MMDT4403-7-F Equivalent & Substitute Parts

Part Overview

The MMDT4403-7-F is a dual PNP bipolar junction transistor (BJT) array manufactured by Diodes Incorporated in a surface mount SOT-363 package. This component operates at a maximum collector current of 600mA, collector-emitter breakdown voltage of 40V, and maximum power dissipation of 200mW. The device is designed for general-purpose switching and amplification applications requiring dual PNP transistor functionality in a compact form factor.

The MMDT4403-7-F maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility, and operational specifications. Alternative components may be required due to supply availability, manufacturing lead times, or specific application requirements for enhanced electrical characteristics.

Substiute Parts

MMDT4403-7-F
Diodes IncorporatedIn Stock: 20338MMDT4403-7-F Datasheet
MMDT4403-7-F
Current Part
MMDT4403-TP
Micro Commercial CoIn Stock: 29259MMDT4403-TP Datasheet
MMDT4403-TP
Direct
BC857BDW1T1G
onsemiIn Stock: 2105791BC857BDW1T1G Datasheet
BC857BDW1T1G
MFR Recommended
BC857S-TP
Micro Commercial CoIn Stock: 4186BC857S-TP Datasheet
BC857S-TP
MFR Recommended
BC857SH6327XTSA1
Infineon TechnologiesIn Stock: 68800BC857SH6327XTSA1 Datasheet
BC857SH6327XTSA1
MFR Recommended
MBT3906DW1T1G
onsemiIn Stock: 125391MBT3906DW1T1G Datasheet
MBT3906DW1T1G
MFR Recommended
NST45010MW6T1G
onsemiIn Stock: 17470NST45010MW6T1G Datasheet
NST45010MW6T1G
MFR Recommended
SBC857BDW1T1G
onsemiIn Stock: 68442SBC857BDW1T1G Datasheet
SBC857BDW1T1G
MFR Recommended
SBC857CDW1T1G
onsemiIn Stock: 6910SBC857CDW1T1G Datasheet
SBC857CDW1T1G
MFR Recommended
SMBT3906DW1T1G
onsemiIn Stock: 56290SMBT3906DW1T1G Datasheet
SMBT3906DW1T1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 2 PNP (Dual)
Maximum Collector Current (Ic) 600 mA
Collector-Emitter Breakdown Voltage (VCEO) 40 V
VCE Saturation @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) @ Ic, VCE 100 @ 150mA, 2V
Maximum Power Dissipation 200 mW
Transition Frequency (fT) 200 MHz
Operating Temperature Range -55 to 150 °C
Package Type SOT-363 (6-TSSOP, SC-88)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MMDT4403-7-F are classified into two functional categories based on electrical parameter compatibility:

Category 1: Direct Electrical Equivalents Parts that match or exceed the primary electrical specifications of the MMDT4403-7-F, including maximum collector current (600mA or higher), collector-emitter breakdown voltage (40V or higher), power dissipation (200mW or higher), and transition frequency (200MHz or higher). These parts maintain identical or superior performance characteristics and are pin-compatible within the SOT-363 package family.

Category 2: Functional Substitutes with Parameter Variations Parts that operate within the same application space but with modified electrical characteristics. These substitutes may feature reduced maximum collector current (100mA to 200mA), increased collector-emitter breakdown voltage (45V), or different power dissipation ratings (150mW to 380mW). Functional substitutes require circuit-level verification to confirm suitability for specific application requirements.

Key Substitution Parameters:

  • Transistor configuration: Dual PNP (2 PNP) required
  • Package compatibility: SOT-363, SC-88, 6-TSSOP
  • Surface mount technology: Required
  • Operating temperature range: -55°C to 150°C minimum
  • RoHS3 compliance: Required
  • Collector-emitter breakdown voltage: 40V minimum
  • Transition frequency: 100MHz minimum

Parameter Comparison

Part Number Manufacturer Ic (Max) mA VCEO (Max) V VCE Sat (Max) mV hFE (Min) Power (Max) mW fT (MHz) Package Status
MMDT4403-7-F Diodes Incorporated 600 40 750 100 200 200 SOT-363 Active
MMDT4403-TP Micro Commercial Co 600 40 750 100 200 200 SOT-363 Active
BC857BDW1T1G onsemi 100 45 650 220 380 100 SC-88/SOT-363 Active
BC857S-TP Micro Commercial Co 200 45 650 125 300 200 SOT-363 Active
BC857SH6327XTSA1 Infineon Technologies 100 45 650 200 250 250 SOT-363 Last Time Buy
MBT3906DW1T1G onsemi 200 40 400 100 150 250 SC-88/SOT-363 Active
NST45010MW6T1G onsemi 100 45 650 220 380 100 SC-88/SOT-363 Active
SBC857BDW1T1G onsemi 100 45 650 220 380 100 SC-88/SOT-363 Active
SBC857CDW1T1G onsemi 100 45 650 420 380 100 SC-88/SOT-363 Active
SMBT3906DW1T1G onsemi 200 40 400 100 150 250 SC-88/SOT-363 Active

Engineering Selection Recommendations

Direct Equivalent Selection

MMDT4403-TP (Micro Commercial Co) is the direct electrical equivalent to MMDT4403-7-F. Both components share identical electrical specifications: 600mA maximum collector current, 40V collector-emitter breakdown voltage, 200mW power dissipation, and 200MHz transition frequency. Both maintain Active product status, RoHS3 compliance, and SOT-363 package compatibility. This substitute provides equivalent performance with no circuit modifications required.

