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MMBD1705 Equivalent & Substitute Parts
Part Overview
The MMBD1705 is a general-purpose diode array manufactured by onsemi, configured as a 1 Pair Common Anode with a maximum reverse voltage rating of 30 V and average rectified current of 50 mA per diode. The device is packaged in a surface mount TO-236-3 (SOT-23-3) package and utilizes standard diode technology with a reverse recovery time of 700 ps.
The MMBD1705 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing design requirements, maintenance operations, and production continuity where this part number is specified in existing schematics or bill of materials documentation.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Anode |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) (per Diode) | 50 mA |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 50 mA |
| Reverse Recovery Time (trr) | 700 ps |
| Current - Reverse Leakage @ Vr | 50 nA @ 20 V |
| Operating Temperature - Junction (Max) | 150°C |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | Standard |
Substitute Part Grouping Explanation
Substitution of the MMBD1705 is based on the following critical parameters that must be maintained or exceeded:
Mandatory Compatibility Parameters:
- Diode Configuration: 1 Pair Common Anode (pin-compatible topology)
- Package / Case: TO-236-3, SC-59, SOT-23-3 (physical and electrical footprint compatibility)
- Voltage - DC Reverse (Vr) (Max): 30 V minimum (voltage rating must equal or exceed the original specification)
- Mounting Type: Surface Mount (assembly process compatibility)
Performance Parameters:
- Current - Average Rectified (Io) (per Diode): Substitute must support the required 50 mA minimum
- Operating Temperature - Junction: Must support the maximum junction temperature requirement of 150°C
The CMPSH-3A-TP qualifies as a substitute because it maintains identical pin configuration, package form factor, and voltage rating while providing enhanced current handling capability (100 mA versus 50 mA) and superior temperature range specification. The substitute utilizes Schottky technology, which provides lower forward voltage drop and faster switching characteristics compared to the standard technology of the original part.
Parameter Comparison
| Parameter | MMBD1705 (onsemi) | CMPSH-3A-TP (Micro Commercial Co) |
|---|---|---|
| Diode Configuration | 1 Pair Common Anode | 1 Pair Common Anode |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 30 V |
| Current - Average Rectified (Io) (per Diode) | 50 mA | 100 mA |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 50 mA | 1 V @ 100 mA |
| Reverse Recovery Time (trr) | 700 ps | 4 ns |
| Current - Reverse Leakage @ Vr | 50 nA @ 20 V | 500 nA @ 30 V |
| Operating Temperature - Junction (Max) | 150°C | 150°C |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Standard | Schottky |
| Product Status | Obsolete | Active |
Engineering Selection Recommendations
The CMPSH-3A-TP from Micro Commercial Co is a direct substitute for the obsolete MMBD1705. Both components share identical pin configuration, package footprint, and maximum reverse voltage rating of 30 V, ensuring mechanical and electrical compatibility in existing PCB designs without layout modification.
The CMPSH-3A-TP is classified as an active product with current manufacturing availability, addressing the obsolescence status of the MMBD1705. Both components carry REACH Unaffected status and EAR99 export classification, maintaining regulatory compliance equivalence.
The substitute component provides enhanced electrical performance characteristics: current capacity is doubled (100 mA versus 50 mA), forward voltage drop is reduced (1 V versus 1.1 V), and operating temperature range is expanded to include negative temperature operation (-55°C to 150°C versus 150°C maximum). These improvements result from the Schottky technology implementation in the substitute part.
The reverse recovery time specification differs significantly (4 ns versus 700 ps), reflecting the technology difference between Schottky and standard diode implementations. Reverse leakage current is higher in the substitute (500 nA @ 30 V versus 50 nA @ 20 V), which is characteristic of Schottky diode technology.
Frequently Asked Questions (FAQ)
Q: Can the CMPSH-3A-TP be used as a direct replacement for the MMBD1705 without PCB modifications?
A: Yes. Both components utilize identical TO-236-3 (SOT-23-3) package geometry and pin configuration (1 Pair Common Anode). No PCB layout changes are required for mechanical or electrical compatibility.
Q: What is the primary reason for substituting the MMBD1705?
A: The MMBD1705 is classified as obsolete. The CMPSH-3A-TP is an active product with current manufacturing availability, ensuring supply chain continuity and long-term component availability.
Q: Are there differences in electrical performance between these components?
A: Yes. The CMPSH-3A-TP provides higher current capacity (100 mA versus 50 mA per diode), lower forward voltage drop (1 V versus 1.1 V), and expanded operating temperature range (-55°C to 150°C versus 150°C maximum). These differences result from Schottky technology implementation in the substitute. Reverse recovery time is longer (4 ns versus 700 ps) due to the technology difference.
Q: Do both components meet the same regulatory requirements?
A: Yes. Both the MMBD1705 and CMPSH-3A-TP carry REACH Unaffected status and EAR99 export classification, maintaining equivalent regulatory compliance.
Q: What is the voltage rating compatibility between these parts?
A: Both components are rated for a maximum reverse voltage of 30 V. The CMPSH-3A-TP meets or exceeds all voltage specifications of the MMBD1705.
Q: How does the Schottky technology in the CMPSH-3A-TP affect circuit behavior?
A: Schottky diodes exhibit lower forward voltage drop and faster switching response compared to standard diodes. In the CMPSH-3A-TP, forward voltage is reduced to 1 V at 100 mA (compared to 1.1 V at 50 mA in the MMBD1705). Reverse recovery time is longer (4 ns), which is typical for Schottky technology. Reverse leakage current is higher, also characteristic of Schottky implementation.
Q: Is the CMPSH-3A-TP suitable for applications requiring the original 50 mA current specification?
A: Yes. The CMPSH-3A-TP is rated for 100 mA per diode, which exceeds the 50 mA requirement of the MMBD1705. The substitute component operates within specification for all applications designed for the original part.
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