STC6NF30V Equivalent & Substitute Parts

Part Overview

The STC6NF30V is a dual N-channel MOSFET array manufactured by STMicroelectronics, designed for surface mount applications requiring logic-level gate control. This device features a 30V drain-to-source voltage rating with 6A continuous drain current capability in an 8-TSSOP package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical performance, package form factor, and thermal operating range to ensure direct replacement capability.

Substiute Parts

STC6NF30V

STMicroelectronicsIn Stock: 9597STC6NF30V Datasheet

Current PartRFQ

SI6968BEDQ-T1-GE3

Vishay SiliconixIn Stock: 2611SI6968BEDQ-T1-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STC6NF30V requires evaluation of electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating must equal or exceed 30V
• Continuous drain current must meet or exceed 6A at 25°C
• On-state resistance must not exceed specified maximum values to maintain thermal performance
• Gate threshold voltage must support logic-level operation
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type must be 8-TSSOP to ensure PCB footprint compatibility
• Configuration must be dual N-channel to match functional topology
• Mounting type must be surface mount

Regulatory & Environmental Criteria:

• RoHS3 compliance required
• Moisture sensitivity level must be 1 (Unlimited)
• REACH unaffected status required

The SI6968BEDQ-T1-GE3 is identified as a substitute part; however, this device operates at a reduced voltage rating (20V Vdss) and lower continuous drain current (5.2A), representing a downgrade in electrical performance specifications relative to the STC6NF30V. This part is suitable only for applications where the lower voltage and current ratings are acceptable.

Parameter Comparison

Engineering Selection Recommendations

Primary Consideration: Product Status

The STC6NF30V is classified as obsolete. The SI6968BEDQ-T1-GE3 is an active product from a major manufacturer, ensuring ongoing availability and supply chain continuity.

Electrical Performance Trade-offs

The SI6968BEDQ-T1-GE3 operates at reduced electrical ratings: 20V Vdss versus 30V, and 5.2A continuous drain current versus 6A. These reductions represent a performance downgrade. Selection of this substitute is appropriate only for applications where the lower voltage and current specifications are compatible with circuit requirements.

Regulatory Compliance

Both parts maintain ROHS3 compliance, REACH unaffected status, and identical moisture sensitivity levels (MSL 1). No regulatory barriers exist to substitution from a compliance perspective.

Package Compatibility

Both devices utilize the 8-TSSOP package with identical physical dimensions (0.173", 4.40mm width), ensuring PCB footprint compatibility and direct mechanical replacement capability.

Thermal Performance

The SI6968BEDQ-T1-GE3 exhibits reduced maximum power dissipation (1W versus 1.5W), reflecting lower current and voltage ratings. Operating temperature range remains identical across both parts (-55°C to 150°C).

Gate Drive Characteristics

The SI6968BEDQ-T1-GE3 exhibits higher gate threshold voltage (1.6V versus 600mV) and doubled gate charge (18nC versus 9nC), requiring evaluation of gate driver circuit compatibility and switching speed performance in the target application.

Frequently Asked Questions (FAQ)

Q: Can the SI6968BEDQ-T1-GE3 directly replace the STC6NF30V in all applications?

A: Direct replacement is limited to applications where the reduced voltage rating (20V versus 30V) and lower continuous drain current (5.2A versus 6A) are acceptable. Applications requiring the full 30V rating or 6A current capability cannot use this substitute without circuit redesign.

Q: Are the packages physically identical?

A: Yes. Both devices use the 8-TSSOP package with identical dimensions (0.173", 4.40mm width). PCB footprints are compatible, enabling direct mechanical substitution.

Q: What are the differences in gate drive requirements?

A: The SI6968BEDQ-T1-GE3 has a higher gate threshold voltage (1.6V versus 600mV) and higher gate charge (18nC versus 9nC). Gate driver circuits must be evaluated to confirm adequate drive voltage and current capability for the substitute device.

Q: Are both parts RoHS compliant?

A: Yes. Both the STC6NF30V and SI6968BEDQ-T1-GE3 are ROHS3 compliant with identical moisture sensitivity levels (MSL 1, Unlimited).

Q: What is the significance of the obsolete status?

A: The STC6NF30V is obsolete, indicating discontinued manufacturing and limited future availability. The SI6968BEDQ-T1-GE3 is an active product with ongoing production and supply chain support.

Q: How do the on-state resistance values compare?

A: The SI6968BEDQ-T1-GE3 exhibits slightly lower on-state resistance (22mOhm @ 6.5A, 4.5V versus 25mOhm @ 3A, 4.5V). However, this advantage is offset by the lower current rating and reduced power dissipation capability.

Q: Can the SI6968BEDQ-T1-GE3 handle the same power dissipation?

A: No. The SI6968BEDQ-T1-GE3 has a maximum power dissipation of 1W compared to 1.5W for the STC6NF30V. Thermal design must account for this reduced capability.