High Current Applications (≥200mA)

BC857S-TP (Micro Commercial Co) and MBT3906DW1T1G / SMBT3906DW1T1G (onsemi) support 200mA maximum collector current with 40V or 45V breakdown voltage ratings. These parts maintain 200MHz or 250MHz transition frequency and are suitable for applications requiring moderate current levels. MBT3906DW1T1G and SMBT3906DW1T1G feature reduced power dissipation (150mW) compared to the MMDT4403-7-F (200mW), requiring thermal design verification in power-limited applications.

Low Current, High Voltage Applications (≤100mA)

BC857BDW1T1G, NST45010MW6T1G, and SBC857BDW1T1G (onsemi) support 100mA maximum collector current with 45V collector-emitter breakdown voltage. These parts feature enhanced power dissipation (380mW) and are suitable for low-current switching applications. SBC857BDW1T1G and SBC857CDW1T1G carry automotive-grade qualification (AEC-Q101) for applications requiring automotive reliability standards.

Transition Frequency Considerations

BC857SH6327XTSA1 (Infineon Technologies) provides 250MHz transition frequency with 100mA collector current and 45V breakdown voltage. This part carries Last Time Buy status, indicating discontinued production. Selection of this substitute requires confirmation of long-term availability and inventory planning.

Compliance and Certification

All substitute parts maintain RoHS3 compliance, unlimited moisture sensitivity level (MSL 1), and REACH unaffected status, matching the MMDT4403-7-F regulatory profile. SBC857BDW1T1G and SBC857CDW1T1G include AEC-Q101 automotive qualification for applications requiring automotive-grade component certification.

Frequently Asked Questions (FAQ)

Q: Can MMDT4403-TP be used as a direct replacement for MMDT4403-7-F?

A: Yes. MMDT4403-TP is manufactured by Micro Commercial Co and provides identical electrical specifications to the MMDT4403-7-F: 600mA maximum collector current, 40V collector-emitter breakdown voltage, 200mW power dissipation, and 200MHz transition frequency. Both components use the SOT-363 package and maintain Active product status with RoHS3 compliance. No circuit modifications are required.

Q: What is the primary difference between the MMDT4403-7-F and BC857S-TP?

A: The MMDT4403-7-F supports 600mA maximum collector current, while BC857S-TP supports 200mA. The MMDT4403-7-F operates at 40V collector-emitter breakdown voltage with 200mW power dissipation. BC857S-TP operates at 45V breakdown voltage with 300mW power dissipation. BC857S-TP is suitable for applications requiring lower collector current levels. Circuit verification is required to confirm compatibility with the reduced current rating.

Q: Are SBC857BDW1T1G and SBC857CDW1T1G suitable for automotive applications?

A: Yes. Both SBC857BDW1T1G and SBC857CDW1T1G carry AEC-Q101 automotive qualification and are designated as automotive-grade components. These parts are suitable for applications requiring automotive reliability standards. Both support 100mA maximum collector current, 45V collector-emitter breakdown voltage, and 380mW power dissipation.

Q: What does Last Time Buy status mean for BC857SH6327XTSA1?

A: Last Time Buy status indicates that Infineon Technologies has discontinued production of the BC857SH6327XTSA1. This part remains available from existing inventory but will not be manufactured after the Last Time Buy date. Applications using this component should transition to alternative parts with Active product status to ensure long-term supply continuity.

Q: Can parts with 100mA maximum collector current replace the MMDT4403-7-F in all applications?

A: No. Parts with 100mA maximum collector current (BC857BDW1T1G, NST45010MW6T1G, SBC857BDW1T1G, SBC857CDW1T1G) cannot replace the MMDT4403-7-F in applications requiring collector currents exceeding 100mA. The MMDT4403-7-F supports 600mA maximum collector current. Circuit analysis is required to determine whether the reduced current rating is compatible with specific application requirements.

Q: Are all substitute parts compatible with the SOT-363 package footprint?

A: Yes. All substitute parts listed use SOT-363, SC-88, or 6-TSSOP package designations, which are mechanically and electrically compatible. These package variants share identical pin configurations and footprints suitable for surface mount assembly on standard PCB layouts designed for SOT-363 components.

Q: What is the significance of VCE saturation voltage differences between substitute parts?

A: VCE saturation voltage affects switching speed and power dissipation in saturated switching applications. The MMDT4403-7-F specifies 750mV saturation voltage at 50mA base current and 500mA collector current. Substitute parts with lower saturation voltages (400mV to 650mV) dissipate less power during saturation but may exhibit different switching characteristics. Applications with strict saturation voltage requirements require circuit verification.

Q: Do all substitute parts maintain the same operating temperature range as the MMDT4403-7-F?

A: Yes. All substitute parts listed support the -55°C to 150°C operating temperature range, matching the MMDT4403-7-F specification. This ensures thermal compatibility across industrial and extended temperature applications.

Q: What is the difference between matched pair and standard dual transistor configurations?

A: NST45010MW6T1G is designated as a matched pair dual transistor, indicating tighter parameter matching between the two transistors within the package. Standard dual transistor configurations (MMDT4403-7-F, BC857S-TP, MBT3906DW1T1G) do not guarantee matched pair characteristics. Matched pair configurations are suitable for precision analog applications requiring close parameter tracking between transistors.

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