MTB23P06VT4 Equivalent & Substitute Parts

Part Overview

The MTB23P06VT4 is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 23A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for applications requiring moderate to high current switching in P-channel configurations.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this MOSFET.

Substiute Parts

MTB23P06VT4

onsemiIn Stock: 2123MTB23P06VT4 Datasheet

Current PartRFQ

SPB18P06PGATMA1

Infineon TechnologiesIn Stock: 2771SPB18P06PGATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the MTB23P06VT4 are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Primary Matching Criteria:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 175°C (TJ)

Secondary Compatibility Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 23A
• Rds On (Max) @ Id, Vgs: Equal to or lower than 120 mOhm
• Vgs(th) (Max) @ Id: Equal to or lower than 4V
• Gate Charge (Qg) (Max) @ Vgs: Equal to or lower than 50 nC
• Vgs (Max): Equal to or greater than ±15V
• Input Capacitance (Ciss) (Max) @ Vds: Equal to or lower than 1620 pF

The SPB18P06PGATMA1 from Infineon Technologies meets the primary matching criteria and maintains compatibility within the secondary parameters, with the exception of continuous drain current, which is rated at 18.7A. This reduction in current rating requires circuit-level evaluation to determine suitability for specific applications.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The MTB23P06VT4 is classified as obsolete, whereas the SPB18P06PGATMA1 is active and in production. Selection of the active substitute part ensures long-term supply chain viability and access to technical support from the manufacturer.

Compliance and Certification: The MTB23P06PGATMA1 is RoHS3 compliant, whereas the MTB23P06VT4 is RoHS non-compliant. Applications subject to RoHS directives or customer requirements for lead-free components benefit from substitution with the SPB18P06PGATMA1.

Electrical Performance: The SPB18P06PGATMA1 exhibits lower gate charge (28 nC versus 50 nC) and lower input capacitance (860 pF versus 1620 pF), resulting in faster switching characteristics and reduced gate drive power requirements. The substitute part also provides higher maximum gate-source voltage (±20V versus ±15V), offering greater design margin for gate drive circuits.

The continuous drain current rating of the SPB18P06PGATMA1 is 18.7A, compared to 23A for the MTB23P06VT4. Applications operating at or near the 23A limit of the original part require thermal and current distribution analysis to confirm suitability of the substitute.

Packaging and Thermal: Both parts utilize the TO-263-3 D2PAK package, ensuring mechanical and thermal interface compatibility. The SPB18P06PGATMA1 specifies 81.1W power dissipation at Ta, providing adequate thermal performance for most applications within the operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can the SPB18P06PGATMA1 directly replace the MTB23P06VT4 in all applications?

A: Direct replacement is possible in applications where the continuous drain current does not exceed 18.7A. The SPB18P06PGATMA1 meets all other electrical parameters and uses the same D2PAK package. Applications operating above 18.7A require circuit redesign or parallel device configuration.

Q: What is the significance of the lower gate charge in the SPB18P06PGATMA1?

A: Lower gate charge (28 nC versus 50 nC) reduces the energy required to switch the device and decreases gate drive circuit complexity. This results in faster switching transitions and lower power consumption in the gate drive circuit.

Q: Are there thermal differences between the two parts?

A: The MTB23P06VT4 specifies 90W power dissipation at Tc (case temperature), while the SPB18P06PGATMA1 specifies 81.1W at Ta (ambient temperature). Both parts operate within the same temperature range (-55°C to 175°C TJ). Thermal performance depends on PCB layout, heatsinking, and application duty cycle.

Q: Does the higher Vgs(Max) of the SPB18P06PGATMA1 affect circuit design?

A: The SPB18P06PGATMA1 supports ±20V gate-source voltage compared to ±15V for the MTB23P06VT4. This provides additional design margin and allows use in gate drive circuits with higher voltage swings without risk of gate oxide damage.

Q: What packaging considerations apply to substitution?

A: Both parts use the TO-263-3 D2PAK package with identical pinout and thermal interface. No PCB layout modifications are required for mechanical or thermal compatibility. Verify supplier device package designation (D2PAK versus PG-TO263-3) with your component distributor to ensure correct tape and reel configuration.

Q: Is RoHS compliance a factor in selecting the SPB18P06PGATMA1?

A: The SPB18P06PGATMA1 is RoHS3 compliant, whereas the MTB23P06VT4 is non-compliant. Applications subject to RoHS directives, customer specifications, or environmental regulations benefit from substitution with the compliant part.

Q: How do the Rds On specifications compare?

A: The MTB23P06VT4 specifies 120 mOhm at 11.5A and 10V, while the SPB18P06PGATMA1 specifies 130 mOhm at 13.2A and 10V. The slightly higher on-resistance of the substitute part results in marginally increased conduction losses. Applications with tight thermal budgets require power dissipation recalculation.