MMBT4403 Equivalent & Substitute Parts

Part Overview

The MMBT4403 is a PNP bipolar junction transistor (BJT) manufactured by onsemi in SOT-23-3 surface mount packaging. This component is rated for 40 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 300 mW power dissipation across an operating temperature range of -55°C to 150°C. The MMBT4403 is classified as obsolete product status, necessitating identification of active equivalent and substitute parts for new designs and ongoing production requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within acceptable parameter tolerances for the intended application.

Substiute Parts

MMBT4403
onsemiIn Stock: 305199MMBT4403 Datasheet
MMBT4403
Current Part
MMBT4403LT1G
onsemiIn Stock: 824352MMBT4403LT1G Datasheet
MMBT4403LT1G
Direct
MMBT4403LT3G
onsemiIn Stock: 46972MMBT4403LT3G Datasheet
MMBT4403LT3G
Direct
SMMBT4403LT1G
onsemiIn Stock: 54547SMMBT4403LT1G Datasheet
SMMBT4403LT1G
Direct
MMBT4403-7-F
Diodes IncorporatedIn Stock: 17425MMBT4403-7-F Datasheet
MMBT4403-7-F
Direct
MMBT4403-G
Comchip TechnologyIn Stock: 903MMBT4403-G Datasheet
MMBT4403-G
Direct
PMBT4403,215
Nexperia USA Inc.In Stock: 27361PMBT4403,215 Datasheet
PMBT4403,215
Direct
PMBT4403Z
Nexperia USA Inc.In Stock: 30458PMBT4403Z Datasheet
PMBT4403Z
Direct
2SB1197KT146Q
Rohm SemiconductorIn Stock: 798632SB1197KT146Q Datasheet
2SB1197KT146Q
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2SB1197KT146R
Rohm SemiconductorIn Stock: 1024322SB1197KT146R Datasheet
2SB1197KT146R
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BC807-16 RFG
Taiwan Semiconductor CorporationIn Stock: 12854BC807-16 RFG Datasheet
BC807-16 RFG
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BC807-16-7-F
Diodes IncorporatedIn Stock: 15720BC807-16-7-F Datasheet
BC807-16-7-F
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BC807-25-7-F
Diodes IncorporatedIn Stock: 26148BC807-25-7-F Datasheet
BC807-25-7-F
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BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
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BC857A-7-F
Diodes IncorporatedIn Stock: 15152BC857A-7-F Datasheet
BC857A-7-F
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BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
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BC857BE6327HTSA1
Infineon TechnologiesIn Stock: 3446BC857BE6327HTSA1 Datasheet
BC857BE6327HTSA1
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BC857BQ-7-F
Diodes IncorporatedIn Stock: 1303BC857BQ-7-F Datasheet
BC857BQ-7-F
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BC857C-7-F
Diodes IncorporatedIn Stock: 155250BC857C-7-F Datasheet
BC857C-7-F
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BC857CE6327HTSA1
Infineon TechnologiesIn Stock: 6459BC857CE6327HTSA1 Datasheet
BC857CE6327HTSA1
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BCW68HTA
Diodes IncorporatedIn Stock: 2029BCW68HTA Datasheet
BCW68HTA
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BCX71JE6327HTSA1
Infineon TechnologiesIn Stock: 45857BCX71JE6327HTSA1 Datasheet
BCX71JE6327HTSA1
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BCX71KE6327HTSA1
Infineon TechnologiesIn Stock: 1110BCX71KE6327HTSA1 Datasheet
BCX71KE6327HTSA1
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CMPT4403 TR PBFREE
Central Semiconductor CorpIn Stock: 17845CMPT4403 TR PBFREE Datasheet
CMPT4403 TR PBFREE
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DSS5240T-7
Diodes IncorporatedIn Stock: 39384DSS5240T-7 Datasheet
DSS5240T-7
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FMMT720TA
Diodes IncorporatedIn Stock: 105314FMMT720TA Datasheet
FMMT720TA
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MMBT4403-TP
Micro Commercial CoIn Stock: 1793MMBT4403-TP Datasheet
MMBT4403-TP
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MMBT4403_R1_00001
Panjit International Inc.In Stock: 22511MMBT4403_R1_00001 Datasheet
MMBT4403_R1_00001
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PMBT2907,215
NXP USA Inc.In Stock: 354089PMBT2907,215 Datasheet
PMBT2907,215
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PMBT4403,235
Nexperia USA Inc.In Stock: 33957PMBT4403,235 Datasheet
PMBT4403,235
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SMBT3906E6327HTSA1
Infineon TechnologiesIn Stock: 35044SMBT3906E6327HTSA1 Datasheet
SMBT3906E6327HTSA1
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MMBT4403
ANBON SEMICONDUCTOR (INT'L) LIMITEDIn Stock: 305163MMBT4403 Datasheet
MMBT4403
Parametric Equivalent
MMBT4403-HF
Comchip TechnologyIn Stock: 20959MMBT4403-HF Datasheet
MMBT4403-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Max) 40 V
Collector Current (Max) 600 mA
Power Dissipation (Max) 300 mW
Transition Frequency 200 MHz
DC Current Gain (hFE Min) 100 @ 150mA, 2V
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the MMBT4403 are classified into two categories based on electrical parameter alignment:

