SFP9540 P-Channel MOSFET 100V 17A Equivalent & Substitute Parts

Part Overview

The SFP9540 is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 17A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and dissipates up to 132W at the case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220-3 package form factor.

Key Parameters

Parameter	SFP9540 Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
Rds On (Max) @ 8.5A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	54	nC
Power Dissipation (Max)	132	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the SFP9540 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: P-Channel (all substitutes must be P-Channel)
Drain to Source Voltage (Vdss): 100V minimum
Package: TO-220-3 through-hole configuration
Continuous Drain Current (Id): Minimum 17A at 25°C
Gate Threshold Voltage (Vgs(th)): 4V maximum at 250µA
Maximum Gate Voltage (Vgs): ±20V or ±30V acceptable
Operating Temperature: -55°C to 150°C minimum upper limit

Performance Parameters for Evaluation:

On-Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Input Capacitance (Ciss): Affects gate drive requirements

All four substitute parts meet the mandatory compatibility criteria. Differences in performance parameters reflect manufacturing variations and design improvements across different manufacturers and product series.

Parameter Comparison

Parameter	SFP9540	FQP17P10	IRF9540NPBF	IRF9540PBF	SPP15P10PLHXKSA1	Unit
Manufacturer	onsemi	onsemi	Infineon Technologies	Vishay Siliconix	Infineon Technologies	—
Product Status	Obsolete	Active	Active	Active	Active	—
Vdss	100	100	100	100	100	V
Id @ 25°C	17	16.5	23	19	15	A (Tc)
Rds On (Max) @ 10V	200 @ 8.5A	190 @ 8.25A	117 @ 11A	200 @ 11A	200 @ 11.3A	mOhm
Vgs(th) (Max) @ 250µA	4	4	4	4	2	V
Gate Charge (Qg) @ 10V	54	39	97	61	62	nC
Vgs (Max)	±30	±30	±20	±20	±20	V
Input Capacitance (Ciss) @ 25V	1535	1100	1300	1400	1490	pF
Power Dissipation (Max)	132	100	140	150	128	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175	°C (TJ)
Package	TO-220-3	TO-220-3	TO-220AB	TO-220AB	PG-TO220-3	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FQP17P10 (onsemi)

The FQP17P10 is an active product from the same manufacturer as the SFP9540. It provides 16.5A continuous drain current, meeting the 17A requirement within acceptable tolerance. The device features improved on-resistance (190 mOhm) and reduced gate charge (39 nC), resulting in lower switching losses. Power dissipation is rated at 100W, which is lower than the SFP9540 but remains adequate for equivalent thermal management. Full operating temperature range (-55°C to 175°C) matches the original part. ROHS3 compliance and active product status ensure long-term availability and supply chain stability.

IRF9540NPBF (Infineon Technologies)

The IRF9540NPBF is an active HEXFET® product offering superior electrical performance with 23A continuous drain current and significantly lower on-resistance (117 mOhm at 11A). Power dissipation reaches 140W, providing enhanced thermal margin. Gate charge is higher at 97 nC due to the higher current rating. The maximum gate voltage is limited to ±20V compared to ±30V on the SFP9540. Operating temperature upper limit is 150°C, which is 25°C lower than the original part. ROHS3 compliance and high inventory availability support production requirements. Package designation is TO-220AB, which is mechanically compatible with TO-220-3 through-hole applications.

IRF9540PBF (Vishay Siliconix)

The IRF9540PBF is an active product providing 19A continuous drain current with matched on-resistance (200 mOhm) to the SFP9540. Power dissipation is rated at 150W, the highest among all substitutes, offering superior thermal performance. Gate charge is 61 nC, representing a moderate increase from the original part. Full operating temperature range (-55°C to 175°C) and ±20V maximum gate voltage are specified. ROHS3 compliance and substantial inventory (55,400 pieces) ensure availability. Package is TO-220AB, compatible with through-hole TO-220-3 mounting.

