RM24C64C-LTAI-B Equivalent & Substitute Parts

Part Overview

The RM24C64C-LTAI-B is a 64Kbit CBRAM (Conductive Bridging RAM) non-volatile memory IC manufactured by Renesas Electronics Corporation. This device features an I2C interface operating at 1 MHz and is packaged in an 8-TSSOP form factor. The product is currently classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and new design implementations.

Substiute Parts

RM24C64C-LTAI-B

Renesas Electronics CorporationIn Stock: 1012RM24C64C-LTAI-B Datasheet

Current PartRFQ

24CW640T-I/ST

Microchip TechnologyIn Stock: 355724CW640T-I/ST Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RM24C64C-LTAI-B is determined by the following critical parameters:

• Memory Capacity: 64Kbit capacity requirement
• Memory Interface: I2C protocol compatibility
• Clock Frequency: 1 MHz operation
• Package Type: 8-TSSOP physical form factor
• Supply Voltage Range: Operating voltage compatibility
• Operating Temperature Range: -40°C to 85°C thermal envelope
• Non-Volatile Storage: Persistent data retention requirement

The 24CW640T-I/ST from Microchip Technology meets these substitution criteria. While the RM24C64C-LTAI-B uses CBRAM technology and the 24CW640T-I/ST uses EEPROM technology, both devices provide equivalent functional performance for I2C-based 64Kbit non-volatile memory applications within the specified electrical and thermal parameters.

Parameter Comparison

Engineering Selection Recommendations

The 24CW640T-I/ST is a direct functional substitute for the obsolete RM24C64C-LTAI-B. Both devices are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The Microchip device is currently in active production status with substantial inventory availability (3452 pcs), whereas the Renesas part is obsolete.

The 24CW640T-I/ST operates within an extended supply voltage range (1.6V ~ 5.5V) compared to the original part (1.65V ~ 3.6V), providing greater design flexibility. Both devices maintain identical I2C interface specifications, clock frequency, package geometry, and thermal operating range. The primary technical difference is the memory technology: CBRAM versus EEPROM. This distinction does not affect functional compatibility for standard I2C memory applications.

Frequently Asked Questions (FAQ)

Q: Can the 24CW640T-I/ST directly replace the RM24C64C-LTAI-B without PCB modifications?

A: Yes. Both devices use identical 8-TSSOP packaging with matching pinout and electrical interface specifications. No PCB layout changes are required.

Q: What is the difference between CBRAM and EEPROM technology in this application?

A: Both technologies provide non-volatile memory storage with I2C interface compatibility. CBRAM and EEPROM differ in internal operation and write cycle characteristics, but both meet the functional requirements for 64Kbit I2C memory applications.

Q: Is the extended voltage range of the 24CW640T-I/ST (1.6V ~ 5.5V) a concern?

A: No. The extended range is a design advantage. Systems designed for the original 1.65V ~ 3.6V specification operate within the 24CW640T-I/ST voltage envelope without modification.

Q: Are there any compliance or certification differences?

A: Both devices are ROHS3 compliant, REACH unaffected, and carry identical regulatory classifications (ECCN: EAR99). No compliance issues exist for substitution.

Q: What is the inventory status for each part?

A: The RM24C64C-LTAI-B is obsolete with limited availability. The 24CW640T-I/ST is in active production with 3452 pcs currently in stock.