Direct Equivalents (Identical Electrical Specifications): Parts that maintain all critical electrical parameters including 40 V breakdown voltage, 600 mA collector current, 200 MHz transition frequency, and 300 mW power rating. These parts differ only in packaging format (Cut Tape, Tape & Reel) or manufacturer source while maintaining the same base electrical performance.

Functional Substitutes (Similar Electrical Specifications): Parts that operate within acceptable parameter ranges for most applications but exhibit variations in specific characteristics such as collector current capacity, power dissipation, or transition frequency. These substitutes are suitable when application requirements permit tolerance in secondary parameters.

Critical Substitution Parameters:

  • Collector-Emitter Breakdown Voltage: 40 V minimum
  • Collector Current: 600 mA minimum
  • Transition Frequency: 200 MHz minimum
  • Power Dissipation: 300 mW minimum
  • Operating Temperature: -55°C to 150°C minimum
  • Package: SOT-23-3 surface mount

Parameter Comparison

Part Number Manufacturer Product Status Ic (Max) mA Vce(br) (Max) V Power (Max) mW fT MHz hFE (Min) Temp Range °C Package RoHS
MMBT4403 onsemi Obsolete 600 40 300 200 100 -55 to 150 SOT-23-3
MMBT4403LT1G onsemi Active 600 40 300 200 100 -55 to 150 SOT-23-3 ROHS3
MMBT4403LT3G onsemi Active 600 40 300 200 100 -55 to 150 SOT-23-3 ROHS3
SMMBT4403LT1G onsemi Active 600 40 300 200 100 -55 to 150 SOT-23-3 ROHS3
MMBT4403-7-F Diodes Incorporated Active 600 40 300 200 100 -55 to 150 SOT-23-3 ROHS3
MMBT4403-G Comchip Technology Active 600 40 300 200 100 -55 to 150 SOT-23-3 ROHS3
PMBT4403,215 Nexperia USA Inc. Active 600 40 250 200 100 -55 to 150 TO-236AB ROHS3
PMBT4403Z Nexperia USA Inc. Active 600 40 250 200 100 -55 to 150 TO-236AB ROHS3
2SB1197KT146Q Rohm Semiconductor Active 800 32 200 200 120 -55 to 150 SMT3 ROHS3
2SB1197KT146R Rohm Semiconductor Active 800 32 200 200 180 -55 to 150 SMT3 ROHS3
BC807-16 RFG Taiwan Semiconductor Corporation Active 500 45 300 100 100 -55 to 150 SOT-23 ROHS3

Engineering Selection Recommendations

Direct Equivalent Selection (Preferred for Replacement):

MMBT4403LT1G, MMBT4403LT3G, SMMBT4403LT1G, MMBT4403-7-F, and MMBT4403-G are direct electrical equivalents to the obsolete MMBT4403. These parts maintain identical collector current (600 mA), breakdown voltage (40 V), transition frequency (200 MHz), and operating temperature range (-55°C to 150°C). Selection among these equivalents depends on packaging format and availability:

  • MMBT4403LT1G and SMMBT4403LT1G: Available in Cut Tape format with high inventory levels (824,300 and 54,500 units respectively)
  • MMBT4403LT3G: Available in Tape & Reel format (46,872 units)
  • MMBT4403-7-F: Diodes Incorporated source with AEC-Q101 automotive qualification (17,380 units)
  • MMBT4403-G: Comchip Technology source with active status (853 units)

All direct equivalents carry ROHS3 compliance and MSL-1 moisture sensitivity rating.

