SE10FD-M3/I Equivalent & Substitute Parts

Part Overview

The SE10FD-M3/I is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-219AB package. This component is classified as an active product with standard recovery characteristics and is RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Substiute Parts

SE10FD-M3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 905SE10FD-M3/I Datasheet

Current PartRFQ

SE10FD-M3/H

Vishay General Semiconductor - Diodes DivisionIn Stock: 30966SE10FD-M3/H Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SE10FD-M3/I is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part SE10FD-M3/H is classified as a parametric equivalent because it maintains identical specifications across the following key criteria:

• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
• Reverse Recovery Time (trr): 780 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 7.5 pF @ 4V, 1MHz
• Package / Case: DO-219AB
• Mounting Type: Surface Mount
• Operating Temperature - Junction: -55°C to 175°C
• Technology: Standard
• RoHS Status: ROHS3 Compliant

Both parts share the same base product number (SE10) and are manufactured by the same supplier, confirming functional and mechanical interchangeability.

Parameter Comparison

Engineering Selection Recommendations

Both SE10FD-M3/I and SE10FD-M3/H are active products manufactured by Vishay General Semiconductor - Diodes Division and carry identical electrical and mechanical specifications. Selection between these parts is based on availability and supply chain requirements rather than technical performance differentiation.

The SE10FD-M3/H currently maintains higher inventory levels (30,917 pcs) compared to the SE10FD-M3/I (797 pcs), making it suitable for applications requiring extended lead time assurance or high-volume procurement. Both parts satisfy RoHS3 compliance requirements and REACH unaffected status, confirming regulatory equivalence for applications subject to environmental and hazardous substance restrictions.

Frequently Asked Questions (FAQ)

Q: Can SE10FD-M3/H be used as a direct replacement for SE10FD-M3/I?

A: Yes. Both parts are parametric equivalents with identical electrical ratings (200 V, 1 A), forward voltage characteristics (1.05 V @ 1 A), reverse recovery time (780 ns), and package specifications (DO-219AB surface mount). No circuit modifications are required.

Q: Are there any differences in thermal performance between these parts?

A: No. Both parts share identical operating temperature ranges (-55°C to 175°C junction temperature) and reverse leakage characteristics (5 µA @ 200 V), indicating equivalent thermal behavior.

Q: Do both parts meet the same compliance standards?

A: Yes. Both SE10FD-M3/I and SE10FD-M3/H are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. They are functionally equivalent for regulatory purposes.

Q: What is the significance of the different part number suffixes (-M3/I versus -M3/H)?

A: The suffix designations reflect manufacturing or packaging variations within the same electrical specification family. Both parts maintain identical electrical and mechanical parameters and are interchangeable at the circuit level.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Both parts exhibit standard recovery characteristics with 780 ns reverse recovery time. Application suitability depends on circuit-specific switching frequency requirements, which are not specified in the provided parameters.

Q: What is the difference in capacitance between these parts?

A: There is no difference. Both parts exhibit 7.5 pF capacitance measured at 4 V and 1 MHz, confirming identical junction capacitance characteristics.