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Equivalent & Substitute Parts for RTF015P02TL
Part Overview
RTF015P02TL is a P-Channel MOSFET designed for low voltage switching applications, featuring a 20V drain-to-source voltage, 1.5A maximum continuous drain current, and surface mount TUMT3 packaging. The device is currently marked as "Not For New Designs," prompting the need to identify equivalent and substitute MOSFETs for ongoing or future projects within the category of Transistors, FETs, MOSFETs. Substitution ensures continued product support and manufacturability.
Substiute Parts
Key Parameters
| Manufacturer Part Number | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | RoHS Status | MSL | REACH Status | Product Status | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RTF015P02TL | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 135mOhm @ 1.5A, 4.5V | 2V @ 1mA | 5.2 nC @ 4.5 V | ±12V | 560 pF @ 10 V | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs | Cut Tape (CT) & Digi-Reel® |
Substitute Part Grouping Explanation
Substitution is based solely on matching essential electrical and mechanical parameters for P-Channel MOSFETs: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), Vgs(max), gate charge (Qg), input capacitance (Ciss), maximum power dissipation, operating temperature, mounting type, device package, RoHS and REACH compliance, moisture sensitivity level (MSL), and product status. All substitute models in this group share a 20V drain-to-source voltage and P-Channel MOSFET architecture, ensuring direct interchange in compatible applications.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | RoHS Status | MSL | REACH Status | Product Status | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RTF015P02TL | Rohm Semiconductor | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 135mOhm @ 1.5A, 4.5V | 2V @ 1mA | 5.2 nC @ 4.5 V | ±12V | 560 pF @ 10 V | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs | Cut Tape (CT) & Digi-Reel® |
| DMP2240UW-7 | Diodes Incorporated | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 150mOhm @ 2A, 4.5V | 1V @ 250µA | N/A | ±12V | 320 pF @ 16 V | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active | Cut Tape (CT) & Digi-Reel® |
| NTR1P02LT1G | onsemi | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 220mOhm @ 750mA, 4.5V | 1.25V @ 250µA | 5.5 nC @ 4 V | ±12V | 225 pF @ 5 V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active | Cut Tape (CT) & Digi-Reel® |
| PMF170XP,115 | Nexperia USA Inc. | P-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 200mOhm @ 1A, 4.5V | 1.15V @ 250µA | 3.9 nC @ 4.5 V | ±12V | 280 pF @ 10 V | 290mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active | Tape & Reel (TR) |
Engineering Selection Recommendations
All listed substitute MOSFETs (DMP2240UW-7, NTR1P02LT1G, PMF170XP,115) are ROHS3 compliant, REACH unaffected, and feature MSL 1 ratings. These models possess valid product status and comparable electrical characteristics to RTF015P02TL within the transistors, FETs, MOSFETs category. When the main part is "Not For New Designs," selection should prioritize components with "Active" status and equivalent compliance and safety certifications, ensuring direct technical interchangeability per provided parameters.
Frequently Asked Questions (FAQ)
Q: Which parameters are critical for determining MOSFET substitution compatibility?
A: FET type, drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg), maximum power dissipation, operating temperature, mounting type, device package, RoHS/REACH compliance, and product status.
Q: Can these substitute MOSFETs be directly mounted in the same location as RTF015P02TL?
A: Substitution requires matching mechanical mounting and supplier device packages. Review package dimensions and footprints as only surface mount with comparable packages (SOT-323, SOT-23-3, TUMT3) are listed.
Q: Are all substitutes compliant with RoHS and REACH requirements?
A: Yes, all models provided list ROHS3 compliance and REACH unaffected status.
Q: Is the maximum power dissipation identical for all substitutes?
A: No. Verify power dissipation ratings in the context of system thermal design, as substitute models list maximum power dissipation between 250mW and 800mW.
Q: What differences exist among the listed packaging types?
A: Packaging varies between Cut Tape (CT), Digi-Reel®, and Tape & Reel (TR). Select based on manufacturing and inventory integration requirements.
Q: What is the product status and how does it affect selection?
A: "Not For New Designs" indicates the main part is not recommended for new projects; substitutes with "Active" status support ongoing and future designs.
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