Request Quote
(Ships tomorrow)
RW1E015RPT2R Equivalent & Substitute Parts Reference
Part Overview
The Rohm Semiconductor RW1E015RPT2R is a P-Channel MOSFET transistor categorized under Transistors, FETs, MOSFETs. Key features include a drain-to-source voltage of 30 V, continuous drain current of 1.5A, maximum gate voltage ±20V, and maximum power dissipation of 400mW. The device is provided in a surface mount package (6-WEMT, 6-SMD, Flat Leads). As this model is listed with status “Obsolete,” identification of electrical, mechanical, and regulatory compliant substitutes is necessary to support ongoing manufacturing, repair, and inventory continuity.
Substiute Parts
Key Parameters
| Parameter | RW1E015RPT2R |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Category | Transistors, FETs, MOSFETs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
| Power Dissipation (Max) | 400mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WEMT |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitute parts are selected based on an exact or close match to the following key parameters: FET type (P-Channel), drain-to-source voltage (30 V), continuous drain current (≥ 1.4A), drive voltage, Rds On, Vgs(th), maximum gate voltage (±20V), power dissipation (400mW or higher), mounting type (surface mount), and supplier regulatory status (RoHS compliant, REACH unaffected, MSL 1). Package type and case outline are also considered to match board-level fit.
Parameter Comparison
| Part Number | Manufacturer | Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | RoHS Status | MSL | REACH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RW1E015RPT2R | Rohm Semiconductor | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 160mOhm @ 1.5A, 10V | 2.5V @ 1mA | 3.2 nC @ 5 V | ±20V | 230 pF @ 10 V | 400mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected |
| RV4E031RPHZGTCR1 | Rohm Semiconductor | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 105mOhm @ 3.1A, 10V | 2.5V @ 1mA | 4.8 nC @ 5 V | ±20V | 460 pF @ 10 V | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN1616-6W | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected |
| SSM6J207FE,LF | Toshiba Semiconductor and Storage | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137 pF @ 15 V | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | ROHS3 Compliant | 1 (Unlimited) | - |
Engineering Selection Recommendations
When selecting substitutes for the RW1E015RPT2R, only active models should be used for new designs or reorders, aligned with RoHS3 compliance and MSL 1 characteristics. Both RV4E031RPHZGTCR1 and SSM6J207FE,LF meet the environmental, compliance, and mounting requirements. Engineering selection should reference the product status and regulatory certifications presented in the parametric table above.
Frequently Asked Questions (FAQ)
Q1: What parameters are required for substituting RW1E015RPT2R MOSFETs?
A1: Substitute parts must match FET type, technology, drain-to-source voltage (30 V), continuous drain current (≥1.4A), gate threshold voltage, Rds On, gate charge, maximum gate voltage, power dissipation, mounting type, package, and RoHS compliance.
Q2: Are the suggested substitute MOSFET part numbers pin-compatible with RW1E015RPT2R?
A2: Substitute part pin configuration and package equivalency must be verified based on the package field (e.g., 6-WEMT, DFN1616-6W, ES6, SOT-563, SOT-666).
Q3: Why is it necessary to replace RW1E015RPT2R with an alternative?
A3: The part status of RW1E015RPT2R is listed as "Obsolete," thus requiring substitutes for ongoing designs or maintenance.
Q4: What package and mounting considerations apply to these substitutes?
A4: Substitute parts are all surface mount with compatible device package types (6-WEMT, DFN1616-6W, ES6). Consider physical layout and footprint compatibility during selection.
Q5: Is regulatory compliance consistent across suggested substitutes?
A5: All listed substitutes are ROHS3 compliant and, where provided, REACH unaffected, sharing MSL 1 (unlimited) status for consistent handling in manufacturing processes.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts

