S5B R7G General Purpose Rectifier Diode – Equivalent & Substitute Parts

Part Overview

The S5B R7G is a general purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 5 A average rectified current in a surface mount DO-214AB (SMC) package. This component is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design and production requirements. The diode operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substiute Parts

S5B R7G
Taiwan Semiconductor CorporationIn Stock: 1137S5B R7G Datasheet
S5B R7G
Current Part
S5B
Diotec SemiconductorIn Stock: 46130S5B Datasheet
S5B
Parametric Equivalent
S5B V7G
Taiwan Semiconductor CorporationIn Stock: 2164S5B V7G Datasheet
S5B V7G
Parametric Equivalent
CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
CGRC502-G
Direct
S5BC-13-F
Diodes IncorporatedIn Stock: 6745S5BC-13-F Datasheet
S5BC-13-F
Direct
ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
ES3B-13-F
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ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
ES3BB-13-F
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
ESH3B-E3/57T
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
ESH3B-E3/9AT
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
ESH3B-M3/57T
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
ESH3B-M3/9AT
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ESH3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1135ESH3BHE3_A/H Datasheet
ESH3BHE3_A/H
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ESH3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1129ESH3BHE3_A/I Datasheet
ESH3BHE3_A/I
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
RS3B-13-F
Similar
RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
RS3BB-13-F
Similar
RS3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 831RS3BHE3_A/H Datasheet
RS3BHE3_A/H
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RS3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 819RS3BHE3_A/I Datasheet
RS3BHE3_A/I
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S3B-13-F
Diodes IncorporatedIn Stock: 30129S3B-13-F Datasheet
S3B-13-F
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S3B-TP
Micro Commercial CoIn Stock: 8884S3B-TP Datasheet
S3B-TP
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S3BB-13-F
Diodes IncorporatedIn Stock: 19031S3BB-13-F Datasheet
S3BB-13-F
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S3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1366S3BHE3_A/H Datasheet
S3BHE3_A/H
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S3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 968S3BHE3_A/I Datasheet
S3BHE3_A/I
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U3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
U3B-E3/57T
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U3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
U3B-E3/9AT
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U3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 864U3B-M3/57T Datasheet
U3B-M3/57T
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U3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 823U3B-M3/9AT Datasheet
U3B-M3/9AT
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S5B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 30217S5B-E3/57T Datasheet
S5B-E3/57T
Parametric Equivalent
S5B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1138S5B-E3/9AT Datasheet
S5B-E3/9AT
Parametric Equivalent
S5B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7588S5B-M3/57T Datasheet
S5B-M3/57T
Parametric Equivalent
S5B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 997S5B-M3/9AT Datasheet
S5B-M3/9AT
Parametric Equivalent
S5BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2628S5BHE3_A/H Datasheet
S5BHE3_A/H
Parametric Equivalent
S5BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 812S5BHE3_A/I Datasheet
S5BHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 5 A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 5 A V
Reverse Recovery Time (trr) 1.5 µs
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Speed Classification Standard Recovery >500ns, > 200mA (Io)
Package / Case DO-214AB, SMC
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Standard

Substitute Part Grouping Explanation

Substitution of the S5B R7G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 5 A minimum
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V or lower at rated current
  • Package / Case: DO-214AB (SMC) surface mount
  • Reverse Recovery Time (trr): 1.5 µs or faster
  • Current - Reverse Leakage @ Vr: 10 µA or lower at 100 V
  • Operating Temperature - Junction: -55°C to 150°C minimum range
  • Technology: Standard recovery classification

Direct Equivalents meet all primary criteria with identical electrical specifications and package configuration.

Parametric Equivalents meet all primary criteria but may have enhanced current ratings (8 A) or slightly different temperature ranges, remaining functionally compatible within the application envelope.

Similar Parts share the same voltage and package specifications but operate at reduced current ratings (3 A) or employ fast recovery technology, suitable only for applications where lower current requirements are acceptable.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [µs/ns] Ir @ Vr [µA] Package Temp Range [°C] Product Status
S5B R7G Taiwan Semiconductor Corporation 100 5 1.15 @ 5 A 1.5 µs 10 @ 100 V DO-214AB (SMC) -55 to 150 Discontinued
S5B Diotec Semiconductor 100 8 1.1 @ 5 A 1.5 µs 10 @ 100 V DO-214AB (SMC) -50 to 150 Active
S5B V7G Taiwan Semiconductor Corporation 100 5 1.15 @ 5 A 1.5 µs 10 @ 100 V DO-214AB (SMC) -55 to 150 Discontinued
CGRC502-G Comchip Technology 100 5 1.15 @ 5 A Standard Recovery 10 @ 100 V DO-214AB (SMC) Active
S5BC-13-F Diodes Incorporated 100 5 1.15 @ 5 A 1.5 µs 10 @ 100 V DO-214AB (SMC) -65 to 150 Active
ES3B-13-F Diodes Incorporated 100 3 0.9 @ 3 A 25 ns 10 @ 100 V DO-214AB (SMC) -55 to 150 Active
ES3BB-13-F Diodes Incorporated 100 3 0.9 @ 3 A 25 ns 10 @ 100 V DO-214AA (SMB) -55 to 150 Active
ESH3B-E3/57T Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-E3/9AT Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-M3/57T Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-M3/9AT Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Drop-In Replacement):

