SSD2007ASTF Equivalent & Substitute Parts

Part Overview

The SSD2007ASTF is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features a 50V drain-to-source voltage rating with 2A continuous drain current capability and 2W maximum power dissipation. The component operates across an industrial temperature range of -55°C to 150°C and incorporates logic level gate technology for direct digital interface compatibility.

The SSD2007ASTF is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems or redesign initiatives.

Substiute Parts

SSD2007ASTF

onsemiIn Stock: 1007SSD2007ASTF Datasheet

Current PartRFQ

IRF7103TRPBF

Infineon TechnologiesIn Stock: 17412IRF7103TRPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SSD2007ASTF is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 50V
• Configuration: Must be 2 N-Channel (Dual) MOSFET array
• Operating Temperature Range: Must encompass -55°C to 150°C
• Package / Case: Must be 8-SOIC (0.154", 3.90mm Width) for PCB layout compatibility
• Mounting Type: Must be Surface Mount

Performance Considerations:

• Current - Continuous Drain (Id): Substitute must support minimum 2A at 25°C
• Rds On: Lower on-resistance values indicate improved performance and are acceptable
• Gate Charge (Qg): Lower values indicate faster switching characteristics
• Vgs(th): Threshold voltage must support logic level gate operation

The IRF7103TRPBF meets all mandatory substitution criteria and is classified as an active product with enhanced electrical performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: IRF7103TRPBF

The IRF7103TRPBF is the qualified substitute for the obsolete SSD2007ASTF. Selection is based on the following engineering factors:

Product Status: The IRF7103TRPBF is classified as Active, ensuring ongoing availability and manufacturer support. The SSD2007ASTF is Obsolete, making substitution necessary for continued supply chain operations.

Compliance and Certifications: Both devices share identical REACH Status (REACH Unaffected) and ECCN classification (EAR99). The IRF7103TRPBF carries RoHS3 Compliance certification, providing enhanced environmental and regulatory alignment for modern manufacturing standards.

Electrical Equivalence: The IRF7103TRPBF maintains identical Vdss (50V), operating temperature range (-55°C to 150°C), and maximum power rating (2W). The substitute provides superior continuous drain current capability (3A versus 2A) and significantly lower on-resistance (130 mOhm versus 300 mOhm), resulting in reduced power dissipation and improved thermal performance in equivalent applications.

Package and Mechanical Compatibility: Both devices utilize identical 8-SOIC packaging (0.154", 3.90mm Width) with surface mount configuration, enabling direct PCB layout compatibility without redesign.

Inventory Availability: The IRF7103TRPBF maintains substantial active inventory (17,400 pieces), supporting immediate procurement and production requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF7103TRPBF be used as a direct replacement for the SSD2007ASTF without PCB modifications?

A: Yes. Both devices share identical 8-SOIC packaging dimensions (0.154", 3.90mm Width) and surface mount configuration. No PCB layout modifications are required for mechanical or electrical interface compatibility.

Q: What are the key electrical differences between these devices?

A: The IRF7103TRPBF provides higher continuous drain current (3A versus 2A) and significantly lower on-resistance (130 mOhm versus 300 mOhm at comparable conditions). Both devices maintain identical Vdss (50V), operating temperature range (-55°C to 150°C), and maximum power dissipation (2W). The higher gate charge (30 nC versus 15 nC) in the substitute reflects its enhanced current handling capability.

Q: Are there any thermal performance implications when substituting the IRF7103TRPBF for the SSD2007ASTF?

A: The IRF7103TRPBF exhibits lower on-resistance, which reduces I²R losses during operation. This results in lower junction temperatures under equivalent load conditions, providing improved thermal margin and extended device reliability.

Q: Does the IRF7103TRPBF meet the same compliance and regulatory requirements as the SSD2007ASTF?

A: Both devices share identical REACH Status (REACH Unaffected) and ECCN classification (EAR99). The IRF7103TRPBF additionally carries RoHS3 Compliance certification, meeting current environmental standards for electronic components.

Q: What is the significance of the lower Vgs(th) in the IRF7103TRPBF?

A: The IRF7103TRPBF has a lower gate threshold voltage (3V versus 4V), indicating improved logic level gate compatibility and faster turn-on response at lower gate drive voltages. This characteristic is beneficial for direct digital interface applications and reduces gate drive power requirements.

Q: Is the higher gate charge of the IRF7103TRPBF a concern for switching applications?

A: The higher gate charge (30 nC versus 15 nC) reflects the substitute's superior current handling capability. In applications where gate drive capability is adequate, this characteristic does not present a limitation. Gate drive circuit design should be verified for compatibility with the substitute device's charge requirements.

Q: What is the inventory status difference between these devices?

A: The SSD2007ASTF is classified as Obsolete with 930 pieces in stock. The IRF7103TRPBF is classified as Active with 17,400 pieces in stock, ensuring long-term availability and supply chain continuity.