STB24N60DM2 Equivalent & Substitute Parts

Part Overview

The STB24N60DM2 is an N-Channel 600V 18A MOSFET manufactured by STMicroelectronics in the FDmesh™ II Plus series. This device is rated for 150W power dissipation and is housed in a TO-263 (D2PAK) surface mount package. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating.

Substitute parts are identified based on matching electrical specifications within the N-Channel MOSFET category, specifically devices with compatible drain-source voltage ratings, continuous drain current capabilities, and identical surface mount packaging. Equivalent devices enable design flexibility and supply chain continuity while maintaining functional performance in target applications.

Substiute Parts

STB24N60DM2

STMicroelectronicsIn Stock: 688276STB24N60DM2 Datasheet

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AOB27S60L

Alpha & Omega Semiconductor Inc.In Stock: 1318AOB27S60L Datasheet

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IXFA22N65X2

IXYSIn Stock: 1317IXFA22N65X2 Datasheet

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SIHB22N60ET1-GE3

Vishay SiliconixIn Stock: 7003SIHB22N60ET1-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STB24N60DM2 is determined by the following criteria:

Primary Matching Parameters:

• Drain to Source Voltage (Vdss): 600V or higher
• Continuous Drain Current (Id): Equal to or greater than 18A
• Package Type: TO-263 (D2PAK) surface mount configuration
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: -55°C to 150°C or broader

Secondary Compatibility Factors:

• Gate drive voltage compatibility at 10V
• RoHS3 compliance and MSL rating
• Mounting type: Surface mount

Substitute parts identified in this reference maintain electrical compatibility within the specified voltage and current ratings while preserving the same physical package footprint and thermal characteristics. Devices with higher current ratings or lower on-resistance values provide enhanced performance margins in the same package class.

Parameter Comparison

Engineering Selection Recommendations

STB24N60DM2 (Primary Selection) The STB24N60DM2 maintains Active product status and is the specified reference device. This part is suitable for new designs and ongoing production applications requiring 18A continuous drain current at 600V with standard thermal performance.

IXFA22N65X2 (Preferred Substitute) The IXFA22N65X2 from IXYS is rated Active and provides 22A continuous drain current with 650V Vdss rating. This device offers improved current handling and voltage margin while maintaining the same operating temperature range and RoHS3 compliance. The higher power dissipation rating (390W) accommodates increased thermal loads.

SIHB22N60ET1-GE3 (Alternative Substitute) The SIHB22N60ET1-GE3 from Vishay Siliconix is rated Active and provides 21A continuous drain current at 600V. This device delivers performance between the main part and higher-rated alternatives, with 227W power dissipation and improved on-resistance characteristics.

AOB27S60L (Legacy Substitute) The AOB27S60L from Alpha & Omega Semiconductor is marked Not For New Designs. While this device offers the highest current rating (27A) and lowest on-resistance (160mOhm), its discontinued design status restricts use to legacy system maintenance and existing production lines only.

Frequently Asked Questions (FAQ)

Q: Can the IXFA22N65X2 directly replace the STB24N60DM2 in existing designs?

A: The IXFA22N65X2 is electrically compatible as a substitute. Both devices share the same TO-263 (D2PAK) package footprint, operating temperature range (-55°C to 150°C), and RoHS3 compliance. The IXFA22N65X2 provides higher current rating (22A vs. 18A) and voltage rating (650V vs. 600V), making it suitable for direct PCB replacement without layout modifications.

Q: What is the difference between TO-263 and TO-263HV packages?

A: Both packages use the same physical D2PAK footprint and are mechanically compatible for PCB mounting. The TO-263HV designation indicates enhanced high-voltage performance characteristics. The IXFA22N65X2 uses TO-263HV while other substitutes use standard TO-263, but both are functionally interchangeable in the same circuit board layout.

Q: Why is the AOB27S60L marked "Not For New Designs"?

A: The AOB27S60L carries a Not For New Designs status, indicating the manufacturer has discontinued active development and support for this device. While the part remains available in inventory (1260 pcs), it is restricted to maintenance of existing systems and legacy production. New designs should select from Active-status alternatives such as IXFA22N65X2 or SIHB22N60ET1-GE3.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STB24N60DM2 has 29nC gate charge, while the SIHB22N60ET1-GE3 has 86nC. Higher gate charge requires more driver current and increases switching losses. The IXFA22N65X2 (38nC) and AOB27S60L (26nC) present intermediate values. Selection depends on gate driver capability and switching frequency requirements in the target application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The STB24N60DM2 and all identified substitute parts (AOB27S60L, IXFA22N65X2, SIHB22N60ET1-GE3) are RoHS3 compliant with MSL rating of 1 (Unlimited). All devices are REACH Unaffected and carry ECCN classification EAR99.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance directly affects power dissipation and thermal performance. The STB24N60DM2 has 200mOhm Rds On at 9A/10V. Substitute parts with lower Rds On values (AOB27S60L at 160mOhm, IXFA22N65X2 at 160mOhm, SIHB22N60ET1-GE3 at 180mOhm) generate less heat during operation, reducing thermal management requirements and improving efficiency in high-current applications.