PDTB113ES,126 Equivalent & Substitute Parts Reference

Part Overview

The PDTB113ES,126 is a pre-biased PNP bipolar junction transistor (BJT) rated for 50 V collector-emitter breakdown voltage and 500 mA maximum collector current. It is supplied in a TO-92-3 through-hole package and is part of the NXP USA Inc. portfolio. The part is designated obsolete, necessitating the identification of substitute transistors with equivalent key parameters to maintain function in existing or new designs.

Key Parameters

Parameter	PDTB113ES,126 Specification
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Power - Max	500 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Part Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for PDTB113ES,126 are selected exclusively from transistors matching the following key parameters: transistor type (PNP, pre-biased configuration), maximum collector current (500 mA), maximum collector-emitter voltage (50 V), internal base and emitter base resistors values (R1 = 1 kOhms, R2 = 1 kOhms), minimum current gain (hFE), maximum collector cut-off current, and collector-emitter saturation voltage. Additional matching criteria include compliance (RoHS, REACH), product status (active), and similar packaging within the same product category.

Parameter Comparison

Parameter	PDTB113ES,126 (NXP USA Inc.)	DTB113ECT116 (Rohm Semiconductor)	DTB113EKT146 (Rohm Semiconductor)
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V
Resistor - Base (R1)	1 kOhms	1 kOhms	1 kOhms
Resistor - Emitter Base (R2)	1 kOhms	1 kOhms	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	33 @ 50mA, 5V	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA	300mV @ 2.5mA, 50mA	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA	500nA	500nA
Power - Max	500 mW	200 mW	200 mW
Mounting Type	Through Hole	Surface Mount	Surface Mount
Package / Case	TO-226-3, TO-92-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-92-3	SST3	SMT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

Selection is determined by product status, RoHS compliance, and REACH status. Substitute parts DTB113ECT116 and DTB113EKT146 are both classified as active and comply with RoHS3 and REACH requirements. Moisture Sensitivity Level (MSL) is consistent across all compared parts. Packaging and mounting style should be considered according to application requirements.

Frequently Asked Questions (FAQ)

Q: What key parameters are required for substituting PDTB113ES,126 in the Transistors, Bipolar (BJT) category?
A: Substitute devices must match on transistor type (PNP, pre-biased), maximum collector-emitter voltage (50 V), maximum collector current (500 mA), base and emitter base resistor values (R1 and R2 of 1 kOhms each), minimum current gain, cut-off current, and collector-emitter saturation voltage.

Q: Are the recommended substitutes RoHS3 compliant and REACH unaffected?
A: Yes, both DTB113ECT116 and DTB113EKT146 are RoHS3 compliant and REACH unaffected.

Q: How does mounting type affect compatibility?
A: The main part is through-hole (TO-92-3), while recommended substitutes are surface mount (TO-236-3, SC-59, SOT-23-3). Compatibility in applications requiring a specific mounting type or package must be verified according to the application’s assembly requirements.

Q: Is the electrical functionality equivalent between PDTB113ES,126 and its listed substitutes?
A: Substitute parts are equivalent regarding PNP pre-biased transistor configuration, maximum voltage, current ratings, resistor values, and electrical characteristics as per the parameters provided.

Q: Are there any differences in power dissipation?
A: The main part supports up to 500 mW, whereas substitute parts are rated for 200 mW. This aspect should be considered in thermal design and load conditions.

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