Nexperia Alternatives (Power-Derating Application):

PMBT4403,215 and PMBT4403Z from Nexperia USA Inc. are functionally equivalent with one parameter variance: maximum power dissipation is 250 mW versus 300 mW for the original MMBT4403. Both parts maintain 40 V breakdown voltage, 600 mA collector current, and 200 MHz transition frequency. These parts carry AEC-Q101 automotive qualification and are suitable for applications where the 50 mW power reduction does not exceed thermal design margins. Inventory availability is 27,300 and 30,398 units respectively.

Functional Substitutes (Parameter Trade-offs):

2SB1197KT146Q and 2SB1197KT146R from Rohm Semiconductor operate as functional substitutes with the following parameter differences: collector current increased to 800 mA, breakdown voltage reduced to 32 V, and power dissipation reduced to 200 mW. These parts maintain 200 MHz transition frequency and -55°C to 150°C operating range. Substitution is applicable only when circuit design accommodates the 32 V maximum breakdown voltage and 200 mW power limit. DC current gain (hFE) is higher at 120 and 180 respectively, which may require bias network adjustment.

BC807-16 RFG from Taiwan Semiconductor Corporation exhibits reduced collector current (500 mA) and transition frequency (100 MHz) with increased breakdown voltage (45 V). This part is suitable only for low-frequency applications where 100 MHz transition frequency is acceptable and collector current does not exceed 500 mA.

Compliance and Qualification:

All active substitute parts carry ROHS3 compliance. MMBT4403-7-F and PMBT4403,215/PMBT4403Z carry AEC-Q101 automotive qualification, suitable for automotive and high-reliability applications. Standard industrial applications may use any active equivalent without qualification restriction.

Frequently Asked Questions (FAQ)

Q: Can MMBT4403LT1G directly replace the obsolete MMBT4403 without circuit modification?

A: Yes. MMBT4403LT1G maintains identical electrical specifications: 40 V breakdown voltage, 600 mA collector current, 200 MHz transition frequency, 300 mW power dissipation, and -55°C to 150°C operating temperature. The only difference is packaging format (Cut Tape vs. original format) and active product status. No circuit modification is required.

Q: What is the difference between MMBT4403LT1G and MMBT4403LT3G?

A: Both parts are electrically identical. The difference is packaging format: MMBT4403LT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBT4403LT3G is supplied in Tape & Reel (TR) format. Selection depends on assembly equipment compatibility and procurement volume requirements.

Q: Can PMBT4403,215 be used in place of MMBT4403?

A: PMBT4403,215 is functionally compatible with one limitation: maximum power dissipation is 250 mW instead of 300 mW. All other electrical parameters are identical (40 V, 600 mA, 200 MHz). Substitution is acceptable if circuit thermal design does not require the full 300 mW rating. PMBT4403,215 carries AEC-Q101 automotive qualification.

Q: Are 2SB1197KT146Q and 2SB1197KT146R suitable substitutes?

A: These parts are functional substitutes with parameter trade-offs. Breakdown voltage is reduced to 32 V (versus 40 V), power dissipation is reduced to 200 mW (versus 300 mW), but collector current is increased to 800 mA. Substitution requires verification that circuit design accommodates 32 V maximum voltage and 200 mW power limit. DC current gain is higher (120 and 180), which may require bias network adjustment.

Q: What does SOT-23-3 packaging mean?

A: SOT-23-3 is a surface mount package designation also known as TO-236-3 or SC-59. It contains three leads (Base, Collector, Emitter for BJT transistors) and is the standard small-outline package for low-power transistors. All listed equivalents use this same package footprint, ensuring PCB compatibility.

Q: Why is the original MMBT4403 marked as obsolete?

A: Product obsolescence indicates the manufacturer (onsemi) has discontinued production of this specific part number. Active equivalents such as MMBT4403LT1G, MMBT4403LT3G, and SMMBT4403LT1G provide identical functionality with continued manufacturing support and availability.

Q: Which substitute part has the highest inventory availability?

A: MMBT4403LT1G from onsemi has the highest inventory at 824,300 units in stock, followed by 2SB1197KT146R at 102,400 units. For immediate procurement needs, MMBT4403LT1G is the recommended choice.

Q: Do all substitute parts meet RoHS compliance?

A: All active substitute parts listed carry ROHS3 compliance certification. The original obsolete MMBT4403 does not specify RoHS status. For applications requiring RoHS compliance, any active equivalent or substitute part is acceptable.

Q: Is AEC-Q101 qualification required for my application?

A: AEC-Q101 automotive qualification is required only for automotive and high-reliability applications. MMBT4403-7-F (Diodes Incorporated) and PMBT4403,215/PMBT4403Z (Nexperia) carry this qualification. Standard industrial applications do not require AEC-Q101 qualification.

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