RM25C32DS-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM25C32DS-LSNI-B is a CBRAM Memory IC manufactured by Renesas Electronics Corporation, featuring 32Kbit capacity with SPI interface operating at 20 MHz. This component is classified as Obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and new design implementations. The part is housed in an 8-SOIC package and operates across a supply voltage range of 1.65V to 3.6V with temperature range of -40°C to 85°C.

Key Parameters

Parameter	Value
Memory Type	Non-Volatile
Memory Size	32Kbit
Memory Interface	SPI
Clock Frequency	20 MHz
Package / Case	8-SOIC (0.154", 3.90mm Width)
Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the RM25C32DS-LSNI-B are identified based on the following critical parameters that determine functional compatibility:

Memory Size: 32Kbit capacity
Memory Interface: SPI protocol
Clock Frequency: 20 MHz operation
Package / Case: 8-SOIC form factor
Mounting Type: Surface Mount
Operating Temperature Range: -40°C to 85°C
Non-Volatile Memory Type

The substitute parts M95320-DFMN6TP and M95320-WMN6P from STMicroelectronics meet these core electrical and mechanical requirements. Both parts utilize EEPROM technology instead of CBRAM, but maintain identical memory capacity, interface protocol, clock frequency, package configuration, and operating temperature specifications. The voltage supply range differs between the main part and substitutes, requiring verification within the specific application circuit.

Parameter Comparison

Parameter	RM25C32DS-LSNI-B	M95320-DFMN6TP	M95320-WMN6P
Manufacturer	Renesas Electronics Corporation	STMicroelectronics	STMicroelectronics
Memory Type	Non-Volatile	Non-Volatile	Non-Volatile
Memory Format	CBRAM®	EEPROM	EEPROM
Memory Size	32Kbit	32Kbit	32Kbit
Memory Interface	SPI	SPI	SPI
Clock Frequency	20 MHz	20 MHz	20 MHz
Write Cycle Time - Page	2.5ms	5ms	5ms
Voltage - Supply	1.65V ~ 3.6V	1.7V ~ 5.5V	2.5V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Packaging Option	-	Cut Tape (CT) & Digi-Reel®	Tube

Engineering Selection Recommendations

Both M95320-DFMN6TP and M95320-WMN6P are Active status components from STMicroelectronics, providing long-term availability and supply chain stability compared to the Obsolete RM25C32DS-LSNI-B. Both substitute parts maintain ROHS3 compliance and identical operating temperature specifications.

M95320-DFMN6TP is supplied in Cut Tape (CT) and Digi-Reel® packaging, suitable for automated assembly processes. M95320-WMN6P is supplied in Tube packaging and carries DiGi-Electronics Programmable verification status.

The voltage supply range for M95320-DFMN6TP (1.7V ~ 5.5V) provides broader compatibility with the original part's 1.65V minimum specification. M95320-WMN6P operates from 2.5V ~ 5.5V, which may require circuit evaluation if the application requires operation below 2.5V supply voltage.

Page write cycle time for both substitute parts is 5ms compared to 2.5ms for the original part, representing a performance difference that must be evaluated within the specific application timing requirements.

Frequently Asked Questions (FAQ)

Q: Can M95320-DFMN6TP and M95320-WMN6P be used interchangeably with RM25C32DS-LSNI-B?

A: Both parts share identical memory capacity (32Kbit), SPI interface, 20 MHz clock frequency, 8-SOIC package, and operating temperature range. Substitution is mechanically and electrically compatible at the package and interface level. Circuit-level evaluation is required for voltage supply range and write cycle time differences.

Q: What is the primary difference between CBRAM and EEPROM memory technologies in this application?

A: Both are non-volatile memory types with identical capacity and interface specifications for this product category. The technology difference does not affect pin compatibility or SPI protocol operation.

Q: Are there packaging considerations when switching from RM25C32DS-LSNI-B to the substitute parts?

A: Both substitute parts maintain the 8-SOIC (0.154", 3.90mm Width) package form factor. M95320-DFMN6TP is available in Cut Tape and Digi-Reel® formats for automated assembly. M95320-WMN6P is supplied in Tube packaging. PCB layout and assembly process compatibility should be confirmed based on existing manufacturing procedures.

Q: What voltage supply range should be used when substituting these parts?

A: The original RM25C32DS-LSNI-B operates from 1.65V to 3.6V. M95320-DFMN6TP supports 1.7V to 5.5V, and M95320-WMN6P supports 2.5V to 5.5V. If the application operates below 2.5V, M95320-DFMN6TP is the appropriate selection. Circuit design must remain within the overlapping voltage range of the original specification and selected substitute.

Q: How does the write cycle time difference affect system performance?

A: The original part specifies 2.5ms page write cycle time, while both substitute parts specify 5ms. Applications with time-critical write operations must evaluate whether the doubled write cycle time impacts system timing requirements or data throughput specifications.

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