PEMB11,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB11,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PEMB11,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives from active product lines to ensure design continuity and long-term supply chain reliability.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1	µA
Frequency - Transition	180	MHz
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PEMB11,115 is determined by the following critical parameters:

Primary Matching Criteria:

Transistor configuration: 2 PNP - Pre-Biased (Dual)
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor (R1): 10kOhms
Surface mount packaging compatibility

Secondary Compatibility Factors:

Emitter-base resistor (R2) value (10kOhms preferred, variations acceptable within application tolerance)
DC current gain (hFE) characteristics
Saturation voltage performance
Transition frequency capability
Power dissipation rating
RoHS3 compliance and MSL rating

All identified substitute parts meet the primary matching criteria. Variations in secondary parameters reflect different manufacturer implementations while maintaining functional equivalence for standard switching and amplification circuits. Package variants (SOT-563, SOT-666, EMT6) are mechanically compatible within surface mount assembly processes.

Parameter Comparison

Parameter	PEMB11,115 (Nexperia)	DDA114TH-7 (Diodes Inc.)	EMB11T2R (Rohm)	NSBA114EDXV6T1G (onsemi)	NSBA114YDXV6T1G (onsemi)	NSVBA114EDXV6T1G (onsemi)
Transistor Type	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	50 V
Resistor - Base (R1)	10 kOhms	10 kOhms	10 kOhms	10 kOhms	10 kOhms	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms	—	10 kOhms	10 kOhms	47 kOhms	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	100 @ 1mA, 5V	20 @ 5mA, 5V	35 @ 5mA, 10V	80 @ 5mA, 10V	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	150 mV @ 500µA, 10mA	300 mV @ 100µA, 1mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	1 µA	—	500 nA	500 nA	500 nA	500 nA
Frequency - Transition	180 MHz	250 MHz	250 MHz	—	—	—
Power - Max	300 mW	150 mW	150 mW	500 mW	500 mW	500 mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-666	SOT-563	EMT6	SOT-563	SOT-563	SOT-563
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Not For New Designs	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Recommendation: NSBA114EDXV6T1G or NSVBA114EDXV6T1G (onsemi)

Both onsemi variants provide the closest electrical alignment to the PEMB11,115 specification. These parts feature identical base resistor values (10kOhms), matching saturation voltage performance (250mV @ 300µA, 10mA), and enhanced power dissipation capability (500mW). Both carry Active product status with full RoHS3 compliance and MSL 1 rating. The NSVBA114EDXV6T1G is supplied in Tape & Reel packaging, matching the original PEMB11,115 format. The NSBA114EDXV6T1G is available in Cut Tape format with significantly higher inventory (3920 units).

Secondary Recommendation: EMB11T2R (Rohm Semiconductor)

The EMB11T2R provides exact parameter matching on base and emitter-base resistor values (both 10kOhms) and identical saturation voltage specification (300mV @ 500µA, 10mA). This part carries Active product status with 20,628 units in stock. The EMT6 package requires verification of PCB footprint compatibility with existing SOT-666 designs. Transition frequency is rated at 250MHz, exceeding the original 180MHz specification.

Tertiary Recommendation: DDA114TH-7 (Diodes Incorporated)

The DDA114TH-7 meets all primary matching criteria with 100mA collector current and 50V breakdown voltage. This part features the highest DC current gain (100 @ 1mA, 5V) among substitute options and 250MHz transition frequency. The SOT-563 package requires PCB layout verification. Inventory availability is substantial (30,300 units). Note that the emitter-base resistor value is not specified in available documentation.

Package Compatibility Consideration:

The original PEMB11,115 uses SOT-666 packaging. Substitute parts employ SOT-563 or EMT6 packages. While these are functionally equivalent surface mount packages, PCB footprint and land pattern modifications are required. Verify mechanical compatibility with existing assembly tooling and reflow profiles before production implementation.

Compliance Status:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q: Can the PEMB11,115 be directly replaced with any of these substitute parts without PCB modification?

A: Direct replacement without PCB modification is not possible. The PEMB11,115 uses SOT-666 packaging, while most substitutes employ SOT-563 or EMT6 packages. These packages have different pin configurations and land patterns. PCB footprint redesign is required. However, the electrical functionality is fully compatible.

Q: What is the significance of the "Not For New Designs" status on the PEMB11,115?

A: This status indicates that Nexperia has discontinued active development and support for this part number. While existing inventory may remain available, the manufacturer does not guarantee long-term supply or design support. Substitution to an Active product line part is recommended for new designs and long-term production continuity.

Q: Are all substitute parts functionally equivalent for switching applications?

A: Yes. All substitute parts meet the critical electrical parameters: 100mA maximum collector current, 50V collector-emitter breakdown voltage, 10kOhms base resistor, and dual PNP pre-biased configuration. Variations in DC current gain, saturation voltage, and transition frequency reflect different manufacturer implementations but do not prevent functional equivalence in standard switching circuits.

Q: What is the difference between NSBA114EDXV6T1G and NSVBA114EDXV6T1G?

A: Both parts are electrically identical with matching specifications. The primary difference is packaging format: NSBA114EDXV6T1G is supplied in Cut Tape (CT) format, while NSVBA114EDXV6T1G is supplied in Tape & Reel (TR) format. The Tape & Reel format matches the original PEMB11,115 packaging method. Select based on assembly line requirements and inventory management preferences.

Q: Why does NSBA114YDXV6T1G have a different emitter-base resistor value (47kOhms vs. 10kOhms)?

A: The NSBA114YDXV6T1G variant incorporates a 47kOhms emitter-base resistor instead of 10kOhms. This modification alters the biasing characteristics and DC current gain (80 @ 5mA, 10V vs. 35 @ 5mA, 10V). This variant is suitable for applications requiring higher current gain but may not be appropriate for direct substitution in circuits designed for the original 10kOhms configuration. Verify circuit requirements before selection.

Q: What is the impact of different power ratings (300mW vs. 150mW vs. 500mW)?

A: Power rating indicates maximum allowable power dissipation under specified thermal conditions. The PEMB11,115 is rated at 300mW. Substitute parts with 150mW ratings (DDA114TH-7, EMB11T2R) have lower thermal headroom and require verification that circuit operating conditions do not exceed this limit. Substitute parts with 500mW ratings (onsemi variants) provide additional thermal margin. For applications operating near maximum power dissipation, select parts with equal or higher power ratings.

Q: Are there any differences in RoHS or REACH compliance between the main part and substitutes?

A: No. The PEMB11,115 and all substitute parts are ROHS3 compliant and REACH unaffected. All parts carry identical compliance certifications, ensuring compatibility with environmental and regulatory requirements.

Q: What inventory considerations should guide substitute part selection?

A: Current inventory levels vary significantly: NSBA114YDXV6T1G (21,100 units), DDA114TH-7 (30,300 units), EMB11T2R (20,628 units), NSVBA114EDXV6T1G (777 units), and NSBA114EDXV6T1G (3,920 units). For high-volume production or long-term supply security, prioritize parts with higher inventory levels. For immediate prototyping or low-volume applications, any part with adequate stock is suitable.

Q: Can transition frequency differences (180MHz vs. 250MHz) affect circuit performance?

A: Transition frequency (fT) indicates the frequency at which current gain drops to unity. Higher transition frequency provides better high-frequency performance. The PEMB11,115 operates at 180MHz, while most substitutes operate at 250MHz or higher. For applications operating below 180MHz, this difference is not significant. For circuits approaching or exceeding 180MHz, the higher transition frequency of substitute parts provides improved performance margin.

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