MPSH17_D27Z Equivalent & Substitute Parts

Part Overview

The MPSH17_D27Z is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for RF applications. This device operates at 15V collector-emitter breakdown voltage with a transition frequency of 800MHz and maximum power dissipation of 350mW. The component is packaged in a through-hole TO-92-3 configuration.

The MPSH17_D27Z is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, support legacy system repairs, and enable procurement of functionally compatible alternatives from active product lines.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	15V	V
Frequency - Transition	800MHz	MHz
Noise Figure (Typ @ f)	6dB @ 200MHz	dB
Gain	24dB	dB
Power - Max	350mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 5mA, 10V	—
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the MPSH17_D27Z is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration required
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 15V
Frequency - Transition: Must support 800MHz operation or higher
Power - Max: Must support 350mW or higher dissipation
DC Current Gain (hFE): Must meet or exceed minimum specifications at rated conditions

Secondary Considerations:

Mounting Type: Through-hole preferred for direct replacement; surface-mount alternatives require board redesign
Package compatibility: TO-92-3 through-hole is the baseline; alternative packages necessitate layout modifications
Product Status: Active products are preferred for long-term availability and supply chain stability

The substitute parts listed below are grouped into two categories:

Category A - Voltage-Compatible Substitutes (15V Rating): Parts maintaining the 15V collector-emitter breakdown voltage specification, enabling direct electrical compatibility in voltage-constrained applications.

Category B - Higher-Performance Substitutes (>15V or Enhanced Frequency): Parts exceeding the 15V specification or offering significantly higher transition frequencies, suitable for applications where enhanced performance margins or higher-frequency operation is acceptable.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Vce Breakdown (Max)	Frequency - Transition	Noise Figure (Typ @ f)	Gain	Power - Max	hFE (Min) @ Ic, Vce	Mounting Type	Package	Product Status
MPSH17_D27Z	onsemi	NPN	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	Through Hole	TO-92-3	Obsolete
BFR35APE6327HTSA1	Infineon Technologies	NPN	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	280mW	70 @ 15mA, 8V	Surface Mount	SOT-23-3	Active
MAX2601ESA+T	Analog Devices Inc./Maxim Integrated	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	Surface Mount	8-SOIC-EP	Active
BFP182RE7764HTSA1	Infineon Technologies	NPN	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	Surface Mount	SOT-143R	Active
BFP450H6433XTMA1	Infineon Technologies	NPN	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	Surface Mount	SOT-343	Active
BFP650H6327XTSA1	Infineon Technologies	NPN	4.5V	37GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	10.5dB ~ 21.5dB	500mW	110 @ 80mA, 3V	Surface Mount	SOT-343	Active
BFP760H6327XTSA1	Infineon Technologies	NPN	4V	45GHz	0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz	16.5dB ~ 29dB	240mW	160 @ 35mA, 3V	Surface Mount	SOT-343	Active
BFP840ESDH6327XTSA1	Infineon Technologies	NPN	2.25V	80GHz	0.85dB @ 5.5GHz	18.5dB	75mW	150 @ 10mA, 1.8V	Surface Mount	SOT-343	Active
HFA3102BZ	Renesas Electronics Corporation	6 NPN	12V	10GHz	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz	12.4dB ~ 17.5dB	250mW	40 @ 10mA, 3V	Surface Mount	14-SOIC	Active
MRF317	MACOM Technology Solutions	NPN	35V	—	—	10dB	100W	10 @ 5A, 5V	Chassis Mount	316-01	Active

Engineering Selection Recommendations

For Direct Through-Hole Replacement:

No active through-hole TO-92-3 NPN RF transistor substitutes are available from the provided substitute list. All active alternatives employ surface-mount packaging (SOT-23-3, SOT-143R, SOT-343, 8-SOIC, or 14-SOIC). Direct board-level replacement without layout modification is not possible.

For Voltage-Compatible Surface-Mount Alternatives (15V Rating):

The BFR35APE6327HTSA1 (Infineon Technologies) and MAX2601ESA+T (Analog Devices Inc./Maxim Integrated) maintain the 15V collector-emitter breakdown specification. Both devices are Active products with ROHS3 compliance and REACH Unaffected status, ensuring long-term availability and regulatory compliance. The BFR35APE6327HTSA1 operates at 5GHz transition frequency in a compact SOT-23-3 package. The MAX2601ESA+T provides significantly higher power dissipation (6.4W) and current handling (1.2A) in an 8-SOIC-EP package, suitable for higher-power applications.

For Higher-Frequency Applications:

The BFP182RE7764HTSA1 (Infineon Technologies, 8GHz, 12V) offers enhanced frequency performance with Active product status and ROHS3 compliance. The BFP450H6433XTMA1, BFP650H6327XTSA1, BFP760H6327XTSA1, and BFP840ESDH6327XTSA1 provide progressively higher transition frequencies (24GHz to 80GHz) for applications requiring extended frequency range. These devices operate at reduced voltage ratings (2.25V to 5V) and are suitable only for low-voltage circuit designs.