SPP15P10PLHXKSA1 (Infineon Technologies)

The SPP15P10PLHXKSA1 is an active SIPMOS® product rated for 15A continuous drain current, which is below the 17A requirement of the SFP9540. On-resistance is 200 mOhm, matching the original specification. Gate threshold voltage is lower at 2V, providing faster switching response. Power dissipation is 128W, comparable to the SFP9540. Full operating temperature range (-55°C to 175°C) is supported. ROHS3 compliance is confirmed. This part is suitable only for applications where the 15A rating is acceptable and does not represent a direct equivalent for full-current operation.

Frequently Asked Questions (FAQ)

Q: Can the FQP17P10 directly replace the SFP9540 in all applications?

A: The FQP17P10 meets all mandatory compatibility criteria with 16.5A continuous drain current, 100V Vdss, and identical operating temperature range. The slightly lower current rating (0.5A difference) is within typical design margins. Verify that your application does not require the full 17A specification at maximum case temperature. Both parts are P-Channel MOSFETs in TO-220-3 packages with matching gate threshold voltages.

Q: What are the advantages of the IRF9540NPBF over the SFP9540?

A: The IRF9540NPBF offers 23A continuous drain current (6A higher than SFP9540), significantly lower on-resistance (117 mOhm versus 200 mOhm), and higher power dissipation (140W versus 132W). These improvements reduce conduction losses and heat generation. The trade-off is a higher maximum gate voltage limit (±20V versus ±30V) and a lower maximum operating temperature (150°C versus 175°C). Gate charge is higher at 97 nC, requiring slightly more gate drive energy.

Q: Is the IRF9540PBF suitable for high-temperature applications?

A: Yes. The IRF9540PBF supports the full operating temperature range of -55°C to 175°C, matching the SFP9540. It provides 19A continuous drain current and 150W power dissipation, both exceeding the original part specifications. The maximum gate voltage is ±20V, which is acceptable for most gate drive circuits. This part is recommended for applications requiring sustained operation at elevated temperatures.

Q: Why does the SPP15P10PLHXKSA1 have lower current rating than the SFP9540?

A: The SPP15P10PLHXKSA1 is rated for 15A continuous drain current, which is 2A below the SFP9540 specification. This reflects different die design and thermal management characteristics within the SIPMOS® product family. This part is suitable only for applications where the 15A rating is sufficient and does not represent a full equivalent for designs requiring the complete 17A capacity.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts (FQP17P10, IRF9540NPBF, IRF9540PBF, and SPP15P10PLHXKSA1) are confirmed ROHS3 compliant. The original SFP9540 does not specify RoHS status. All parts are REACH unaffected and classified under ECCN EAR99.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole packages with identical pin configurations and mechanical footprints suitable for PCB mounting. TO-220-3 is the standard designation, while TO-220AB is an alternative designation used by some manufacturers. The packages are mechanically and electrically interchangeable for through-hole applications. Verify PCB pad dimensions and lead spacing compatibility with your specific design.

Q: Which substitute part has the lowest switching losses?

A: The FQP17P10 has the lowest gate charge at 39 nC, resulting in the lowest switching energy requirement. The IRF9540NPBF has the lowest on-resistance at 117 mOhm, minimizing conduction losses. Selection depends on whether your application is switching-loss dominated or conduction-loss dominated. High-frequency applications benefit from lower gate charge; high-current continuous operation benefits from lower on-resistance.

Q: Can I use the IRF9540NPBF in applications with ±30V gate voltage?

A: No. The IRF9540NPBF is rated for maximum gate voltage of ±20V. Applying ±30V exceeds the device specification and risks gate oxide damage. If your circuit requires ±30V gate voltage capability, use the FQP17P10 or SPP15P10PLHXKSA1, both rated for ±30V and ±20V respectively. Verify gate drive circuit voltage limits before part selection.

Q: What inventory considerations apply to these substitute parts?

A: The FQP17P10 has 15,434 pieces in stock, IRF9540NPBF has 65,200 pieces, IRF9540PBF has 55,400 pieces, and SPP15P10PLHXKSA1 has 883 pieces. The IRF9540NPBF offers the highest availability. For long-term production programs, confirm supplier lead times and allocation policies with your component distributor.

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