RW1E015RPT2R Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor RW1E015RPT2R is a P-Channel MOSFET transistor categorized under Transistors, FETs, MOSFETs. Key features include a drain-to-source voltage of 30 V, continuous drain current of 1.5A, maximum gate voltage ±20V, and maximum power dissipation of 400mW. The device is provided in a surface mount package (6-WEMT, 6-SMD, Flat Leads). As this model is listed with status “Obsolete,” identification of electrical, mechanical, and regulatory compliant substitutes is necessary to support ongoing manufacturing, repair, and inventory continuity.

Substiute Parts

RW1E015RPT2R
Rohm SemiconductorIn Stock: 96310RW1E015RPT2R Datasheet
RW1E015RPT2R
Current Part
RV4E031RPHZGTCR1
Rohm SemiconductorIn Stock: 6672RV4E031RPHZGTCR1 Datasheet
RV4E031RPHZGTCR1
Similar
RW1E015RPT2R
Rohm SemiconductorIn Stock: 96310RW1E015RPT2R Datasheet
RW1E015RPT2R
Parametric Equivalent
SSM6J207FE,LF
Toshiba Semiconductor and StorageIn Stock: 4970SSM6J207FE,LF Datasheet
SSM6J207FE,LF
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Key Parameters

ParameterRW1E015RPT2R
ManufacturerRohm Semiconductor
CategoryTransistors, FETs, MOSFETs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.2 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V
Power Dissipation (Max)400mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected

Substitute Part Grouping Explanation

Substitute parts are selected based on an exact or close match to the following key parameters: FET type (P-Channel), drain-to-source voltage (30 V), continuous drain current (≥ 1.4A), drive voltage, Rds On, Vgs(th), maximum gate voltage (±20V), power dissipation (400mW or higher), mounting type (surface mount), and supplier regulatory status (RoHS compliant, REACH unaffected, MSL 1). Package type and case outline are also considered to match board-level fit.

Parameter Comparison

Part Number Manufacturer Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package RoHS Status MSL REACH
RW1E015RPT2R Rohm Semiconductor Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 160mOhm @ 1.5A, 10V 2.5V @ 1mA 3.2 nC @ 5 V ±20V 230 pF @ 10 V 400mW (Ta) 150°C (TJ) Surface Mount 6-WEMT ROHS3 Compliant 1 (Unlimited) REACH Unaffected
RV4E031RPHZGTCR1 Rohm Semiconductor Active P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 105mOhm @ 3.1A, 10V 2.5V @ 1mA 4.8 nC @ 5 V ±20V 460 pF @ 10 V 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank DFN1616-6W ROHS3 Compliant 1 (Unlimited) REACH Unaffected
SSM6J207FE,LF Toshiba Semiconductor and Storage Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 251mOhm @ 650mA, 10V 2.6V @ 1mA - ±20V 137 pF @ 15 V 500mW (Ta) 150°C (TJ) Surface Mount ES6 ROHS3 Compliant 1 (Unlimited) -

Engineering Selection Recommendations

When selecting substitutes for the RW1E015RPT2R, only active models should be used for new designs or reorders, aligned with RoHS3 compliance and MSL 1 characteristics. Both RV4E031RPHZGTCR1 and SSM6J207FE,LF meet the environmental, compliance, and mounting requirements. Engineering selection should reference the product status and regulatory certifications presented in the parametric table above.

Frequently Asked Questions (FAQ)

Q1: What parameters are required for substituting RW1E015RPT2R MOSFETs?
A1: Substitute parts must match FET type, technology, drain-to-source voltage (30 V), continuous drain current (≥1.4A), gate threshold voltage, Rds On, gate charge, maximum gate voltage, power dissipation, mounting type, package, and RoHS compliance.

Q2: Are the suggested substitute MOSFET part numbers pin-compatible with RW1E015RPT2R?
A2: Substitute part pin configuration and package equivalency must be verified based on the package field (e.g., 6-WEMT, DFN1616-6W, ES6, SOT-563, SOT-666).

Q3: Why is it necessary to replace RW1E015RPT2R with an alternative?
A3: The part status of RW1E015RPT2R is listed as "Obsolete," thus requiring substitutes for ongoing designs or maintenance.

Q4: What package and mounting considerations apply to these substitutes?
A4: Substitute parts are all surface mount with compatible device package types (6-WEMT, DFN1616-6W, ES6). Consider physical layout and footprint compatibility during selection.

Q5: Is regulatory compliance consistent across suggested substitutes?
A5: All listed substitutes are ROHS3 compliant and, where provided, REACH unaffected, sharing MSL 1 (unlimited) status for consistent handling in manufacturing processes.

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