NTMFS4841NHT1G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTMFS4841NHT1G is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 8.6A at Ta and 59A at Tc. The device is packaged in a 5-DFN (5x6) surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements.

Substiute Parts

NTMFS4841NHT1G

onsemiIn Stock: 1722NTMFS4841NHT1G Datasheet

Current PartRFQ

PSMN6R0-30YL,115

Nexperia USA Inc.In Stock: 4754PSMN6R0-30YL,115 Datasheet

SimilarRFQ

PSMN7R0-30YL,115

Nexperia USA Inc.In Stock: 3623PSMN7R0-30YL,115 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTMFS4841NHT1G is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current: Must support minimum 8.6A at Ta or equivalent thermal performance
• Rds On characteristics: Must maintain acceptable on-resistance at specified gate voltage
• Gate Charge: Must be compatible with existing gate drive circuitry
• Vgs(th): Must fall within acceptable threshold voltage range for circuit operation
• Operating Temperature Range: Must support -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package footprint compatibility: Substitutes may differ in package type but must be surface mountable

The substitute parts PSMN6R0-30YL,115 and PSMN7R0-30YL,115 from Nexperia USA Inc. satisfy these criteria through equivalent Vdss rating, superior continuous drain current capability, and compatible electrical characteristics. Both substitutes are rated for higher maximum operating temperature (175°C) and provide enhanced thermal performance.

Parameter Comparison

Engineering Selection Recommendations

PSMN6R0-30YL,115 Selection Criteria: The PSMN6R0-30YL,115 provides the highest continuous drain current rating at 79A (Tc), exceeding the NTMFS4841NHT1G specification of 59A. This device delivers superior thermal performance with 55W maximum power dissipation and reduced on-resistance of 6mOhm at 10V Vgs. The lower gate charge (24nC) and input capacitance (1425pF) reduce gate drive requirements. Extended operating temperature range to 175°C provides additional thermal margin. RoHS3 compliance and unlimited MSL rating maintain regulatory alignment. Product status is "Not For New Designs," indicating mature technology with established supply chains.

PSMN7R0-30YL,115 Selection Criteria: The PSMN7R0-30YL,115 matches the on-resistance specification of the original part at 7mOhm while providing 76A continuous drain current capability. Gate charge of 22nC and input capacitance of 1270pF represent the lowest values among all three devices, optimizing gate drive efficiency. Power dissipation of 51W and extended temperature range to 175°C ensure robust thermal performance. RoHS3 compliance and unlimited MSL rating satisfy regulatory requirements. This device offers the most direct electrical characteristic alignment with the NTMFS4841NHT1G while providing enhanced current handling.

Regulatory and Compliance Alignment: Both substitute parts maintain ROHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity level (MSL 1), ensuring compatibility with existing supply chain and manufacturing processes. All three devices carry EAR99 ECCN classification and identical HTSUS codes, confirming regulatory equivalence.

Package Consideration: The substitute parts utilize LFPAK56 (Power-SO8) packaging, which differs from the original 5-DFN (5x6) package. PCB layout redesign is required for implementation. The LFPAK56 package provides superior thermal performance through enhanced copper area and lead configuration, supporting the higher power dissipation ratings of the substitute devices.

Frequently Asked Questions (FAQ)

Q: Can PSMN6R0-30YL,115 or PSMN7R0-30YL,115 directly replace NTMFS4841NHT1G without circuit modification?

A: Electrical substitution is feasible based on matching Vdss (30V), compatible Vgs(th) thresholds, and equivalent gate drive voltage requirements (4.5V to 10V). However, package footprint differs (LFPAK56 versus 5-DFN), requiring PCB layout redesign. Gate charge and input capacitance differences may require gate drive circuit evaluation to confirm adequate drive capability.

Q: What are the key electrical differences between the two substitute parts?

A: PSMN6R0-30YL,115 provides 79A continuous drain current with 6mOhm on-resistance and 24nC gate charge. PSMN7R0-30YL,115 provides 76A continuous drain current with 7mOhm on-resistance and 22nC gate charge. Both exceed the original 59A specification. PSMN7R0-30YL,115 offers lower gate charge and input capacitance, reducing gate drive power requirements.

Q: Are there thermal performance advantages to using the substitute parts?

A: Yes. Both substitutes support maximum power dissipation of 51W to 55W at Tc, compared to 41.7W for the original part. Extended operating temperature range to 175°C (versus 150°C) provides additional thermal margin. The LFPAK56 package offers superior thermal characteristics through enhanced copper area and lead configuration.

Q: Do the substitute parts maintain regulatory compliance with the original design?

A: Yes. All three devices are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) rating. ECCN and HTSUS classifications are identical, confirming regulatory equivalence for supply chain and manufacturing purposes.

Q: What gate drive voltage is required for the substitute parts?

A: Both substitute parts specify drive voltage range of 4.5V to 10V, matching the original NTMFS4841NHT1G. Gate threshold voltage (Vgs(th)) is 2.15V for both substitutes, compared to 2.5V for the original part. This lower threshold may require gate drive circuit evaluation to confirm adequate margin and switching performance.

Q: How do input capacitance differences affect circuit performance?

A: PSMN6R0-30YL,115 has 1425pF input capacitance and PSMN7R0-30YL,115 has 1270pF, both lower than the original 2113pF. Lower input capacitance reduces gate charge requirements and improves switching speed. Gate drive circuits designed for the original part will operate with improved performance characteristics using the substitute devices.

Q: What is the impact of lower gate charge on existing gate drive circuits?

A: Gate charge for substitutes ranges from 22nC to 24nC, compared to 33nC for the original part. This 27% to 33% reduction decreases gate drive power dissipation and improves switching efficiency. Existing gate drive circuits will operate within specification with reduced power requirements and faster switching transitions.

Q: Are there any product status considerations for long-term availability?

A: The original NTMFS4841NHT1G is classified as obsolete, indicating discontinued production. Both substitute parts are classified as "Not For New Designs," indicating mature technology with established supply chains but no active development. For new designs, consultation with manufacturers regarding long-term availability and alternative solutions is recommended.