S34MS02G100BHB003 Equivalent & Substitute Parts

Part Overview

The S34MS02G100BHB003 is a 2Gbit NAND Flash memory IC manufactured by Cypress Semiconductor Corp, designed for parallel interface applications in automotive-grade systems. This device features a 63-VFBGA package with 45 ns access time and operates across the -40°C to 105°C temperature range. The product is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain compatibility with existing system designs while meeting automotive qualification requirements.

Substiute Parts

S34MS02G100BHB003
Cypress Semiconductor CorpIn Stock: 1150S34MS02G100BHB003 Datasheet
S34MS02G100BHB003
Current Part
MT29F2G16ABBEAH4-AAT:E TR
Micron Technology Inc.In Stock: 2605MT29F2G16ABBEAH4-AAT:E TR Datasheet
MT29F2G16ABBEAH4-AAT:E TR
Direct

Key Parameters

Parameter Value
Memory Size 2Gbit
Memory Format FLASH - NAND
Memory Organization 256M x 8
Memory Interface Parallel
Access Time 45 ns
Voltage Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 105°C
Package Type 63-VFBGA (11x9)
Grade Automotive
Qualification AEC-Q100
RoHS Status ROHS3 Compliant
MSL Rating 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the S34MS02G100BHB003 is determined by strict equivalence across the following critical parameters:

  • Memory Capacity: 2Gbit total storage
  • Technology: FLASH - NAND architecture
  • Interface Type: Parallel interface for data access
  • Supply Voltage: 1.7V ~ 1.95V operating range
  • Temperature Grade: -40°C ~ 105°C automotive operating range
  • Package Form Factor: 63-VFBGA ball grid array
  • Automotive Compliance: AEC-Q100 qualification
  • Environmental Compliance: ROHS3 and REACH requirements

The MT29F2G16ABBEAH4-AAT:E TR qualifies as a direct substitute based on matching these core electrical and mechanical specifications, despite differences in memory organization (128M x 16 versus 256M x 8) and package dimensions (9x11 versus 11x9), which remain within the 63-VFBGA classification.

Parameter Comparison

Parameter S34MS02G100BHB003 MT29F2G16ABBEAH4-AAT:E TR
Manufacturer Cypress Semiconductor Corp Micron Technology Inc.
Memory Size 2Gbit 2Gbit
Memory Format FLASH - NAND FLASH - NAND
Memory Organization 256M x 8 128M x 16
Memory Interface Parallel Parallel
Voltage Supply 1.7V ~ 1.95V 1.7V ~ 1.95V
Operating Temperature -40°C ~ 105°C -40°C ~ 105°C
Package Type 63-VFBGA (11x9) 63-VFBGA (9x11)
Grade Automotive Automotive
Qualification AEC-Q100 AEC-Q100
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL Rating 3 (168 Hours) 3 (168 Hours)
Product Status Discontinued at DiGi Electronics Active

Engineering Selection Recommendations

The MT29F2G16ABBEAH4-AAT:E TR from Micron Technology Inc. serves as the qualified substitute for the discontinued S34MS02G100BHB003. Both devices maintain identical electrical specifications including supply voltage range, operating temperature range, and automotive-grade AEC-Q100 qualification. Both comply with ROHS3 and REACH requirements with matching MSL ratings.

The substitute part is currently in active production status with 2501 units available in inventory, ensuring supply chain continuity. The difference in memory organization (128M x 16 versus 256M x 8) reflects different internal architecture but does not affect functional compatibility in parallel interface applications where total 2Gbit capacity is the primary requirement.

Frequently Asked Questions (FAQ)

Q: Can the MT29F2G16ABBEAH4-AAT:E TR directly replace the S34MS02G100BHB003 in existing designs?

A: Yes. Both devices are 2Gbit NAND Flash memories with parallel interfaces, identical supply voltage ranges (1.7V ~ 1.95V), matching operating temperature specifications (-40°C ~ 105°C), and equivalent automotive-grade AEC-Q100 qualification. The 63-VFBGA package classification is maintained across both parts.

Q: What is the significance of the different memory organization (256M x 8 versus 128M x 16)?

A: Memory organization describes the internal address and data bus architecture. The S34MS02G100BHB003 uses 8-bit data words with 256 million addresses, while the MT29F2G16ABBEAH4-AAT:E TR uses 16-bit data words with 128 million addresses. Both configurations deliver identical 2Gbit total capacity and are compatible with parallel interface controllers designed for the respective data widths.

Q: Are the package dimensions interchangeable between the 11x9 and 9x11 VFBGA variants?

A: Both parts use the 63-VFBGA package classification with identical ball count and pitch. The dimensional notation (11x9 versus 9x11) reflects orientation perspective but represents the same physical package footprint. PCB layout compatibility is maintained.

Q: What compliance certifications apply to both parts?

A: Both the S34MS02G100BHB003 and MT29F2G16ABBEAH4-AAT:E TR hold AEC-Q100 automotive qualification, ROHS3 compliance, and REACH unaffected status. Both carry MSL rating 3 with 168-hour moisture sensitivity limits.

Q: Why is the substitute part listed as active while the original is discontinued?

A: The S34MS02G100BHB003 has been discontinued at DiGi Electronics, indicating end-of-life status for that specific Cypress product line. The MT29F2G16ABBEAH4-AAT:E TR remains in active production by Micron Technology, providing ongoing availability for new designs and replacement applications.

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