S4D R7G Equivalent & Substitute Parts

Part Overview

The S4D R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 4 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent substitute components that maintain electrical and mechanical compatibility for existing designs and new production requirements.

Key Parameters

Parameter	S4D R7G Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	1.15 @ 4	V @ A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Package / Case	DO-214AB, SMC	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the S4D R7G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 200 V
Current - Average Rectified (Io): Must equal or exceed 4 A
Package / Case: Must be DO-214AB (SMC) surface mount
Speed Classification: Must support Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type: Must be Surface Mount
RoHS Status: Must be ROHS3 Compliant

Secondary Compatibility Factors:

Operating Temperature Range: Must accommodate -55°C to 150°C junction temperature
Forward Voltage (Vf): Lower values indicate improved efficiency; values at or below 1.15 V @ rated current are preferred
Reverse Leakage Current: Lower values indicate superior blocking characteristics

Substitute parts are grouped into two categories based on current rating:

Category A - Direct Current Rating Match (4 A or Higher): Parts rated for 4 A or 5 A average rectified current provide direct functional equivalence to the S4D R7G without derating considerations.

Category B - Reduced Current Rating (3 A): Parts rated for 3 A average rectified current operate below the original specification and are suitable only for applications where the actual circuit current demand does not exceed 3 A.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	Speed	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
S4D R7G	Taiwan Semiconductor Corporation	200	4	1.15 @ 4A	Fast Recovery ≤ 500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Discontinued
CGRC503-G	Comchip Technology	200	5	1.15 @ 5A	Standard Recovery >500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
CFRC303-G	Comchip Technology	200	3	1.3 @ 3A	Fast Recovery ≤ 500ns	5 @ 200V	DO-214AB (SMC)	-55 to 150	Active
CSFC303-G	Comchip Technology	200	3	0.95 @ 3A	Fast Recovery ≤ 500ns	5 @ 200V	DO-214AB (SMC)	-55 to 150	Active
CURC303-G	Comchip Technology	200	3	1.0 @ 3A	Fast Recovery ≤ 500ns	5 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ER3D-TP	Micro Commercial Co	200	3	0.95 @ 3A	Fast Recovery ≤ 500ns	5 @ 200V	DO-214AB (SMC)	-50 to 175	Active
ES3D	Diotec Semiconductor	200	3	0.9 @ 3A	Fast Recovery ≤ 500ns	5 @ 200V	DO-214AB (SMC)	-50 to 150	Active
ES3D-13-F	Diodes Incorporated	200	3	0.9 @ 3A	Fast Recovery ≤ 500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ES3D-E3/57T	Vishay General Semiconductor - Diodes Division	200	3	0.9 @ 3A	Fast Recovery ≤ 500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ES3D-E3/9AT	Vishay General Semiconductor - Diodes Division	200	3	0.9 @ 3A	Fast Recovery ≤ 500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ES3D-M3/57T	Vishay General Semiconductor - Diodes Division	200	3	0.9 @ 3A	Fast Recovery ≤ 500ns	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active

Engineering Selection Recommendations

Direct Equivalent (4 A or Higher Current Rating):

CGRC503-G (Comchip Technology) is the only substitute part that maintains the 4 A or higher current rating specification. This part is rated for 5 A average rectified current at 200 V reverse voltage in the DO-214AB (SMC) package. The forward voltage specification (1.15 V @ 5 A) matches the original S4D R7G. CGRC503-G is ROHS3 compliant and carries active product status. The primary distinction is that CGRC503-G employs Standard Recovery (>500ns) speed classification compared to the S4D R7G's Fast Recovery (≤500ns) specification. This difference is acceptable in applications where switching speed is not a critical performance parameter.

Reduced Current Rating Substitutes (3 A):

Multiple substitute parts are available with 3 A average rectified current ratings. These parts are suitable for applications where the actual circuit current demand does not exceed 3 A:

