum 12 V supply voltages. Use in 30 V circuits will result in device failure.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are ROHS3 compliant and maintain unlimited moisture sensitivity level (MSL 1), matching the STN888 compliance profile. All parts are suitable for lead-free soldering processes.

Q: What is the significance of saturation voltage differences between STN888 and substitute parts?

A: Saturation voltage (Vce Sat) represents the minimum voltage drop across the transistor when fully conducting. Lower saturation voltages (such as 210 mV in ZX5T949GTA vs. 1200 mV in STN888) result in reduced power dissipation and improved efficiency. Substitute parts with lower saturation voltages provide performance advantages in switching applications.

Q: Which substitute part offers the best overall performance match to STN888?

A: FZT949TA, ZX5T949GTA, and ZXTP2008GTA all exceed STN888 specifications with 5.5 A current capacity, 30 V breakdown voltage, and improved saturation voltage characteristics. Selection between these three depends on packaging preference (Tape & Reel vs. Cut Tape) and specific application requirements. All three are active products with full compliance certifications.

Q: Can reduced current capacity substitutes be used in STN888 applications?

A: Substitutes with reduced current capacity (such as DMJT9435-13 at 3 A or FZT549TA at 1 A) can only be used in applications where the actual collector current requirement does not exceed the substitute part's rating. Circuit redesign or current limiting may be required. Exceeding the rated collector current will result in device damage.

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