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Equivalent & Substitute Parts Reference for R5016FNX
Part Overview
The Rohm Semiconductor R5016FNX is an N-channel MOSFET classified under Transistors, FETs, MOSFETs. It features a drain-source voltage (Vdss) of 500 V, continuous drain current of 16A (Tc), 50W power dissipation (Tc), and is packaged in a TO-220FM through-hole case. This product is currently active and ROHS3 compliant. Identifying substitute and equivalent models is essential to ensure uninterrupted design, repair, and inventory planning in case of supply chain constraints or specific design requirements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | R5016FNX |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 325mOhm @ 8A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitutes for R5016FNX are selected strictly according to matching or compatible key electrical and mechanical parameters. The principal parameters include: device category (Transistors, FETs, MOSFETs), FET type (N-Channel), technology (MOSFET Metal Oxide), drain to source voltage (Vdss), continuous drain current (Id) @ 25°C, maximum Rds On value, package/case format, power dissipation, gate threshold voltage, input capacitance, gate charge, maximum Vgs, mounting type, operating temperature, and RoHS compliance status. Substitution is constrained to those models whose datasheet equivalents strictly conform to these characteristics as provided.
Parameter Comparison
| Manufacturer Part Number | Category | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| R5016FNX | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 325mOhm @ 8A, 10V | 5V @ 1mA | 46 nC @ 10 V | ±30V | 1700 pF @ 25 V | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| R6018JNXC7G | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 286mOhm @ 9A, 15V | 7V @ 4.2mA | 42 nC @ 15 V | ±30V | 1300 pF @ 100 V | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| STF19NM50N | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 250mOhm @ 7A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 1000 pF @ 50 V | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| TK18A50D(STA4,Q,M) | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Ta) | 270mOhm @ 9A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| STF12N50M2 | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 380mOhm @ 5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 560 pF @ 100 V | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| STF14NM50N | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 320mOhm @ 6A, 10V | 4V @ 100µA | 27 nC @ 10 V | ±25V | 816 pF @ 50 V | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| STP12NM50FP | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 350mOhm @ 6A, 10V | 5V @ 50µA | 39 nC @ 10 V | ±30V | 1000 pF @ 25 V | 35W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| STP14NK50ZFP | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2000 pF @ 25 V | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| TK13A50D(STA4,Q,M) | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Ta) | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| TK14A55D(STA4,Q,M) | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 550 V | 14A (Ta) | 370mOhm @ 7A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
| TK15A50D(STA4,Q,M) | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Ta) | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ROHS3 Compliant |
Engineering Selection Recommendations
All listed substitute and equivalent MOSFETs for R5016FNX are classified as active product status and are ROHS3 compliant, ensuring regulatory compatibility. Each device is supplied in through-hole TO-220 type packages for mechanical interchangeability. RoHS compliance and active inventory status support selection for direct procurement based on environmental and lifecycle requirements.
Frequently Asked Questions (FAQ)
Q: What are the primary criteria for substituting R5016FNX?
A: Substitution is based entirely on electrical parameters (Drain to Source Voltage, Continuous Drain Current, Rds On, Gate Threshold Voltage, Gate Charge, Input Capacitance), package/case (TO-220-3 Full Pack or equivalent), mounting type (Through Hole), power dissipation, operating temperature, and compliance status (ROHS3).
Q: Can different manufacturers' MOSFETs be substituted directly?
A: Substitute models from Rohm Semiconductor, STMicroelectronics, and Toshiba Semiconductor and Storage are listed. Parts matching key parameters and package formats may be considered equivalents within the MOSFET product category.
Q: How does the package format affect interchangeability?
A: Only devices in TO-220-3 Full Pack or manufacturer-equivalent through-hole packages are listed, ensuring mechanical compatibility in designs intended for R5016FNX.
Q: Are there differences in gate charge or input capacitance?
A: Substitute devices vary in gate charge and input capacitance as indicated in the comparison table. Selections must reference these specified characteristics according to the application's requirements.
Q: Are all listed substitutes RoHS compliant and active?
A: All substitutes are specified as ROHS3 compliant and active per the data provided.
Q: What does 'active' status indicate for these parts?
A: 'Active' product status means the part is currently in production and available for procurement according to supplied inventory information.
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