The S5BC-13-F (Diodes Incorporated) and CGRC502-G (Comchip Technology) are direct functional equivalents to the S5B R7G. Both parts maintain 100 V reverse voltage, 5 A average rectified current, 1.15 V forward voltage at 5 A, and DO-214AB (SMC) package configuration. The S5BC-13-F extends the operating temperature range to -65°C to 150°C and is currently in active production status. Both parts comply with RoHS3 and REACH standards, matching the compliance profile of the original component.

Parametric Equivalent (Enhanced Current Rating):

The S5B from Diotec Semiconductor provides an 8 A average rectified current rating while maintaining 100 V reverse voltage and 1.5 µs reverse recovery time in the same DO-214AB (SMC) package. This part is suitable for applications where higher current capacity is beneficial without circuit redesign. Operating temperature range is -50°C to 150°C. This part is in active production status and RoHS3 compliant.

Similar Parts (Reduced Current Rating):

The ES3B-13-F, ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, and ESH3B-M3/9AT are suitable only for applications where the circuit current requirement does not exceed 3 A. These parts employ fast recovery technology (25 ns to 40 ns) compared to the standard recovery (1.5 µs) of the original part. The ES3BB-13-F uses a DO-214AA (SMB) package, which differs from the original DO-214AB (SMC) package and requires board layout modification. All similar parts are in active production status and RoHS3 compliant.

Compliance and Availability:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status. The S5BC-13-F and CGRC502-G are in active production with substantial inventory availability, ensuring supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the S5B from Diotec Semiconductor (8 A rating) be used in place of the S5B R7G (5 A rating)?

A: Yes. The Diotec S5B maintains all critical electrical parameters of the original part (100 V reverse voltage, 1.5 µs reverse recovery time, 1.1 V forward voltage at 5 A) and uses the identical DO-214AB (SMC) package. The higher 8 A current rating does not create incompatibility; it provides additional design margin. The operating temperature range is -50°C to 150°C, which covers the original -55°C to 150°C range except at the lower extreme.

Q: Why are the ES3B and ESH3B series listed as similar rather than direct equivalents?

A: These parts operate at 3 A average rectified current, which is 40% lower than the original 5 A specification. They employ fast recovery technology (25 ns to 40 ns) rather than standard recovery (1.5 µs). These differences make them unsuitable for circuits designed for 5 A operation but acceptable for lower-current applications sharing the same 100 V voltage rating and DO-214AB (SMC) package.

Q: Is the ES3BB-13-F compatible with the S5B R7G?

A: The ES3BB-13-F shares the 100 V voltage rating and 3 A current rating with other ES3B variants but uses a DO-214AA (SMB) package instead of the DO-214AB (SMC) package of the original part. This package difference requires board layout modification and is not a direct drop-in replacement.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Standard recovery diodes (S5B R7G, 1.5 µs reverse recovery time) are suitable for general purpose rectification applications. Fast recovery diodes (ES3B series, 25 ns to 40 ns reverse recovery time) are optimized for higher-frequency switching applications. The choice depends on circuit operating frequency and switching characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory profile of the original S5B R7G component.

Q: Which substitute part offers the best supply chain continuity?

A: The S5BC-13-F (Diodes Incorporated) and S5B (Diotec Semiconductor) are in active production status with substantial inventory levels. The S5BC-13-F provides direct electrical equivalence with extended temperature range (-65°C to 150°C) and is the primary recommendation for drop-in replacement applications.

Q: Can I use the CGRC502-G as a direct replacement?

A: Yes. The CGRC502-G from Comchip Technology maintains 100 V reverse voltage, 5 A average rectified current, 1.15 V forward voltage at 5 A, and DO-214AB (SMC) package configuration. It is in active production status and RoHS3 compliant, making it suitable for direct replacement in the S5B R7G application.

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