MPSH10-AP Equivalent & Substitute Parts

Part Overview

The MPSH10-AP is an RF transistor NPN manufactured by Micro Commercial Co, designed for through-hole applications in the TO-92 package. This device operates at 25V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 350mW. The MPSH10-AP is classified as obsolete, making equivalent and substitute parts necessary for ongoing design requirements and production continuity. Substitute parts are selected based on matching or exceeding critical electrical parameters while accommodating different packaging technologies and form factors.

Substiute Parts

MPSH10-AP
Micro Commercial CoIn Stock: 701MPSH10-AP Datasheet
MPSH10-AP
Current Part
2SC5087R(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 41762SC5087R(TE85L,F) Datasheet
2SC5087R(TE85L,F)
MFR Recommended
BFP196E6327HTSA1
Infineon TechnologiesIn Stock: 14347BFP196E6327HTSA1 Datasheet
BFP196E6327HTSA1
MFR Recommended
BFP843H6327XTSA1
Infineon TechnologiesIn Stock: 7041BFP843H6327XTSA1 Datasheet
BFP843H6327XTSA1
MFR Recommended
BFR840L3RHESDE6327XTSA1
Infineon TechnologiesIn Stock: 14013BFR840L3RHESDE6327XTSA1 Datasheet
BFR840L3RHESDE6327XTSA1
MFR Recommended
KSP10BU
Fairchild SemiconductorIn Stock: 124127KSP10BU Datasheet
KSP10BU
MFR Recommended
MCH4015-TL-H
onsemiIn Stock: 4011MCH4015-TL-H Datasheet
MCH4015-TL-H
MFR Recommended
MMBTH10-4LT1G
onsemiIn Stock: 18418MMBTH10-4LT1G Datasheet
MMBTH10-4LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 25V V
Frequency - Transition 650MHz MHz
Power - Max 350mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V -
Current - Collector (Ic) (Max) 50mA mA
Operating Temperature -55°C ~ 150°C °C
Mounting Type Through Hole -
Package / Case TO-92-3 -
RoHS Status RoHS Compliant -

Substitute Part Grouping Explanation

Substitute parts for the MPSH10-AP are grouped based on electrical parameter compatibility and application suitability. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor Type: NPN (mandatory match)
  • Voltage - Collector Emitter Breakdown (Max): 25V or higher
  • Frequency - Transition: 650MHz or higher
  • Power - Max: 350mW or higher
  • DC Current Gain (hFE): 60 or higher at specified conditions
  • Current - Collector (Ic) (Max): 50mA or higher
  • Operating Temperature Range: Must include 150°C maximum

Substitution Categories:

Category 1: Through-Hole Direct Replacement The KSP10BU from Fairchild Semiconductor matches all critical electrical parameters and maintains through-hole TO-92-3 packaging, providing a direct form-factor replacement for the obsolete MPSH10-AP.

Category 2: Surface Mount Equivalents with Matching Voltage and Frequency The MMBTH10-4LT1G from onsemi provides equivalent voltage rating (25V) and exceeds frequency performance (800MHz), with surface mount SOT-23-3 packaging suitable for modern PCB designs.

Category 3: Higher Performance Surface Mount Options The MCH4015-TL-H, 2SC5087R(TE85L,F), and BFP196E6327HTSA1 offer enhanced frequency performance (10GHz, 8GHz, and 7.5GHz respectively) with increased power handling and current capacity, suitable for applications requiring higher performance margins.

Category 4: Ultra-High Frequency Specialized Devices The BFP843H6327XTSA1 and BFR840L3RHESDE6327XTSA1 are optimized for ultra-high frequency applications (125GHz and 75GHz respectively) with reduced voltage ratings, applicable only to designs with lower voltage requirements.

Parameter Comparison

Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Power - Max DC Current Gain (hFE) (Min) Current - Collector (Ic) (Max) Operating Temperature (Max) Mounting Type Package / Case Product Status
MPSH10-AP Micro Commercial Co NPN 25V 650MHz 350mW 60 @ 4mA, 10V 50mA 150°C Through Hole TO-92-3 Obsolete
KSP10BU Fairchild Semiconductor NPN 25V 650MHz 350mW 60 @ 4mA, 10V - 150°C Through Hole TO-92-3 Active
MMBTH10-4LT1G onsemi NPN 25V 800MHz 225mW 120 @ 4mA, 10V - 150°C Surface Mount SOT-23-3 Active
MCH4015-TL-H onsemi NPN 12V 10GHz 450mW 60 @ 50mA, 5V 100mA 150°C Surface Mount SOT-343F Active
2SC5087R(TE85L,F) Toshiba Semiconductor and Storage NPN 12V 8GHz 150mW 120 @ 20mA, 10V 80mA 125°C Surface Mount SMQ Active
BFP196E6327HTSA1 Infineon Technologies NPN 12V 7.5GHz 700mW 70 @ 50mA, 8V 150mA 150°C Surface Mount TO-253-4 Active
BFP843H6327XTSA1 Infineon Technologies NPN 2.25V - 125mW 150 @ 15mA, 1.8V 55mA 150°C Surface Mount SOT-343 Active
BFR840L3RHESDE6327XTSA1 Infineon Technologies NPN 2.6V 75GHz 75mW 150 @ 10mA, 1.8V 35mA 150°C Surface Mount SOT-883 Active

