RN4990FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4990FE,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component is classified as Active and is RoHS3 compliant. The device is designed for applications requiring integrated bias resistor networks to simplify circuit design and reduce component count. Substitute parts may be required due to inventory constraints, manufacturing discontinuation, or specific application requirements that demand alternative electrical or mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	250, 200	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN4990FE,LF(CT is determined by strict alignment of the following critical parameters:

Mandatory Matching Parameters:

Maximum collector current (Ic): 100mA
Maximum collector-emitter breakdown voltage (Vce): 50V
Base resistor value (R1): 4.7kOhms
Vce saturation maximum: 300mV @ 250µA, 5mA
Surface mount packaging (SOT-563 or SOT-666)
RoHS3 compliance
MSL rating of 1 (Unlimited)

Flexible Parameters (May Vary):

Transistor configuration (1 NPN/1 PNP vs. 2 NPN)
DC current gain (hFE) minimum values
Transition frequency
Maximum power dissipation
Product status (Active vs. Not For New Designs)

The substitute parts listed below meet the mandatory electrical and mechanical requirements for direct functional replacement in applications where the RN4990FE,LF(CT is specified.

Parameter Comparison

Parameter	RN4990FE,LF(CT (Toshiba)	EMH3T2R (Rohm)	PEMD6,115 (Nexperia)
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V
Resistor - Base (R1)	4.7 kOhms	4.7 kOhms	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	100 @ 1mA, 5V	200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300 mV @ 250µA, 5mA	300 mV @ 250µA, 5mA	100 mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100 nA	Not specified	1 µA
Frequency - Transition	250, 200 MHz	250 MHz	Not specified
Power - Max	100 mW	150 mW	300 mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Not For New Designs

Engineering Selection Recommendations

EMH3T2R (Rohm Semiconductor): This substitute is suitable for applications where the dual NPN configuration is acceptable. The EMH3T2R maintains identical maximum collector current (100mA), breakdown voltage (50V), base resistor value (4.7kOhms), and saturation voltage specifications. The device is Active status and RoHS3 compliant. Higher maximum power dissipation (150mW vs. 100mW) provides additional thermal margin. The primary design consideration is the transistor configuration difference: EMH3T2R provides 2 NPN transistors instead of the 1 NPN/1 PNP configuration of the RN4990FE,LF(CT. This substitution is applicable only when the circuit topology does not require a complementary PNP transistor.

PEMD6,115 (Nexperia USA Inc.): This substitute maintains the identical 1 NPN/1 PNP pre-biased dual configuration as the RN4990FE,LF(CT. All critical electrical parameters align: 100mA maximum collector current, 50V breakdown voltage, 4.7kOhms base resistor, and 300mV saturation voltage. The device is RoHS3 compliant with MSL rating of 1. However, PEMD6,115 carries a product status designation of "Not For New Designs," indicating this part is in mature or declining production phase. This substitute is appropriate for legacy system maintenance, field replacements, or applications where existing inventory is available. New design implementations should prioritize the Active status RN4990FE,LF(CT or EMH3T2R.

Frequently Asked Questions (FAQ)

Q: Can EMH3T2R replace RN4990FE,LF(CT in all applications?

A: EMH3T2R is functionally equivalent for electrical performance parameters but provides a different transistor configuration (2 NPN vs. 1 NPN/1 PNP). Substitution is valid only when the circuit design does not require a complementary PNP transistor. Review the schematic to confirm the application topology supports dual NPN operation.

Q: What is the significance of the "Not For New Designs" status on PEMD6,115?

A: This designation indicates the part is in mature production phase with potential future discontinuation. PEMD6,115 is suitable for field replacements, legacy system support, and applications using existing inventory. For new product development, select RN4990FE,LF(CT or EMH3T2R, both carrying Active status.

Q: Are all three parts available in the same package options?

A: Yes. RN4990FE,LF(CT, EMH3T2R, and PEMD6,115 are all available in SOT-563 and SOT-666 surface mount packages. Verify the specific package designation (ES6, EMT6, or SOT-666) matches your PCB footprint and assembly requirements.

Q: How do the DC current gain specifications differ among these parts?

A: RN4990FE,LF(CT specifies minimum hFE of 120 @ 1mA, 5V. EMH3T2R specifies 100 @ 1mA, 5V. PEMD6,115 specifies 200 @ 1mA, 5V. All values exceed typical circuit design requirements for pre-biased transistor applications. Higher hFE values (PEMD6,115) provide improved switching speed and reduced base drive requirements.

Q: What is the difference in saturation voltage performance?

A: RN4990FE,LF(CT and EMH3T2R both specify 300mV maximum saturation voltage @ 250µA, 5mA. PEMD6,115 specifies 100mV maximum saturation voltage under identical conditions. Lower saturation voltage in PEMD6,115 results in reduced power dissipation during transistor saturation, beneficial for high-frequency switching applications.

Q: Are all parts RoHS3 compliant?

A: Yes. RN4990FE,LF(CT, EMH3T2R, and PEMD6,115 are all RoHS3 compliant with MSL rating of 1 (Unlimited moisture sensitivity level). All parts meet environmental and regulatory requirements for commercial and industrial applications.

Q: What is the maximum power dissipation difference, and does it matter for my application?

A: RN4990FE,LF(CT is rated 100mW maximum. EMH3T2R is rated 150mW maximum. PEMD6,115 is rated 300mW maximum. The difference becomes significant in high-frequency switching or high-current applications. If your circuit operates near the 100mW limit, EMH3T2R or PEMD6,115 provide additional thermal headroom.

Q: Can I use these parts interchangeably on the same PCB?

A: All three parts use identical SOT-563 or SOT-666 packages and are pin-compatible. However, circuit-level compatibility depends on the specific application topology. EMH3T2R substitution requires confirmation that dual NPN configuration is acceptable. PEMD6,115 substitution is valid but should be limited to non-new-design applications due to product status.

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