ST13007DFP Equivalent & Substitute Parts

Part Overview

The ST13007DFP is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements. The part delivers 36 W maximum power dissipation and operates at junction temperatures up to 150°C.

Substiute Parts

ST13007DFP
STMicroelectronicsIn Stock: 2308ST13007DFP Datasheet
ST13007DFP
Current Part
FJPF13009H2TU
onsemiIn Stock: 1537FJPF13009H2TU Datasheet
FJPF13009H2TU
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 8 A
Power - Max 36 W
Vce Saturation (Max) @ Ib, Ic 2V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ST13007DFP is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

  • Transistor Type: NPN configuration
  • Voltage - Collector Emitter Breakdown (Max): 400 V minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack or compatible TO-220 variant
  • RoHS Status: ROHS3 Compliant

Performance Envelope Criteria:

  • Current - Collector (Ic) (Max): Equal to or greater than 8 A
  • Power - Max: Equal to or greater than 36 W
  • DC Current Gain (hFE) (Min): Equal to or greater than 8 @ 5A, 5V
  • Operating Temperature (TJ): Equal to or greater than 150°C

The FJPF13009H2TU manufactured by onsemi meets all mandatory matching criteria and exceeds performance envelope specifications, qualifying it as a direct substitute for the obsolete ST13007DFP.

Parameter Comparison

Parameter ST13007DFP (Main Part) FJPF13009H2TU (Substitute) Compatibility
Manufacturer STMicroelectronics onsemi Different manufacturer
Transistor Type NPN NPN Match
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V Match
Current - Collector (Ic) (Max) 8 A 12 A Substitute exceeds requirement
Power - Max 36 W 50 W Substitute exceeds requirement
Vce Saturation (Max) @ Ib, Ic 2V @ 2A, 8A 3V @ 3A, 12A Substitute rated at higher current
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V 8 @ 5A, 5V Match
Operating Temperature (TJ) 150°C 150°C Match
Mounting Type Through Hole Through Hole Match
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack Match
RoHS Status ROHS3 Compliant ROHS3 Compliant Match
REACH Status REACH Unaffected REACH Unaffected Match
Product Status Obsolete Obsolete Both obsolete

Engineering Selection Recommendations

The FJPF13009H2TU is a qualified substitute for the ST13007DFP based on the following engineering factors:

Compliance and Regulatory Alignment: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory continuity in applications subject to environmental and hazardous substance restrictions.

Electrical Performance: The FJPF13009H2TU maintains identical voltage rating (400 V) and current gain specifications (8 @ 5A, 5V) while providing enhanced current handling capacity (12 A versus 8 A) and increased power dissipation capability (50 W versus 36 W). These enhancements do not introduce incompatibility; they expand the operational margin within the same voltage class.

Package and Mounting Compatibility: Both devices utilize TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heat sink mounting arrangements.

Obsolescence Mitigation: Given that both parts carry obsolete product status, the FJPF13009H2TU provides a transition path for designs requiring continued component availability while maintaining electrical and mechanical interface equivalence.

Frequently Asked Questions (FAQ)

Q: Can the FJPF13009H2TU directly replace the ST13007DFP in existing designs?

A: Yes. Both devices share identical voltage rating (400 V), DC current gain specification (8 @ 5A, 5V), operating temperature (150°C), and TO-220-3 package configuration. The substitute part's higher current rating (12 A) and power rating (50 W) do not create incompatibility; they provide additional operational margin.

Q: What is the significance of the higher current rating on the FJPF13009H2TU?

A: The FJPF13009H2TU is rated for 12 A maximum collector current compared to 8 A on the ST13007DFP. In applications operating at or below 8 A, this difference is not a limiting factor. The higher rating provides design flexibility for future applications or circuit variations without requiring component redesign.

Q: Are there thermal management differences between these parts?

A: Both parts operate at identical maximum junction temperature (150°C) and utilize the same TO-220-3 package. Thermal management requirements are determined by application power dissipation and heat sink design, not by the parts themselves.

Q: Why does the FJPF13009H2TU show higher Vce saturation voltage?

A: The Vce saturation specification for the FJPF13009H2TU (3V @ 3A, 12A) is measured at higher current levels than the ST13007DFP (2V @ 2A, 8A). This reflects the different test conditions, not a performance degradation. At equivalent operating currents, saturation characteristics remain comparable.

Q: Are both parts truly obsolete?

A: Yes. Both the ST13007DFP and FJPF13009H2TU carry obsolete product status. Inventory availability may vary by distributor. For new designs, evaluation of current-generation NPN transistors in the 400 V class is recommended for long-term supply assurance.

Q: What compliance certifications apply to both parts?

A: Both parts are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations applicable to electronic components in most jurisdictions.

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