PEMD3,115 Equivalent & Substitute Parts

Part Overview

The PEMD3,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal biasing resistors (10kΩ base and 10kΩ emitter-base) to simplify circuit design in switching and logic applications. The part is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PEMD3,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this model. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active product support and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Collector Current (Max)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	10	kΩ
Emitter-Base Resistor (R2)	10	kΩ
DC Current Gain (hFE Min)	30	@ 5mA, 5V
Vce Saturation (Max)	150	mV @ 500µA, 10mA
Power Dissipation (Max)	300	mW
Package	SOT-666	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD3,115 is determined by the following critical parameters:

Transistor Configuration: The part must contain 1 NPN and 1 PNP transistor pair in a single package (dual pre-biased configuration). This eliminates parts with different transistor counts (such as 2 NPN only configurations).

Electrical Ratings: Substitute parts must meet or exceed the following minimum specifications:

Collector current: 100mA
Collector-emitter breakdown voltage: 50V
Base resistor (R1): 10kΩ
Emitter-base resistor (R2): 10kΩ (or compatible value for circuit operation)

Package Compatibility: The PEMD3,115 is supplied in SOT-666 packaging. Substitute parts must be available in SOT-563 or SOT-666 packages to ensure mechanical and electrical compatibility with existing PCB layouts.

Product Status: Active or obsolete parts are acceptable for substitution. Parts marked "Not For New Designs" should be replaced with active alternatives where possible.

Compliance: All substitute parts must maintain ROHS3 compliance and MSL 1 rating to ensure environmental and handling compatibility.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kΩ	R2 (E-B) kΩ	hFE Min @ Ic, Vce	Vce Sat (Max) mV	Power (Max) mW	Package	Status
PEMD3,115	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	300	SOT-666	Not For New Designs
NSBC114EPDXV6T1G	onsemi	1 NPN, 1 PNP	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Active
DCX114TH-7	Diodes Incorporated	1 NPN, 1 PNP	100	50	10	—	100 @ 1mA, 5V	300 @ 100µA, 1mA	150	SOT-563	Active
NSBC114YPDXV6T1G	onsemi	1 NPN, 1 PNP	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Active
NSBC114YPDXV6T5G	onsemi	1 NPN, 1 PNP	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Obsolete
RN4982FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	10	50 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active
RN4987FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active
RN4902FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	10	50 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active

Engineering Selection Recommendations

Primary Recommendation: NSBC114EPDXV6T1G (onsemi)

The NSBC114EPDXV6T1G is the most direct functional equivalent to the PEMD3,115. Both parts share identical transistor configuration (1 NPN, 1 PNP), collector current rating (100mA), breakdown voltage (50V), and base resistor value (10kΩ). The NSBC114EPDXV6T1G maintains ROHS3 compliance and MSL 1 rating. The part carries Active product status, ensuring continued manufacturing support and availability. The primary difference is packaging: NSBC114EPDXV6T1G uses SOT-563 instead of SOT-666. Both packages are surface mount and mechanically compatible with standard PCB assembly processes. Higher power dissipation (500mW vs. 300mW) provides additional thermal margin.

Secondary Recommendation: RN4982FE,LF(CT (Toshiba Semiconductor and Storage)

The RN4982FE,LF(CT provides electrical equivalence with identical transistor configuration, current rating, and breakdown voltage. Base and emitter-base resistor values match the PEMD3,115 specification (10kΩ each). The part is Active and ROHS3 compliant. The ES6 package differs from SOT-666, requiring PCB layout verification. Power dissipation is lower (100mW), which may limit thermal performance in high-power applications but is acceptable for standard switching circuits.

Alternative: NSBC114YPDXV6T1G (onsemi)

The NSBC114YPDXV6T1G offers Active product status and higher power rating (500mW). The emitter-base resistor differs (47kΩ vs. 10kΩ), which affects circuit biasing characteristics. This part is suitable for applications where the modified biasing network is acceptable. The part is available in high inventory quantities.

Not Recommended: DCX114TH-7 (Diodes Incorporated)

While DCX114TH-7 is Active and meets electrical ratings, the emitter-base resistor value is not specified in the provided data. Additionally, the power dissipation (150mW) is lower than the PEMD3,115, potentially limiting thermal performance in demanding applications.

Not Recommended: NSBC114YPDXV6T5G (onsemi)

This part carries Obsolete product status, making it unsuitable for new designs or long-term supply chain planning despite technical compatibility.

Frequently Asked Questions (FAQ)

Q: Can I directly replace PEMD3,115 with NSBC114EPDXV6T1G without circuit modification?

A: The NSBC114EPDXV6T1G is electrically equivalent in all critical parameters (transistor type, current rating, voltage rating, and resistor values). The primary difference is packaging (SOT-563 vs. SOT-666). PCB layout must be verified to ensure the SOT-563 footprint is compatible with the existing design. If the PCB is designed for SOT-666, a new layout is required.

Q: What is the difference between SOT-563 and SOT-666 packages?

A: Both are surface mount packages for dual pre-biased transistors. SOT-666 is a 6-pin package, while SOT-563 is also a 6-pin package but with different physical dimensions and pin spacing. The electrical function is identical, but PCB footprints are not interchangeable. Verify footprint compatibility before substitution.

Q: Why do some substitute parts have different emitter-base resistor values (47kΩ vs. 10kΩ)?

A: The emitter-base resistor (R2) affects the biasing network and switching characteristics of the pre-biased transistor. Parts with 47kΩ (such as NSBC114YPDXV6T1G) have different turn-on and turn-off behavior compared to 10kΩ versions. Select substitutes based on your circuit's biasing requirements. If the original design depends on 10kΩ biasing, use parts with matching R2 values.

Q: Is RN4982FE,LF(CT compatible with my existing PCB designed for SOT-666?

A: No. RN4982FE,LF(CT uses ES6 packaging, which has different physical dimensions and pin spacing than SOT-666. A new PCB layout is required. However, the electrical function is equivalent, making it suitable for new designs or redesigned boards.

Q: What does "Not For New Designs" status mean for PEMD3,115?

A: This status indicates that Nexperia has discontinued active development and support for the PEMD3,115. The part may still be available from inventory, but long-term supply is not guaranteed. For new designs or production runs, select an Active substitute such as NSBC114EPDXV6T1G or RN4982FE,LF(CT.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and maintain MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance of the PEMD3,115.

Q: Which substitute offers the best thermal performance?

A: NSBC114EPDXV6T1G and NSBC114YPDXV6T1G both offer 500mW power dissipation, compared to 300mW for the PEMD3,115. These parts provide superior thermal margin. RN4982FE,LF(CT, RN4987FE,LF(CT, and RN4902FE,LF(CT are rated at 100mW, which is lower than the original part.

Q: Can I use DCX114TH-7 as a substitute?

A: DCX114TH-7 meets the core electrical requirements (100mA, 50V, 1 NPN/1 PNP configuration) and is Active. However, the emitter-base resistor value is not specified in the available data, and power dissipation (150mW) is lower than the PEMD3,115. Verify circuit compatibility before selection.

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