CFRC303-G (Comchip Technology): Fast Recovery ≤ 500ns, forward voltage 1.3 V @ 3 A, reverse leakage 5 µA @ 200 V
CSFC303-G (Comchip Technology): Fast Recovery ≤ 500ns, forward voltage 0.95 V @ 3 A, reverse leakage 5 µA @ 200 V
CURC303-G (Comchip Technology): Fast Recovery ≤ 500ns, forward voltage 1.0 V @ 3 A, reverse leakage 5 µA @ 200 V
ER3D-TP (Micro Commercial Co): Fast Recovery ≤ 500ns, forward voltage 0.95 V @ 3 A, reverse leakage 5 µA @ 200 V, operating temperature -50°C to 175°C
ES3D (Diotec Semiconductor): Fast Recovery ≤ 500ns, forward voltage 0.9 V @ 3 A, reverse leakage 5 µA @ 200 V
ES3D-13-F (Diodes Incorporated): Fast Recovery ≤ 500ns, forward voltage 0.9 V @ 3 A, reverse leakage 10 µA @ 200 V
ES3D-E3/57T (Vishay General Semiconductor - Diodes Division): Fast Recovery ≤ 500ns, forward voltage 0.9 V @ 3 A, reverse leakage 10 µA @ 200 V
ES3D-E3/9AT (Vishay General Semiconductor - Diodes Division): Fast Recovery ≤ 500ns, forward voltage 0.9 V @ 3 A, reverse leakage 10 µA @ 200 V
ES3D-M3/57T (Vishay General Semiconductor - Diodes Division): Fast Recovery ≤ 500ns, forward voltage 0.9 V @ 3 A, reverse leakage 10 µA @ 200 V

All substitute parts maintain ROHS3 compliance and active product status. All substitute parts are packaged in DO-214AB (SMC) surface mount configuration and support the required operating temperature range or extended ranges.

Frequently Asked Questions (FAQ)

Q: Can CGRC503-G be used as a direct replacement for S4D R7G?

A: CGRC503-G meets the primary electrical specifications: 200 V reverse voltage, 5 A current rating (exceeds the 4 A requirement), DO-214AB (SMC) package, and ROHS3 compliance. The difference is that CGRC503-G uses Standard Recovery (>500ns) speed classification while S4D R7G uses Fast Recovery (≤500ns). In applications where switching speed is not critical, CGRC503-G provides functional equivalence. In high-frequency switching applications, the recovery time difference may affect circuit performance.

Q: Why are 3 A rated parts listed as substitutes for a 4 A rated diode?

A: The 3 A rated parts are listed as substitutes only for applications where the actual circuit current does not exceed 3 A. These parts maintain all other critical specifications: 200 V reverse voltage, DO-214AB (SMC) package, Fast Recovery speed classification, and ROHS3 compliance. Using a 3 A part in a circuit requiring 4 A operation would result in diode overheating and failure.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape (CT) and Digi-Reel® packaging are used for lower-volume applications and manual assembly, while Tape & Reel (TR) packaging is used for high-volume automated assembly. Both packaging formats contain the same electronic component in the same DO-214AB (SMC) case. Selection between packaging types depends on production volume and assembly equipment capabilities, not electrical performance.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this document are ROHS3 compliant, matching the compliance status of the original S4D R7G. All parts are also REACH unaffected.

Q: What is the significance of forward voltage (Vf) differences among substitute parts?

A: Forward voltage determines the voltage drop across the diode during conduction. Lower forward voltage values result in reduced power dissipation and improved circuit efficiency. For example, ES3D has a forward voltage of 0.9 V @ 3 A compared to CFRC303-G at 1.3 V @ 3 A. In high-current or high-frequency applications, the lower forward voltage of ES3D reduces heat generation. However, this difference is typically secondary to current rating and package compatibility in substitution decisions.

Q: Can parts with different reverse recovery times be interchanged?

A: Reverse recovery time (trr) affects switching speed and is specified for parts where it is provided. Parts with shorter reverse recovery times (20-50 ns) switch faster than parts with longer recovery times (>500 ns). In low-frequency rectification applications, reverse recovery time differences are not critical. In high-frequency switching applications, shorter recovery times reduce switching losses and electromagnetic interference. Substitution should consider the application's switching frequency requirements.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates that the diode exhibits fast recovery characteristics with a reverse recovery time of 500 nanoseconds or less when the forward current exceeds 200 milliamps. This classification is used for general-purpose rectification and moderate-frequency switching applications.

Q: Are there inventory considerations for substitute part selection?

A: Inventory levels vary significantly among substitute parts. ES3D (Diotec Semiconductor) has 131,200 pieces in stock, while ES3D-M3/57T (Vishay) has 2,000 pieces. Higher inventory levels may indicate better long-term availability and supply chain stability. However, inventory levels are subject to change and should be verified at the time of procurement.

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