MJF31C Equivalent & Substitute Parts

Part Overview

The MJF31C is an NPN bipolar junction transistor (BJT) manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. This device is packaged in a TO-220-3 Full Pack through-hole configuration and is designed for general-purpose switching and amplification applications requiring 2 W power dissipation capability.

The MJF31C is classified as obsolete product status. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and new design requirements where this component is specified or functionally required.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	3	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 375 mA, 3 A	—
Current - Collector Cutoff (Max)	300	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3 A, 4 V	—
Power - Max	2	W
Frequency - Transition	3	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—

Substitute Part Grouping Explanation

Substitution of the MJF31C is determined by electrical and mechanical parameter equivalence. The following criteria establish functional interchangeability:

Electrical Parameters (Required Match):

Transistor type: NPN
Maximum collector current: 3 A
Maximum collector-emitter breakdown voltage: 100 V
Saturation voltage: 1.2 V @ 375 mA, 3 A
Maximum collector cutoff current: 300 µA
Minimum DC current gain: 10 @ 3 A, 4 V
Maximum power dissipation: 2 W
Transition frequency: 3 MHz
Operating temperature range: -65°C to 150°C

Mechanical Parameters (Required Match):

Mounting type: Through Hole
Package configuration: TO-220-3 Full Pack

The MJF31CG meets all specified electrical and mechanical parameters and is therefore classified as a direct substitute for the MJF31C.

Parameter Comparison

Parameter	MJF31C	MJF31CG	Match
Transistor Type	NPN	NPN	✓
Current - Collector (Ic) (Max)	3 A	3 A	✓
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	✓
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 375 mA, 3 A	1.2 V @ 375 mA, 3 A	✓
Current - Collector Cutoff (Max)	300 µA	300 µA	✓
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3 A, 4 V	10 @ 3 A, 4 V	✓
Power - Max	2 W	2 W	✓
Frequency - Transition	3 MHz	3 MHz	✓
Operating Temperature Range	-65 to 150 °C (TJ)	-65 to 150 °C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	✓

Engineering Selection Recommendations

MJF31CG is the recommended substitute for MJF31C applications.

Rationale:

The MJF31CG provides complete electrical and mechanical equivalence to the MJF31C across all specified parameters. Both devices are manufactured by onsemi and share identical electrical characteristics, including collector current rating, breakdown voltage, saturation voltage, current gain, power dissipation, and operating temperature range. Both utilize the TO-220-3 Full Pack through-hole package configuration, ensuring direct mechanical compatibility in existing circuit board layouts and thermal management designs.

Compliance Distinction:

The MJF31C is classified as RoHS non-compliant and obsolete product status. The MJF31CG is classified as ROHS3 compliant and active product status. For applications requiring RoHS compliance or long-term component availability, the MJF31CG is the appropriate selection. Both devices maintain REACH Unaffected status and EAR99 export classification.

Packaging Consideration:

The MJF31C is supplied in standard packaging, while the MJF31CG is supplied in tube packaging. This difference does not affect electrical or mechanical performance and is a logistics consideration only.

Frequently Asked Questions (FAQ)

Q: Can MJF31CG be used as a direct replacement for MJF31C in existing designs?

A: Yes. The MJF31CG meets all electrical and mechanical specifications of the MJF31C. Pin configuration, package footprint, and electrical performance are identical. Direct substitution is supported without circuit modification.

Q: What is the difference between MJF31C and MJF31CG?

A: The primary differences are product status and regulatory compliance. The MJF31C is obsolete and RoHS non-compliant. The MJF31CG is active product status and ROHS3 compliant. Electrical and mechanical specifications are identical.

Q: Are there any thermal management differences between these devices?

A: No. Both devices are rated for 2 W maximum power dissipation and operate across the same temperature range (-65°C to 150°C junction temperature). Thermal characteristics are equivalent.

Q: Does the TO-220-3 Full Pack configuration remain the same for both parts?

A: Yes. Both MJF31C and MJF31CG utilize the TO-220-3 Full Pack through-hole package. Physical dimensions, pin spacing, and mounting requirements are identical.

Q: What is the significance of the packaging difference (standard vs. tube)?

A: Packaging format (standard versus tube) affects component handling, storage, and automated assembly compatibility but does not impact electrical performance or mechanical fit. Selection depends on assembly process requirements.

Q: Are both parts suitable for high-frequency switching applications?

A: Both devices are rated for 3 MHz transition frequency. Applications requiring switching speeds at or below this frequency are supported by both parts.

Q: What is the minimum DC current gain for both devices?

A: Both MJF31C and MJF31CG specify a minimum DC current gain (hFE) of 10 at collector current of 3 A and collector-emitter voltage of 4 V.

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