RN2118MFV(TPL3) Equivalent & Substitute Parts

Part Overview

The RN2118MFV(TPL3) is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V maximum collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The part is housed in a SOT-723 package (VESM supplier designation) and is classified as Active product status with RoHS compliance.

Pre-biased transistors integrate internal base resistors to simplify circuit design and reduce component count. The RN2118MFV(TPL3) includes a 47 kOhm base resistor (R1) and 10 kOhm emitter-base resistor (R2), enabling direct logic-level switching applications without external biasing networks.

Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence for direct circuit replacement.

Substiute Parts

RN2118MFV(TPL3)
Toshiba Semiconductor and StorageIn Stock: 4080RN2118MFV(TPL3) Datasheet
RN2118MFV(TPL3)
Current Part
RN2318(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4226RN2318(TE85L,F) Datasheet
RN2318(TE85L,F)
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DTA144TM3T5G
onsemiIn Stock: 1178DTA144TM3T5G Datasheet
DTA144TM3T5G
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DTA144TMT2L
Rohm SemiconductorIn Stock: 9224DTA144TMT2L Datasheet
DTA144TMT2L
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DTA144WM3T5G
onsemiIn Stock: 17455DTA144WM3T5G Datasheet
DTA144WM3T5G
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NSBA144TF3T5G
onsemiIn Stock: 900NSBA144TF3T5G Datasheet
NSBA144TF3T5G
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Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500 nA
Power - Max 150 mW
Package / Case SOT-723
Mounting Type Surface Mount
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the RN2118MFV(TPL3) are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

  • Transistor Type: PNP - Pre-Biased
  • Maximum Collector Current: 100 mA
  • Maximum Collector-Emitter Breakdown Voltage: 50 V
  • Base Resistor (R1): 47 kOhms
  • Maximum Collector Cutoff Current: 500 nA
  • Surface Mount Mounting Type
  • Active Product Status

Secondary Compatibility Factors:

  • Package form factor (SOT-723, SC-70, SOT-1123)
  • Vce saturation voltage characteristics
  • DC current gain (hFE) specifications
  • Power dissipation capability
  • RoHS and compliance certifications

The identified substitute parts maintain electrical equivalence within the specified parameter ranges and are suitable for direct replacement in applications requiring pre-biased PNP switching functionality at 50 V and 100 mA ratings.

Parameter Comparison

Parameter RN2118MFV(TPL3) RN2318(TE85L,F) DTA144TM3T5G DTA144TMT2L DTA144WM3T5G NSBA144TF3T5G
Manufacturer Toshiba Toshiba onsemi Rohm onsemi onsemi
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Ic (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Vce Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
R1 (Base Resistor) 47 kOhms 47 kOhms 47 kOhms 47 kOhms 47 kOhms 47 kOhms
R2 (Emitter-Base Resistor) 10 kOhms 10 kOhms 22 kOhms
hFE (Min) @ Ic, Vce 50 @ 10mA, 5V 50 @ 10mA, 5V 120 @ 5mA, 10V 100 @ 1mA, 5V 80 @ 5mA, 10V 120 @ 5mA, 10V
Vce Saturation (Max) 300 mV @ 500µA, 5mA 300 mV @ 250µA, 5mA 250 mV @ 1mA, 10mA 300 mV @ 500µA, 5mA 250 mV @ 300µA, 10mA 250 mV @ 1mA, 10mA
Icbo (Max) 500 nA 500 nA 500 nA 500 nA 500 nA 500 nA
Power (Max) 150 mW 100 mW 260 mW 150 mW 260 mW 254 mW
Package / Case SOT-723 SC-70 / SOT-323 SOT-723 SOT-723 SOT-723 SOT-1123
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

RN2318(TE85L,F) - Toshiba Semiconductor

The RN2318(TE85L,F) is a direct functional equivalent with identical base and emitter-base resistor values (47 kOhms and 10 kOhms). This part maintains the same DC current gain specification and Vce saturation characteristics. The primary difference is package form factor (SC-70 / SOT-323 versus SOT-723) and reduced maximum power rating (100 mW versus 150 mW). Selection of this part requires PCB layout compatibility with SC-70 package dimensions. ROHS3 compliance status is equivalent to the main part.