For Multi-Transistor Integration:

The HFA3102BZ (Renesas Electronics Corporation) integrates six NPN transistors in a single 14-SOIC package, operating at 12V and 10GHz. This device is Active with ROHS3 compliance and provides functional density for applications requiring multiple RF stages.

For High-Power Applications:

The MRF317 (MACOM Technology Solutions) is a chassis-mount device rated for 35V and 100W power dissipation, suitable for high-power RF amplification stages. This device is Active with ROHS3 compliance but operates at significantly different electrical and mechanical specifications than the MPSH17_D27Z.

All recommended substitutes carry Active product status, ensuring procurement availability and supply chain continuity. ROHS3 compliance and REACH Unaffected status are maintained across all active alternatives.

Frequently Asked Questions (FAQ)

Q: Can the MPSH17_D27Z be replaced with a direct through-hole equivalent?

A: No direct through-hole TO-92-3 equivalent is available from active product lines. The MPSH17_D27Z is obsolete, and the RF transistor market has transitioned to surface-mount packaging. Substitution requires board redesign to accommodate surface-mount components.

Q: What is the primary criterion for selecting a substitute part?

A: The collector-emitter breakdown voltage (Vce) is the primary electrical criterion. The MPSH17_D27Z operates at 15V maximum. Substitutes must either match this specification (BFR35APE6327HTSA1, MAX2601ESA+T) or operate at lower voltages if the application permits. Transition frequency must support or exceed 800MHz operation.

Q: Can I use BFP650H6327XTSA1 as a substitute?

A: The BFP650H6327XTSA1 is electrically incompatible for direct substitution. It operates at 4.5V maximum collector-emitter breakdown voltage, which is insufficient for 15V-rated circuits. This device is suitable only for applications redesigned for lower voltage operation. However, it offers superior frequency performance (37GHz) and higher power dissipation (500mW) for low-voltage RF applications.

Q: What is the difference between the BFR35APE6327HTSA1 and MAX2601ESA+T?

A: Both devices maintain the 15V collector-emitter breakdown specification. The BFR35APE6327HTSA1 is a compact SOT-23-3 surface-mount device with 5GHz transition frequency and 280mW power rating. The MAX2601ESA+T is a larger 8-SOIC-EP package with 1GHz transition frequency and significantly higher power dissipation (6.4W) and current handling (1.2A). Selection depends on frequency requirements, power dissipation needs, and available board space.

Q: Are all substitute parts RoHS compliant?

A: All active substitute parts listed are ROHS3 compliant and REACH Unaffected. The MPSH17_D27Z, being obsolete, does not carry RoHS certification. Substitution with active parts ensures compliance with current environmental and regulatory standards.

Q: What is the significance of the SOT-343 package used in BFP450H6433XTMA1, BFP650H6327XTSA1, BFP760H6327XTSA1, and BFP840ESDH6327XTSA1?

A: The SOT-343 package is a miniature surface-mount configuration with four leads, enabling compact circuit designs. These devices are suitable for high-frequency applications requiring minimal board footprint. However, they operate at reduced voltage ratings (2.25V to 5V) compared to the MPSH17_D27Z (15V), limiting their applicability to low-voltage RF circuits.

Q: Can the HFA3102BZ replace the MPSH17_D27Z?

A: The HFA3102BZ is a multi-transistor array containing six NPN transistors in a single 14-SOIC package. While it maintains 12V collector-emitter breakdown voltage and operates at 10GHz, it is designed for integrated RF applications rather than discrete transistor replacement. Substitution requires circuit redesign to utilize the integrated transistor array architecture.

Q: What is the operating temperature range for substitute parts?

A: All active substitute parts listed operate at a maximum junction temperature (TJ) of 150°C. The MPSH17_D27Z operating temperature specification is not provided in the input data. Verify that the 150°C maximum junction temperature of substitute parts is compatible with the intended application thermal environment.

Q: Is the MRF317 suitable as a substitute?

A: The MRF317 is a high-power chassis-mount RF transistor rated for 35V and 100W power dissipation. While it exceeds the MPSH17_D27Z voltage and power specifications, it operates at significantly different electrical characteristics (10dB gain, 12A maximum collector current) and requires chassis-mount mechanical integration. This device is suitable only for high-power RF amplification applications requiring complete circuit redesign.

Q: What packaging considerations apply when substituting the MPSH17_D27Z?

A: The MPSH17_D27Z is a through-hole TO-92-3 component. All active substitutes employ surface-mount packaging (SOT-23-3, SOT-143R, SOT-343, 8-SOIC, 14-SOIC, or chassis-mount). Surface-mount substitution requires board redesign, including new footprint layout, trace routing, and potentially different assembly processes. Evaluate board space availability, thermal management requirements, and manufacturing capabilities before selecting a surface-mount alternative.

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