STB35N60DM2 Equivalent & Substitute Parts

Part Overview

The STB35N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 28A continuous drain current at 25°C. This device operates in the MDmesh™ DM2 series and is housed in a Surface Mount TO-263 (D2PAK) package. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance parameters align within the specified operating ranges, allowing direct functional replacement in circuit applications while maintaining the same package footprint and thermal characteristics.

Substiute Parts

STB35N60DM2

STMicroelectronicsIn Stock: 5435STB35N60DM2 Datasheet

Current PartRFQ

IPB60R099CPATMA1

Infineon TechnologiesIn Stock: 1919IPB60R099CPATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STB35N60DM2 is determined by the following critical parameters:

Voltage Rating Requirement: Drain-to-source voltage (Vdss) must equal or exceed 600V to maintain electrical safety margins in the application circuit.

Current Capacity Requirement: Continuous drain current (Id) at 25°C must meet or exceed 28A to ensure the substitute can handle the specified load without thermal derating.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the specified 110mOhm at the rated gate-source voltage (10V) to maintain acceptable power dissipation and thermal performance.

Package Compatibility: The substitute must use the TO-263-3 (D2PAK) Surface Mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Temperature Range: Operating temperature range must span -55°C to 150°C (TJ) to support the full operational envelope.

Compliance Status: RoHS3 compliance and unlimited moisture sensitivity (MSL 1) are required for regulatory and manufacturing process compatibility.

The identified substitute part IPB60R099CPATMA1 meets these criteria with equivalent voltage rating, higher current capacity (31A), lower on-state resistance (99mOhm), compatible package footprint, and matching compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection: The STB35N60DM2 is the recommended choice for new circuit designs. This component carries Active product status, indicating full manufacturer support, ongoing production, and availability for long-term applications. The device meets all current regulatory requirements with RoHS3 compliance and provides stable supply chain access.

Substitute Selection Criteria: The IPB60R099CPATMA1 serves as a functional equivalent for applications requiring component replacement or where supply constraints necessitate alternative sourcing. This substitute provides superior electrical performance characteristics, including 10.7% higher continuous drain current (31A vs. 28A), 10% lower on-state resistance (99mOhm vs. 110mOhm), and 21.4% higher power dissipation capability (255W vs. 210W).

Compliance Consideration: Both components maintain identical RoHS3 compliance status and unlimited moisture sensitivity rating (MSL 1), ensuring regulatory and manufacturing process compatibility. However, the substitute carries "Not For New Designs" status, restricting its use to replacement applications or legacy system maintenance.

Electrical Performance Trade-offs: The substitute exhibits higher gate charge (80nC vs. 54nC), increased input capacitance (2800pF vs. 2400pF), and lower maximum gate-source voltage rating (±20V vs. ±25V). These differences require circuit-level evaluation to confirm compatibility with existing gate drive circuitry and switching frequency requirements.

Package Compatibility: Both devices utilize identical TO-263-3 (D2PAK) Surface Mount packaging, ensuring direct mechanical and thermal interface compatibility with existing PCB layouts without modification.

Frequently Asked Questions (FAQ)

Q: Can the IPB60R099CPATMA1 directly replace the STB35N60DM2 in existing designs?

A: Direct mechanical and electrical replacement is possible due to identical TO-263-3 package footprint and matching voltage/current ratings. However, the higher gate charge (80nC vs. 54nC) and increased input capacitance (2800pF vs. 2400pF) may affect switching frequency performance and gate drive circuit timing. Circuit-level validation is required to confirm functional equivalence in the specific application.

Q: What is the significance of the "Not For New Designs" status on the substitute part?

A: This designation indicates the Infineon IPB60R099CPATMA1 is in mature production phase with no active development or enhancement roadmap. The component remains available for replacement and legacy system support but should not be selected for new product development. The STB35N60DM2 (Active status) is the appropriate choice for new designs.

Q: Are there differences in gate threshold voltage between these parts?

A: Yes. The STB35N60DM2 has a gate threshold voltage of 5V at 250µA, while the IPB60R099CPATMA1 is rated at 3.5V at 1.2mA. This difference reflects different measurement conditions and may affect gate drive circuit design. Verify gate drive voltage levels are compatible with both threshold specifications.

Q: How do the on-state resistance values compare?

A: The STB35N60DM2 specifies 110mOhm maximum at 14A and 10V gate-source voltage. The IPB60R099CPATMA1 specifies 99mOhm maximum at 18A and 10V. The substitute exhibits lower on-state resistance, resulting in reduced conduction losses and improved thermal performance. This represents a performance advantage for power dissipation-critical applications.

Q: Is the maximum gate-source voltage difference significant?

A: The STB35N60DM2 supports ±25V maximum gate-source voltage, while the IPB60R099CPATMA1 is rated for ±20V. If the existing gate drive circuit applies voltages exceeding ±20V, the substitute part cannot be used without gate drive circuit modification. Verify gate drive voltage levels do not exceed ±20V before substitution.

Q: Do both parts have identical package dimensions?

A: Both components use the TO-263-3 (D2PAK) Surface Mount package with identical mechanical footprint, lead spacing, and thermal tab configuration. PCB layout modifications are not required for physical substitution.

Q: What is the impact of higher gate charge on circuit performance?

A: The substitute part exhibits 48% higher gate charge (80nC vs. 54nC). This increases the charge transfer time during switching transitions, potentially reducing maximum switching frequency capability and increasing gate drive power consumption. Evaluate switching frequency requirements and gate drive circuit current capacity before substitution.

Q: Are compliance certifications identical between both parts?

A: Both components maintain RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Regulatory and manufacturing process compatibility is equivalent. REACH status is unaffected for both parts, and both carry EAR99 export classification.