STF12NK80Z N-Channel 800V 10.5A MOSFET Equivalent & Substitute Parts

Part Overview

The STF12NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 10.5A continuous drain current at 25°C. This device operates in the SuperMESH™ series and is housed in a TO-220FP through-hole package. The part is Active status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances, maintaining compatibility with existing circuit designs while accommodating component availability or supply chain requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	10.5	A
Rds On (Max) @ Id, Vgs	750	mOhm @ 5.25A, 10V
Gate Charge (Qg) (Max) @ Vgs	87	nC @ 10V
Power Dissipation (Max)	40	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the STF12NK80Z is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 800V minimum
N-Channel FET topology
Through-hole mounting configuration
RoHS3 compliance
Operating temperature range compatibility

Secondary Compatibility Factors:

Continuous drain current (Id) at rated conditions
On-state resistance (Rds On) at specified gate voltage
Gate charge characteristics
Power dissipation capability
Package footprint compatibility (TO-220 family variants)

The identified substitute parts operate at reduced voltage ratings (600V) or reduced current ratings (8A), representing trade-offs in performance envelope. These substitutes maintain N-Channel topology and through-hole mounting but operate within different electrical specifications.

Parameter Comparison

Parameter	STF12NK80Z (Main)	IPA80R650CEXKSA2	TK6A60W,S4VX	TK9A60D(STA4,Q,M)
Manufacturer	STMicroelectronics	Infineon Technologies	Toshiba Semiconductor	Toshiba Semiconductor
Vdss (V)	800	800	600	600
Id @ 25°C (A)	10.5	8	6.2	9
Rds On (Max) (mOhm)	750 @ 5.25A, 10V	650 @ 5.1A, 10V	750 @ 3.1A, 10V	830 @ 4.5A, 10V
Gate Charge Qg (nC)	87 @ 10V	45 @ 10V	12 @ 10V	24 @ 10V
Power Dissipation (W)	40	33	30	45
Operating Temperature (°C)	-55 to 150	-40 to 150	to 150	to 150
Package	TO-220FP	TO-220-3F	TO-220SIS	TO-220SIS
Series	SuperMESH™	CoolMOS™	DTMOSIV	π-MOSVII
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPA80R650CEXKSA2 (Infineon Technologies)

This substitute maintains the 800V Vdss rating of the main part, providing direct voltage compatibility. The 8A continuous drain current represents a 23.8% reduction from the STF12NK80Z specification. On-state resistance is improved at 650mOhm versus 750mOhm. Gate charge is significantly lower at 45nC, reducing driver requirements. Power dissipation is reduced to 33W. The part is RoHS3 compliant with unlimited moisture sensitivity. Operating temperature minimum is -40°C versus -55°C for the main part. TO-220-3F package maintains through-hole compatibility with standard PCB layouts.

TK6A60W,S4VX (Toshiba Semiconductor and Storage)

This substitute operates at 600V Vdss, representing a 25% voltage derating from the main part specification. Continuous drain current is 6.2A, a 40.9% reduction. On-state resistance matches the main part at 750mOhm. Gate charge is significantly reduced to 12nC. Power dissipation is 30W. The part is RoHS3 compliant. Operating temperature maximum is 150°C. TO-220SIS package provides through-hole mounting. This substitute is suitable only for applications with 600V or lower voltage requirements.

TK9A60D(STA4,Q,M) (Toshiba Semiconductor and Storage)

This substitute operates at 600V Vdss, representing a 25% voltage derating. Continuous drain current is 9A, a 14.3% reduction from the main part. On-state resistance is higher at 830mOhm. Gate charge is 24nC. Power dissipation is 45W, exceeding the main part specification. The part is RoHS3 compliant. Operating temperature maximum is 150°C. TO-220SIS package provides through-hole mounting. This substitute is suitable only for applications with 600V or lower voltage requirements.

All substitute parts maintain RoHS3 compliance and REACH unaffected status, supporting regulatory requirements equivalent to the main part.

Frequently Asked Questions (FAQ)

Q: Can the IPA80R650CEXKSA2 be used as a direct replacement for the STF12NK80Z?

A: The IPA80R650CEXKSA2 maintains the 800V Vdss rating and through-hole TO-220 package configuration. However, the continuous drain current is reduced to 8A from 10.5A. Substitution is valid only when circuit design accommodates the lower current rating and the 33W power dissipation limit.

Q: What is the primary limitation of the Toshiba TK6A60W,S4VX and TK9A60D(STA4,Q,M) substitutes?

A: Both Toshiba devices operate at 600V Vdss, which is 200V lower than the STF12NK80Z specification. These substitutes are suitable only for applications designed for 600V maximum voltage operation. They cannot be used in circuits requiring the full 800V rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The STF12NK80Z and all identified substitute parts (IPA80R650CEXKSA2, TK6A60W,S4VX, and TK9A60D(STA4,Q,M)) are RoHS3 compliant with REACH unaffected status.

Q: How do gate charge differences affect circuit design?

A: The IPA80R650CEXKSA2 has significantly lower gate charge at 45nC compared to 87nC for the main part, reducing gate driver power requirements. The Toshiba devices have even lower gate charge at 12nC and 24nC respectively. Lower gate charge enables faster switching but requires driver compatibility verification.

Q: Are the TO-220FP, TO-220-3F, and TO-220SIS packages mechanically interchangeable?

A: All three packages are TO-220 family variants with three leads and through-hole mounting. Pin configurations are compatible for standard drain-gate-source arrangements. PCB footprints are functionally equivalent for standard TO-220 layouts. Physical dimensions may vary slightly between variants; verify mechanical clearance in confined spaces.

Q: What is the impact of reduced continuous drain current in substitutes?

A: The IPA80R650CEXKSA2 at 8A, TK6A60W,S4VX at 6.2A, and TK9A60D(STA4,Q,M) at 9A all represent reductions from the 10.5A main part specification. Substitution is valid only when maximum circuit current demand does not exceed the substitute part rating. Thermal management and power dissipation calculations must be recalculated based on actual operating current.

Q: Can operating temperature range differences affect substitution decisions?

A: The STF12NK80Z operates from -55°C to 150°C. The IPA80R650CEXKSA2 operates from -40°C to 150°C, with a 15°C higher minimum temperature. The Toshiba devices specify operation to 150°C maximum without explicit minimum temperature. Substitution is valid when circuit operating temperature remains within the substitute part specification.

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