MJD200 Equivalent & Substitute Parts Reference

Part Overview

The MJD200 is an NPN bipolar junction transistor manufactured by onsemi, rated for 25 V collector-emitter breakdown voltage and 5 A maximum collector current in a surface mount DPAK package. The device is classified as obsolete, making equivalent and substitute parts necessary for new designs and production continuity. This reference provides engineering-grade alternatives based on electrical and mechanical parameter compatibility.

Substiute Parts

MJD200
onsemiIn Stock: 5962MJD200 Datasheet
MJD200
Current Part
MJD200G
onsemiIn Stock: 1455MJD200G Datasheet
MJD200G
Direct
MJD2955G
onsemiIn Stock: 15479MJD2955G Datasheet
MJD2955G
Similar
2STD1665T4
STMicroelectronicsIn Stock: 36832STD1665T4 Datasheet
2STD1665T4
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MJD3055T4
STMicroelectronicsIn Stock: 3606MJD3055T4 Datasheet
MJD3055T4
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MJD44H11T4
STMicroelectronicsIn Stock: 32912MJD44H11T4 Datasheet
MJD44H11T4
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PHPT60406NYX
Nexperia USA Inc.In Stock: 3684PHPT60406NYX Datasheet
PHPT60406NYX
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Key Parameters

Parameter MJD200 Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 5 A
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A V
DC Current Gain (hFE) Min @ Ic, Vce 45 @ 2A, 1V
Power - Max 1.4 W
Frequency - Transition 65 MHz
Operating Temperature Range -65 to 150 °C
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK
Product Status Obsolete
RoHS Status Non-compliant

Substitute Part Grouping Explanation

Substitution of the MJD200 is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Transistor polarity (NPN type required)
  • Package type (DPAK surface mount required)
  • Collector current rating (minimum 5 A)
  • Collector-emitter breakdown voltage (minimum 25 V)
  • Power dissipation capability (minimum 1.4 W)

Substitution Categories:

Direct Equivalent: MJD200G (onsemi) — Identical electrical specifications with active product status and RoHS3 compliance. Packaging format differs (Tube vs. standard).

Functional Equivalents with Parameter Derating: Parts with higher voltage or current ratings that operate within the MJD200 design envelope. These include 2STD1665T4, MJD3055T4, and MJD44H11T4, all manufactured in DPAK package with NPN polarity and active status.

Alternative Package Solution: PHPT60406NYX (Nexperia) — NPN transistor with different package format (LFPAK56/Power-SO8) but compatible electrical performance for applications where package footprint can be modified.

Parameter Comparison

Part Number Manufacturer Transistor Type Ic Max (A) Vce Breakdown (V) Power Max (W) Frequency (MHz) Package Product Status RoHS Status
MJD200 onsemi NPN 5 25 1.4 65 DPAK Obsolete Non-compliant
MJD200G onsemi NPN 5 25 1.4 65 DPAK Active RoHS3 Compliant
2STD1665T4 STMicroelectronics NPN 6 65 15 DPAK Active RoHS3 Compliant
MJD3055T4 STMicroelectronics NPN 10 60 20 2 DPAK Active RoHS3 Compliant
MJD44H11T4 STMicroelectronics NPN 8 80 20 DPAK Active RoHS3 Compliant
PHPT60406NYX Nexperia USA Inc. NPN 6 40 1.35 153 LFPAK56 Active RoHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Recommended Primary Choice):

MJD200G is the preferred substitute. It maintains identical electrical specifications and mechanical compatibility with the original MJD200 while offering active product status and RoHS3 compliance. This part eliminates obsolescence risk and meets modern regulatory requirements without circuit redesign.

For Applications Requiring Higher Performance Margins:

2STD1665T4, MJD3055T4, and MJD44H11T4 are suitable when design specifications allow for higher voltage or current ratings. All three maintain DPAK package compatibility and NPN polarity. These parts provide enhanced power dissipation and voltage headroom, beneficial for applications with variable load conditions or thermal constraints. All are RoHS3 compliant and active products.

For Space-Constrained Designs:

PHPT60406NYX offers an alternative when DPAK footprint cannot be accommodated. This part requires PCB layout modification due to its LFPAK56/Power-SO8 package format. It provides higher transition frequency (153 MHz) and maintains NPN polarity with active status and RoHS3 compliance. Electrical performance is compatible within the MJD200 operating envelope.

Compliance Considerations:

All recommended substitutes are RoHS3 compliant and REACH unaffected, addressing regulatory requirements that the obsolete MJD200 does not meet. Selection should prioritize active product status to ensure long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can MJD200G be used as a direct drop-in replacement for MJD200?

A: Yes. MJD200G is electrically and mechanically identical to MJD200, with the same DPAK package, NPN polarity, 5 A collector current rating, and 25 V breakdown voltage. The primary differences are product status (active vs. obsolete) and RoHS compliance (RoHS3 vs. non-compliant).

Q: What is the difference between MJD200 and MJD200G packaging?

A: MJD200 is supplied in standard packaging, while MJD200G is supplied in Tube format. Both use the TO-252-3 DPAK package case. The packaging format affects handling and storage but does not impact electrical performance or PCB mounting.

Q: Can I use 2STD1665T4 or MJD3055T4 in place of MJD200?

A: These parts are functionally compatible for applications where the MJD200 operates below its maximum ratings. Both are NPN transistors in DPAK packages with collector current ratings exceeding 5 A and breakdown voltages exceeding 25 V. However, they have different saturation voltage characteristics and power dissipation capabilities. Circuit validation is necessary to confirm performance equivalence in your specific application.

Q: Why does PHPT60406NYX have a different package than MJD200?

A: PHPT60406NYX uses the LFPAK56/Power-SO8 package instead of DPAK. This package format provides different thermal and electrical characteristics. Selection of this part requires PCB redesign and is appropriate only when DPAK footprint cannot be used.

Q: Are all substitute parts RoHS compliant?

A: Yes. MJD200G, 2STD1665T4, MJD3055T4, MJD44H11T4, and PHPT60406NYX are all RoHS3 compliant. The original MJD200 is RoHS non-compliant, making substitution necessary for applications requiring regulatory compliance.

Q: What is the operating temperature range for substitute parts?

A: MJD200G maintains the same range as MJD200 (-65°C to 150°C). 2STD1665T4, MJD3055T4, and MJD44H11T4 operate to 150°C maximum junction temperature. PHPT60406NYX operates to 175°C maximum junction temperature, providing extended thermal capability.

Q: Can I use MJD2955G as a substitute for MJD200?

A: No. MJD2955G is a PNP transistor, while MJD200 is NPN. Polarity mismatch prevents direct substitution. PNP devices require opposite biasing and circuit configuration compared to NPN devices.

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