Engineering Selection Recommendations

For Direct Through-Hole Replacement: The KSP10BU from Fairchild Semiconductor is the primary recommendation for applications requiring through-hole mounting. This device maintains identical electrical specifications to the MPSH10-AP (25V, 650MHz, 350mW, 60 hFE) while offering active product status and RoHS3 compliance. The KSP10BU is available in high inventory quantities (124,035 pcs) and requires no circuit redesign.

For Surface Mount Migration with Voltage Compatibility: The MMBTH10-4LT1G from onsemi provides a surface mount alternative while maintaining the 25V voltage rating of the original MPSH10-AP. This device offers improved frequency performance (800MHz) and higher current gain (120 hFE), with ROHS3 compliance and REACH unaffected status. The SOT-23-3 package is suitable for modern PCB layouts.

For Enhanced Performance Applications: The MCH4015-TL-H from onsemi and BFP196E6327HTSA1 from Infineon Technologies are suitable for applications requiring higher frequency operation (10GHz and 7.5GHz respectively) and increased power handling. Both devices maintain 150°C maximum operating temperature and offer ROHS3 compliance. Note that MCH4015-TL-H operates at 12V maximum, requiring voltage derating in 25V applications.

For Ultra-High Frequency Specialized Applications: The BFP843H6327XTSA1 and BFR840L3RHESDE6327XTSA1 are applicable only to designs with reduced voltage requirements (2.25V and 2.6V respectively). These devices are not suitable as general replacements for the MPSH10-AP due to voltage incompatibility.

Compliance Considerations: All recommended substitute parts maintain RoHS compliance (RoHS3 or RoHS Compliant). The Infineon devices (BFP196E6327HTSA1, BFP843H6327XTSA1, BFR840L3RHESDE6327XTSA1) carry REACH Unaffected status. All parts are classified under ECCN EAR99.

Frequently Asked Questions (FAQ)

Q: Can the MMBTH10-4LT1G replace the MPSH10-AP in all applications? A: The MMBTH10-4LT1G maintains the 25V voltage rating and exceeds frequency performance (800MHz vs. 650MHz). However, it operates at reduced maximum power (225mW vs. 350mW) and requires surface mount PCB design. Verify power dissipation requirements in your specific application before substitution.

Q: What is the primary advantage of the KSP10BU over the MPSH10-AP? A: The KSP10BU provides identical electrical performance with active product status, eliminating obsolescence concerns. It maintains through-hole TO-92-3 packaging, allowing direct board-level replacement without design modification.

Q: Why do the MCH4015-TL-H and 2SC5087R operate at 12V instead of 25V? A: These devices are optimized for higher frequency operation (10GHz and 8GHz respectively) with different semiconductor designs. The reduced voltage rating reflects their specialized RF performance characteristics. They are suitable only for applications with 12V or lower voltage requirements.

Q: Are the BFP843H6327XTSA1 and BFR840L3RHESDE6327XTSA1 suitable replacements for the MPSH10-AP? A: These devices are not suitable as general replacements. Their maximum voltage ratings (2.25V and 2.6V respectively) are significantly lower than the MPSH10-AP (25V), making them applicable only to specialized low-voltage, ultra-high-frequency applications.

Q: What packaging considerations apply when switching from through-hole to surface mount? A: Surface mount substitutes (MMBTH10-4LT1G, MCH4015-TL-H, BFP196E6327HTSA1, BFP843H6327XTSA1, BFR840L3RHESDE6327XTSA1) require PCB redesign with appropriate land patterns, solder reflow processes, and thermal management considerations. Through-hole designs cannot directly accommodate surface mount packages without board layout modification.

Q: How do the DC current gain specifications compare across substitute parts? A: The MPSH10-AP specifies 60 hFE minimum at 4mA, 10V. The MMBTH10-4LT1G provides 120 hFE at the same conditions, offering improved gain. The MCH4015-TL-H maintains 60 hFE but at different conditions (50mA, 5V). Higher gain devices may require circuit biasing adjustments in sensitive applications.

Q: What is the operating temperature range compatibility? A: The MPSH10-AP operates from -55°C to 150°C. The KSP10BU and MMBTH10-4LT1G maintain this full range. The 2SC5087R operates to 125°C maximum, which may be limiting in high-temperature applications. All other substitutes operate to 150°C maximum.

Q: Are all substitute parts RoHS compliant? A: Yes. The KSP10BU is RoHS Compliant. The MMBTH10-4LT1G, MCH4015-TL-H, BFP196E6327HTSA1, BFP843H6327XTSA1, and BFR840L3RHESDE6327XTSA1 are all ROHS3 Compliant. All parts meet current environmental compliance requirements.

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