Equivalent & Substitute Parts for R6015ENX MOSFET

Part Overview

R6015ENX is an N-channel power MOSFET manufactured by Rohm Semiconductor. It features a drain-to-source voltage of 600 V, a continuous drain current of 15 A (Tc), and is housed in through-hole TO-220FM packaging. The product is active and stocked in significant quantities. Alternative models are necessary in cases involving supply chain constraints, cross-referencing for design flexibility, or multi-sourcing requirements, provided strict adherence to published electrical and mechanical parameters.

Key Parameters

Parameter	R6015ENX
Manufacturer	Rohm Semiconductor
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	910 pF @ 25 V
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Product Status	Active

Substitute Part Grouping Explanation

Substitute models are selected using direct comparison of the following primary parameters: FET type, technology (MOSFET), drain-to-source voltage (Vdss), continuous drain current (Id), gate drive voltage, Rds(on), gate threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs), gate charge (Qg), input capacitance (Ciss), maximum power dissipation, operating temperature, mounting type, and package type. Only N-channel MOSFETs with matching or higher voltage and current ratings and compatible packaging are considered. Compliance with RoHS and REACH, as well as active product status, is verified for all equivalents.

Parameter Comparison

Parameter	R6015ENX Rohm Semiconductor	IPA60R230P6XKSA1 Infineon Technologies	IPAN80R280P7XKSA1 Infineon Technologies	TK17A80W,S4X Toshiba Semiconductor and Storage
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	800 V	800 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)	16.8A (Tc)	17A (Tc)	17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 6.5A, 10V	230mOhm @ 6.4A, 10V	280mOhm @ 7.2A, 10V	290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA	4.5V @ 530µA	3.5V @ 360µA	4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V	31 nC @ 10 V	36 nC @ 10 V	32 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max)	910 pF @ 25 V	1450 pF @ 100 V	1200 pF @ 500 V	2050 pF @ 300 V
Power Dissipation (Max)	40W (Tc)	33W (Tc)	30W (Tc)	45W (Tc)
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute MOSFETs are active, ROHS3 compliant, and have Moisture Sensitivity Level 1 (Unlimited). These substitutes possess compatible electrical ratings, mechanical formats, and certifications in accordance with the provided parameters. REACH status is declared for parts where data is provided. Selection must be conducted strictly on the basis of consistency among product status, compliance, and certifications.

Frequently Asked Questions (FAQ)

Q: What are the primary criteria for selecting substitute MOSFETs?
A: FET type, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), packaging type, mounting type, compliance, and product status.

Q: Are package formats directly compatible?
A: All referenced parts utilize TO-220-3 Full Pack or equivalent through-hole packages per input parameters.

Q: Are RoHS and REACH compliance guaranteed for these alternatives?
A: All parts are listed as ROHS3 compliant. REACH unaffected status is declared for R6015ENX and Infineon alternatives. MSL 1 applies to all parts.

Q: Can these substitute parts be used in designs specifying the original model number?
A: Substitution can be performed using only the input parameters related to electrical ratings, package type, and compliance status. This ensures direct compatibility within the specified product category.

Q: Is product status a limiting factor for these alternatives?
A: Yes. Only parts listed as "Active" are included, assuring ongoing manufacturer production and availability.

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