MR756G Equivalent & Substitute Parts

Part Overview

The MR756G is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 6 A average rectified current. The device features a through-hole Microde Button package and operates across a junction temperature range of -65°C to 175°C. This part is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

MR756G

onsemiIn Stock: 777MR756G Datasheet

Current PartRFQ

GI756-E3/54

Vishay General Semiconductor - Diodes DivisionIn Stock: 5809GI756-E3/54 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MR756G is based on electrical and mechanical parameter equivalence within the general-purpose rectifier diode category. The following parameters establish substitution eligibility:

Primary Electrical Parameters:

• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
• Speed: Standard Recovery >500ns, > 200mA (Io)

Mechanical Parameters:

• Mounting Type: Through Hole
• Package / Case: Axial configuration

Environmental Parameters:

• Technology: Standard
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The substitute part GI756-E3/54 manufactured by Vishay General Semiconductor - Diodes Division meets all primary electrical specifications and mechanical requirements. Both parts operate as standard recovery rectifier diodes with identical voltage and current ratings, forward voltage characteristics, and recovery speed classifications. The through-hole axial mounting configuration ensures mechanical compatibility in existing circuit board layouts.

Parameter Comparison

Engineering Selection Recommendations

The GI756-E3/54 serves as a direct electrical and mechanical substitute for the obsolete MR756G. Both devices share identical voltage ratings (600 V), current ratings (6 A), forward voltage characteristics (900 mV @ 6 A), and recovery speed classifications (Standard Recovery >500ns, > 200mA).

The GI756-E3/54 offers the following advantages:

Product Status: The substitute part maintains active product status with Vishay General Semiconductor - Diodes Division, ensuring ongoing availability and supply chain continuity.

Compliance: The GI756-E3/54 is ROHS3 Compliant, whereas the MR756G product status does not specify RoHS compliance. Both parts carry REACH Unaffected status and EAR99 ECCN classification.

Reverse Leakage Performance: The GI756-E3/54 exhibits lower reverse leakage current (5 µA @ 600 V) compared to the MR756G (25 µA @ 600 V), indicating improved leakage characteristics.

Operating Temperature Range: The MR756G operates across -65°C to 175°C, while the GI756-E3/54 operates across -50°C to 150°C. Applications requiring operation below -50°C or above 150°C require evaluation of the narrower temperature range.

Packaging: Both parts utilize through-hole axial mounting. The MR756G employs Microde Button packaging, while the GI756-E3/54 uses P600 packaging. Physical dimensions and lead spacing require verification for board layout compatibility.

Frequently Asked Questions (FAQ)

Q: Can the GI756-E3/54 directly replace the MR756G in all applications?

A: The GI756-E3/54 meets all primary electrical specifications (600 V, 6 A, 900 mV forward voltage, standard recovery speed) and mechanical requirements (through-hole axial mounting). However, applications operating below -50°C or above 150°C require evaluation against the GI756-E3/54 operating temperature range of -50°C to 150°C, compared to the MR756G range of -65°C to 175°C. Physical package dimensions must be verified for board layout compatibility.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution eligibility is determined by: Voltage - DC Reverse (Vr) (Max) of 600 V, Current - Average Rectified (Io) of 6 A, Voltage - Forward (Vf) (Max) @ If of 900 mV @ 6 A, and Speed classification of Standard Recovery >500ns, > 200mA (Io). The GI756-E3/54 matches all these parameters.

Q: Does the GI756-E3/54 offer any performance improvements over the MR756G?

A: The GI756-E3/54 exhibits lower reverse leakage current at 5 µA @ 600 V compared to the MR756G at 25 µA @ 600 V. Additionally, the GI756-E3/54 maintains active product status and ROHS3 compliance, supporting long-term supply chain availability.

Q: Are there packaging considerations when substituting the MR756G with the GI756-E3/54?

A: Both parts utilize through-hole axial mounting configurations. The MR756G uses Microde Button packaging while the GI756-E3/54 uses P600 packaging. Physical lead spacing and package dimensions require verification against existing circuit board layouts to ensure mechanical compatibility.

Q: What compliance certifications apply to the GI756-E3/54?

A: The GI756-E3/54 is ROHS3 Compliant and carries REACH Unaffected status with EAR99 ECCN classification. Both the MR756G and GI756-E3/54 share REACH Unaffected status and EAR99 classification.

Q: Is the GI756-E3/54 suitable for applications requiring extended temperature operation?

A: The GI756-E3/54 operates across -50°C to 150°C junction temperature range. Applications requiring operation below -50°C or above 150°C fall outside this range. The original MR756G specification of -65°C to 175°C provides wider temperature coverage for such applications.