MJB41CT4 Equivalent & Substitute Parts

Part Overview

The MJB41CT4 is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 6 A maximum collector current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and production requirements. The part delivers 2 W maximum power dissipation with a 3 MHz transition frequency, suitable for general-purpose switching and amplification applications.

Substiute Parts

MJB41CT4
onsemiIn Stock: 1000MJB41CT4 Datasheet
MJB41CT4
Current Part
MJB41CT4G
onsemiIn Stock: 6955MJB41CT4G Datasheet
MJB41CT4G
Direct
FJB102TM
onsemiIn Stock: 2293FJB102TM Datasheet
FJB102TM
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 6 A
Collector-Emitter Breakdown Voltage (Max) 100 V
Power Dissipation (Max) 2 W
Transition Frequency 3 MHz
Operating Temperature Range −65 to 150 °C
Package Type D2PAK (TO-263-3)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the MJB41CT4 is determined by the following critical parameters: transistor type (NPN), collector-emitter breakdown voltage (100 V maximum), collector current rating (6 A maximum), package configuration (D2PAK surface mount), and operating temperature range (−65°C to 150°C).

The substitute parts are grouped into two categories:

Direct Equivalent: MJB41CT4G maintains identical electrical specifications and package type, differing only in product status (active versus obsolete) and packaging format (tape and reel versus bulk). This part is a direct functional replacement.

Similar Substitute: FJB102TM is a Darlington configuration NPN transistor with the same 100 V breakdown voltage and D2PAK package. While it exceeds the current and power ratings of the MJB41CT4, it operates within the same voltage class and thermal envelope, making it suitable for applications where higher current capability is beneficial or required.

Parameter Comparison

Parameter MJB41CT4 MJB41CT4G FJB102TM
Manufacturer onsemi onsemi onsemi
Transistor Type NPN NPN NPN - Darlington
Collector Current (Max) 6 A 6 A 8 A
Collector-Emitter Breakdown Voltage (Max) 100 V 100 V 100 V
Vce Saturation (Max) 1.5 V @ 600 mA, 6 A 1.5 V @ 600 mA, 6 A 2.5 V @ 80 mA, 8 A
Power Dissipation (Max) 2 W 2 W 80 W
Transition Frequency 3 MHz 3 MHz Not specified
Operating Temperature Range −65 to 150 °C −65 to 150 °C Up to 150 °C
Package Type D2PAK (TO-263-3) D2PAK (TO-263-3) D2PAK (TO-263-3)
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Obsolete Active Active
RoHS Compliance Non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

MJB41CT4G is the primary substitute for the obsolete MJB41CT4. Both parts share identical electrical specifications, thermal characteristics, and D2PAK packaging. The MJB41CT4G is currently in active production status with ROHS3 compliance certification, making it the preferred choice for new designs and production continuity. The part is available in tape and reel packaging format, standard for high-volume manufacturing operations.

FJB102TM serves as an alternative substitute when higher current capacity or power dissipation is required within the same voltage class and package footprint. The Darlington configuration provides significantly higher DC current gain (1000 minimum versus 15 minimum), lower collector cutoff current (50 µA versus 700 µA), and substantially higher power rating (80 W versus 2 W). This part is also ROHS3 compliant and actively produced. Selection of FJB102TM requires circuit validation to confirm compatibility with the higher saturation voltage (2.5 V versus 1.5 V) and Darlington characteristics.

Both substitute parts maintain the D2PAK surface mount package configuration, ensuring mechanical and thermal compatibility with existing PCB layouts designed for the MJB41CT4.

Frequently Asked Questions (FAQ)

Q: Can MJB41CT4G be used as a direct replacement for MJB41CT4?

A: Yes. MJB41CT4G is electrically and mechanically identical to MJB41CT4, with the same collector current (6 A), breakdown voltage (100 V), power rating (2 W), and D2PAK package. The primary differences are product status (active versus obsolete) and packaging format (tape and reel versus bulk). No circuit modifications are required.

Q: What are the key differences between MJB41CT4 and FJB102TM?

A: FJB102TM is a Darlington transistor with higher current rating (8 A versus 6 A), significantly higher power dissipation capability (80 W versus 2 W), and much higher DC current gain (1000 versus 15). The saturation voltage is higher (2.5 V versus 1.5 V). Both share the same 100 V breakdown voltage and D2PAK package. FJB102TM is suitable for applications requiring higher current or power handling within the same voltage class.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. MJB41CT4G and FJB102TM are both supplied in D2PAK (TO-263-3) surface mount packages, ensuring compatibility with PCB layouts designed for the MJB41CT4.

Q: What is the impact of using FJB102TM in a circuit designed for MJB41CT4?

A: FJB102TM can operate in circuits designed for MJB41CT4 provided the higher saturation voltage (2.5 V versus 1.5 V) and Darlington characteristics do not adversely affect circuit performance. The higher current and power ratings provide additional design margin. Circuit validation is necessary to confirm compatibility with specific application requirements.

Q: Are the substitute parts RoHS compliant?

A: MJB41CT4G and FJB102TM are both ROHS3 compliant. The original MJB41CT4 is RoHS non-compliant. Compliance certification should be verified for applications subject to RoHS regulatory requirements.

Q: What is the moisture sensitivity level for these parts?

A: All three parts (MJB41CT4, MJB41CT4G, and FJB102TM) have a moisture sensitivity level (MSL) of 1, indicating unlimited shelf life without moisture control requirements.

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