MMDF3N02HDR2G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The MMDF3N02HDR2G is an N-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3.8A continuous drain current. This device is packaged in an 8-SOIC surface mount configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting the same packaging and thermal requirements.

Substiute Parts

MMDF3N02HDR2G

onsemiIn Stock: 15295MMDF3N02HDR2G Datasheet

Current PartRFQ

NTMD6N02R2G

onsemiIn Stock: 15336NTMD6N02R2G Datasheet

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IRF7103TRPBF

Infineon TechnologiesIn Stock: 17412IRF7103TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the MMDF3N02HDR2G is determined by the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel configuration required
• Technology: MOSFET (Metal Oxide) construction
• Drain to Source Voltage (Vdss): Minimum 20V rating (equal or greater)
• Continuous Drain Current (Id): Minimum 3.8A at 25°C (equal or greater)
• Power Dissipation: Minimum 2W (equal or greater)
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: 8-SOIC (0.154", 3.90mm Width) footprint
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The substitute parts listed below meet or exceed these parameters while maintaining package compatibility and thermal performance specifications.

Parameter Comparison

Engineering Selection Recommendations

NTMD6N02R2G (onsemi): This substitute is an active product with identical Vdss rating (20V) and superior continuous drain current (3.92A versus 3.8A). The NTMD6N02R2G features lower on-resistance (35 mOhm @ 6A, 4.5V) and lower gate threshold voltage (1.2V), providing improved switching efficiency. The device is ROHS3 compliant and maintains the same 8-SOIC package footprint. This part is recommended as the primary substitute due to electrical superiority and active product status from the same manufacturer.

IRF7103TRPBF (Infineon Technologies): This substitute is an active HEXFET product with higher Vdss rating (50V) and equivalent power dissipation (2W). The IRF7103TRPBF meets the minimum continuous drain current requirement (3A) and maintains the same 8-SOIC package footprint. The higher voltage rating provides additional design margin for transient protection. This part is ROHS3 compliant and suitable for applications where higher voltage headroom is beneficial. The higher gate charge (30 nC) and on-resistance (130 mOhm) should be evaluated against circuit timing and thermal requirements.

Both substitute parts are active products with current manufacturing status and full compliance certifications, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the NTMD6N02R2G directly replace the MMDF3N02HDR2G in existing designs?

A: The NTMD6N02R2G is electrically compatible as a direct replacement. Both devices share identical Vdss (20V), equivalent continuous drain current ratings, and the same 8-SOIC package footprint. The NTMD6N02R2G offers improved electrical characteristics with lower on-resistance and lower gate threshold voltage. No PCB layout modifications are required.

Q: What is the key difference between the NTMD6N02R2G and IRF7103TRPBF?

A: The primary difference is the Vdss rating: NTMD6N02R2G is rated for 20V (matching the original part), while IRF7103TRPBF is rated for 50V. The IRF7103TRPBF provides higher voltage margin but has higher on-resistance (130 mOhm versus 35 mOhm) and higher gate charge (30 nC versus 20 nC). Selection depends on circuit voltage requirements and switching speed constraints.

Q: Are all substitute parts available in the same package?

A: Yes. All three parts—MMDF3N02HDR2G, NTMD6N02R2G, and IRF7103TRPBF—are packaged in 8-SOIC (0.154", 3.90mm Width) surface mount configuration. PCB footprints are identical, and no layout changes are necessary for substitution.

Q: What is the significance of the dual N-Channel configuration in the substitute parts?

A: The NTMD6N02R2G and IRF7103TRPBF are dual N-Channel MOSFET arrays, meaning each package contains two independent N-Channel transistors. In single-transistor applications, only one channel is utilized, and the second channel remains unused. This configuration does not affect compatibility or functionality in single-transistor circuit designs.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both NTMD6N02R2G and IRF7103TRPBF are ROHS3 compliant. The original MMDF3N02HDR2G RoHS status was not specified in the provided data.

Q: What is the moisture sensitivity level for all parts?

A: All three parts—MMDF3N02HDR2G, NTMD6N02R2G, and IRF7103TRPBF—have Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Q: Which substitute part is recommended for new designs?

A: The NTMD6N02R2G is recommended for new designs. It is an active product from onsemi with identical voltage rating (20V), superior continuous drain current (3.92A), lower on-resistance, and lower gate threshold voltage. These characteristics provide improved performance and efficiency compared to the obsolete original part.