Equivalent & Substitute Parts Reference for RW1A025APT2CR

Part Overview

The RW1A025APT2CR is a P-Channel MOSFET from Rohm Semiconductor, designed for low-voltage, medium-current surface-mount applications. It has a 12 V drain-to-source voltage rating and a continuous drain current of 2.5A, housed in a 6-SMD package. As the part status is marked “Obsolete,” identifying parametric equivalents and suitable substitutes is necessary for continued production support, design maintenance, and inventory management in the Transistors, FETs, MOSFETs component category.

Key Parameters

Parameter	Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	62mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V
Vgs (Max)	-8V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 6 V
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant
MSL	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute MOSFETs are grouped strictly by matching the following allowed electrical and mechanical parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, on-resistance (Rds On), gate threshold voltage (Vgs(th)), maximum gate charge, maximum gate-source voltage (Vgs (Max)), input capacitance (Ciss), power dissipation, operating temperature, mounting type, RoHS status, MSL, and REACH compliance. Substitute parts meet or exceed the main part’s specifications within these provided criteria and are surface mount devices intended for direct replacement in PCBs.

Parameter Comparison

Parameter	RW1A025APT2CR (Main)	RV5A040APTCR1	SSM6J216FE,LF
FET Type	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V	12 V	12 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)	4A (Ta)	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	1.5V, 4.5V	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	62mOhm @ 2.5A, 4.5V	62mOhm @ 4A, 4.5V	32mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA	1V @ 1mA	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V	16 nC @ 4.5 V	12.7 nC @ 4.5 V
Vgs (Max)	-8V	-8V, 0V	±8V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 6 V	2000 pF @ 6 V	1040 pF @ 12 V
Power Dissipation (Max)	400mW (Ta)	700mW (Ta)	700mW (Ta)
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	Not Specified

Engineering Selection Recommendations

As RW1A025APT2CR is designated obsolete, selection of substitutes must be based on matching part status (preferably active), RoHS3 compliance, and MSL 1 rating for unlimited floor life. RV5A040APTCR1 and SSM6J216FE,LF both provide active status and meet the documented environmental and compliance certifications, ensuring suitability for immediate replacement in applications where RW1A025APT2CR was originally specified.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for selecting an equivalent or substitute MOSFET for RW1A025APT2CR?
A1: The substitute must match the FET type (P-Channel), technology (MOSFET), maximum drain-to-source voltage, continuous drain current, drive voltage, Rds On, gate threshold voltage, gate charge, input capacitance, and mounting type. Compliance with RoHS and MSL 1 is required.

Q2: Are there differences in package or mounting type among substitutes?
A2: All listed substitutes utilize surface-mount packaging compatible with automated assembly processes, with standard SMD package outlines.

Q3: Is environmental and compliance certification required for a substitute?
A3: Yes, all listed substitutes are ROHS3 compliant, with an MSL rating of 1 and documented REACH status, ensuring environmental and legislative compatibility.

Q4: Does substituting a higher Id or lower Rds On MOSFET affect form/fit in a circuit?
A4: Substitutes must match the listed parametric values and mounting type; higher Id or lower Rds On within the stated criteria do not affect the package compatibility.

Q5: Why is substitute selection required for this part number?
A5: RW1A025APT2CR is marked obsolete, necessitating alternatives with matching electrical, thermal, and environmental specifications for ongoing production and support.

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