DTA144TM3T5G - onsemi

The DTA144TM3T5G operates within the same electrical envelope with 50 V breakdown voltage and 100 mA collector current. This part features higher DC current gain (120 @ 5mA, 10V) and improved Vce saturation (250 mV). The SOT-723 package matches the main part footprint. Maximum power dissipation is 260 mW, providing additional thermal margin. ROHS3 compliance and REACH Unaffected status are provided. The emitter-base resistor value is not specified in available data.

DTA144TMT2L - Rohm Semiconductor

The DTA144TMT2L maintains identical base resistor value (47 kOhms) and equivalent Vce saturation specification (300 mV @ 500µA, 5mA). DC current gain is 100 @ 1mA, 5V. The SOT-723 package provides direct footprint compatibility. Maximum power rating is 150 mW, matching the main part. ROHS3 compliance and REACH Unaffected status are confirmed. Transition frequency specification (250 MHz) is provided.

DTA144WM3T5G - onsemi

The DTA144WM3T5G is qualified for SOT-723 package compatibility with the main part. This part features 47 kOhms base resistor and 22 kOhms emitter-base resistor (versus 10 kOhms in the main part). DC current gain is 80 @ 5mA, 10V with improved Vce saturation (250 mV). Maximum power dissipation is 260 mW. ROHS3 compliance and REACH Unaffected status are provided. The different emitter-base resistor value affects switching speed characteristics.

NSBA144TF3T5G - onsemi

The NSBA144TF3T5G maintains 47 kOhms base resistor with 50 V breakdown voltage and 100 mA collector current. DC current gain is 120 @ 5mA, 10V with 250 mV Vce saturation. The SOT-1123 package differs from the main part SOT-723 form factor, requiring PCB layout verification. Maximum power dissipation is 254 mW. ROHS3 compliance and REACH Unaffected status are confirmed.

All substitute parts maintain Active product status and MSL 1 (Unlimited) moisture sensitivity classification, ensuring equivalent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can RN2318(TE85L,F) replace RN2118MFV(TPL3) in all applications?

A: The RN2318(TE85L,F) is electrically equivalent with matching base and emitter-base resistor values. However, the SC-70 / SOT-323 package differs from the SOT-723 package of the main part. PCB layout and land pattern compatibility must be verified before substitution. The reduced maximum power rating (100 mW versus 150 mW) requires thermal analysis for high-current applications.

Q: What is the significance of the emitter-base resistor (R2) difference between parts?

A: The emitter-base resistor affects switching speed and turn-off characteristics. The main part and most substitutes specify 10 kOhms. The DTA144WM3T5G specifies 22 kOhms, which increases turn-off time. Applications requiring specific switching speed performance must account for this parameter difference.

Q: Are all substitute parts RoHS compliant?

A: The main part RN2118MFV(TPL3) is RoHS Compliant. All identified substitute parts are ROHS3 Compliant, which represents an updated RoHS standard. Both compliance levels are acceptable for RoHS-regulated applications.

Q: Which substitute part offers the best thermal performance?

A: The DTA144TM3T5G, DTA144WM3T5G, and NSBA144TF3T5G offer maximum power dissipation ratings of 260 mW, 260 mW, and 254 mW respectively, compared to 150 mW for the main part. These parts provide additional thermal margin for high-current or high-frequency switching applications.

Q: Can NSBA144TF3T5G be used as a direct footprint replacement?

A: The NSBA144TF3T5G uses SOT-1123 package, which differs from the SOT-723 package of the main part. Direct footprint replacement is not possible without PCB redesign. Package dimensions and pin assignments must be verified against design requirements.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape and Tape & Reel represent different supply formats for surface mount components. Cut Tape is supplied in individual strips, while Tape & Reel is supplied on continuous reels for automated assembly. Electrical and functional specifications are identical; packaging format selection depends on assembly process requirements and order quantities.

Q: Are all substitute parts suitable for high-frequency switching applications?

A: The DTA144TMT2L specifies transition frequency of 250 MHz, and the RN2318(TE85L,F) specifies 200 MHz. The main part RN2118MFV(TPL3) does not specify transition frequency. Applications requiring specific frequency performance must reference the transition frequency specification of the selected substitute part.

Q: What is MSL 1 (Unlimited) moisture sensitivity classification?

A: MSL 1 (Unlimited) indicates the component has unlimited shelf life under normal storage conditions without requiring special moisture control or baking procedures prior to assembly. All identified parts maintain this classification, ensuring equivalent handling requirements.

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