PEMD18,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD18,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal base resistors (R1: 4.7kOhms, R2: 10kOhms) for simplified circuit design and reduced component count in switching applications. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PEMD18,115 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance and production requirements.

Substiute Parts

PEMD18,115

Nexperia USA Inc.In Stock: 5165PEMD18,115 Datasheet

Current PartRFQ

EMD5DXV6T5G

onsemiIn Stock: 1257EMD5DXV6T5G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMD18,115 is determined by strict equivalence across the following critical parameters:

Functional Requirements:

• Dual pre-biased transistor configuration (1 NPN, 1 PNP)
• Internal base resistor network (R1 and R2 values)
• Maximum collector current: 100mA
• Maximum collector-emitter breakdown voltage: 50V
• Maximum power dissipation: 300mW or greater

Electrical Compatibility:

• DC current gain (hFE) characteristics
• Saturation voltage performance
• Collector cutoff current specifications

Physical & Compliance Requirements:

• Surface mount packaging (SOT-563 or SOT-666)
• RoHS3 compliance
• MSL rating of 1 (Unlimited)

The EMD5DXV6T5G manufactured by onsemi meets these substitution criteria. This part maintains identical maximum ratings for collector current (100mA) and collector-emitter breakdown voltage (50V), while offering increased power dissipation (500mW versus 300mW). The internal resistor network includes the required 4.7kOhms base resistor option and 10kOhms emitter-base resistor option. Both devices are RoHS3 compliant with MSL rating 1 and are available in compatible surface mount packages.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: EMD5DXV6T5G

The EMD5DXV6T5G is the qualified substitute for the PEMD18,115 based on functional equivalence and compliance alignment. Both devices are RoHS3 compliant and carry MSL rating 1 (Unlimited), ensuring compatibility with standard manufacturing and storage protocols.

Electrical Performance Considerations:

The EMD5DXV6T5G provides enhanced power dissipation capability (500mW versus 300mW), which offers design margin in thermal-constrained applications. The substitute part maintains the critical 50V collector-emitter breakdown voltage and 100mA maximum collector current ratings required for functional equivalence.

The EMD5DXV6T5G offers internal resistor network options including the 4.7kOhms / 10kOhms configuration that directly matches the PEMD18,115 specification. This ensures pin-compatible operation without external circuit modification.

Package Consideration:

The PEMD18,115 is supplied in SOT-666 packaging, while the EMD5DXV6T5G is supplied in SOT-563 packaging. Both are surface mount packages with compatible pinout for dual pre-biased transistor configurations. PCB layout and footprint adjustments are required when transitioning between these package types.

Obsolescence Status:

Both the PEMD18,115 and EMD5DXV6T5G are classified as obsolete. Current inventory availability should be verified through authorized distributors prior to design commitment or production planning.

Frequently Asked Questions (FAQ)

Q: Can the EMD5DXV6T5G directly replace the PEMD18,115 without circuit modification?

A: The EMD5DXV6T5G is functionally equivalent when configured with the 4.7kOhms base resistor and 10kOhms emitter-base resistor network. However, the package transition from SOT-666 to SOT-563 requires PCB footprint redesign. Electrical performance is compatible within the specified operating parameters.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Package type (SOT-666 versus SOT-563), (2) Power dissipation rating (300mW versus 500mW), (3) Saturation voltage specification (100mV versus 250mV at different test conditions), and (4) Collector cutoff current (1µA versus 0.5µA). The EMD5DXV6T5G offers improved thermal performance and lower leakage current.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the PEMD18,115 and EMD5DXV6T5G are RoHS3 compliant with MSL rating 1 (Unlimited), meeting standard environmental and regulatory requirements for surface mount assembly.

Q: What is the significance of the internal resistor network options in the EMD5DXV6T5G?

A: The EMD5DXV6T5G is available with multiple internal resistor configurations (4.7kOhms/10kOhms or 47kOhms/47kOhms). The 4.7kOhms/10kOhms variant provides direct electrical equivalence to the PEMD18,115. Selection of the correct resistor configuration is critical for circuit performance.

Q: Can these parts be used interchangeably in legacy designs?

A: Electrical substitution is possible with the EMD5DXV6T5G when the correct resistor network is selected. However, physical substitution requires PCB redesign due to package differences. Design validation is necessary to confirm performance in the specific application circuit.

Q: What should be considered when sourcing these obsolete parts?

A: Both parts are obsolete and subject to limited availability. Inventory verification through authorized distributors is required. Long-term supply planning should consider design migration to current-generation pre-biased transistor alternatives if production volumes or timelines extend beyond available stock levels.