MBR25100CT Equivalent & Substitute Parts

Part Overview

The MBR25100CT is a Schottky diode array with 1 pair common cathode configuration rated for 100 V DC reverse voltage and 25 A average rectified current per diode. The device is packaged in TO-220-3 through-hole format and features fast recovery characteristics with maximum forward voltage of 920 mV at 25 A. The MBR25100CT is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs.

Substiute Parts

MBR25100CT
Taiwan Semiconductor CorporationIn Stock: 2994MBR25100CT Datasheet
MBR25100CT
Current Part
MBR25100CTHC0G
Taiwan Semiconductor CorporationIn Stock: 1089MBR25100CTHC0G Datasheet
MBR25100CTHC0G
Parametric Equivalent
MBR10100CT-BP
Micro Commercial CoIn Stock: 5907MBR10100CT-BP Datasheet
MBR10100CT-BP
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MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 3178MBR10100CT-E3/4W Datasheet
MBR10100CT-E3/4W
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MBR10100CT-G1
Diodes IncorporatedIn Stock: 1219MBR10100CT-G1 Datasheet
MBR10100CT-G1
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MBR10H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 3669MBR10H100CT-E3/45 Datasheet
MBR10H100CT-E3/45
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MBR20100CT-BP
Micro Commercial CoIn Stock: 5084MBR20100CT-BP Datasheet
MBR20100CT-BP
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MBR20100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8817MBR20100CT-E3/4W Datasheet
MBR20100CT-E3/4W
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MBR20100CT-G1
Diodes IncorporatedIn Stock: 1781MBR20100CT-G1 Datasheet
MBR20100CT-G1
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MBR20100CT-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 2244MBR20100CT-M3/4W Datasheet
MBR20100CT-M3/4W
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MBR20H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1625MBR20H100CT-E3/45 Datasheet
MBR20H100CT-E3/45
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MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1260MBR20H100CTG-E3/45 Datasheet
MBR20H100CTG-E3/45
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MBR30100CT-G1
Diodes IncorporatedIn Stock: 1064MBR30100CT-G1 Datasheet
MBR30100CT-G1
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MBR30H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1669MBR30H100CT-E3/45 Datasheet
MBR30H100CT-E3/45
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MBRB41H100CT-1G
Fairchild SemiconductorIn Stock: 2857MBRB41H100CT-1G Datasheet
MBRB41H100CT-1G
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NTSV20100CTG
onsemiIn Stock: 1487NTSV20100CTG Datasheet
NTSV20100CTG
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NTSV30H100CTG
onsemiIn Stock: 2272NTSV30H100CTG Datasheet
NTSV30H100CTG
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SDT20100CT
Diodes IncorporatedIn Stock: 1338SDT20100CT Datasheet
SDT20100CT
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STPS60H100CT
STMicroelectronicsIn Stock: 90375STPS60H100CT Datasheet
STPS60H100CT
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V20100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8760V20100C-E3/4W Datasheet
V20100C-E3/4W
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V20100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 20261V20100C-M3/4W Datasheet
V20100C-M3/4W
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V20100R-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1326V20100R-E3/4W Datasheet
V20100R-E3/4W
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V20M100M-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 112127V20M100M-E3/4W Datasheet
V20M100M-E3/4W
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V30100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 6167V30100C-E3/4W Datasheet
V30100C-E3/4W
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V30100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 4971V30100C-M3/4W Datasheet
V30100C-M3/4W
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V40100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 90547V40100C-E3/4W Datasheet
V40100C-E3/4W
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V40100G-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1184V40100G-E3/4W Datasheet
V40100G-E3/4W
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V40100G-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1034V40100G-M3/4W Datasheet
V40100G-M3/4W
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V40100K-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1004V40100K-E3/4W Datasheet
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V60100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 44133V60100C-E3/4W Datasheet
V60100C-E3/4W
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V60100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 10296V60100C-M3/4W Datasheet
V60100C-M3/4W
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VS-43CTQ100HN3
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Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 25 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 25 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MBR25100CT is determined by the following critical parameters:

Primary Substitution Criteria:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • RoHS Status: ROHS3 Compliant

Current Rating Considerations: Substitute parts are grouped by average rectified current capacity. The MBR25100CT operates at 25 A per diode. Parts with lower current ratings (5 A, 10 A) function as substitutes in applications where the full 25 A capacity is not required. Parts with equal or higher current ratings provide direct replacement capability.

Parametric Equivalent: The MBR25100CTHC0G from Taiwan Semiconductor Corporation maintains identical electrical specifications to the MBR25100CT, including 25 A current rating, 100 V reverse voltage, and 920 mV forward voltage at 25 A. This part is currently active in production and carries AEC-Q101 automotive qualification.

Similar Manufacturer Parts: Substitute parts from Micro Commercial Co, Vishay General Semiconductor, and Diodes Incorporated are listed by current rating tier. These parts maintain the same 100 V reverse voltage rating and TO-220-3 package but differ in average rectified current capacity and forward voltage characteristics.

Parameter Comparison

Manufacturer Part Number Manufacturer Io (per Diode) Vr (Max) Vf (Max) @ If Ir @ Vr Tj (Operating) Product Status Grade
MBR25100CT Taiwan Semiconductor Corporation 25 A 100 V 920 mV @ 25 A 100 µA @ 100 V -55°C ~ 150°C Discontinued Standard
MBR25100CTHC0G Taiwan Semiconductor Corporation 25 A 100 V 920 mV @ 25 A 100 µA @ 100 V -55°C ~ 150°C Active Automotive (AEC-Q101)
MBR20100CT-BP Micro Commercial Co 10 A 100 V 950 mV @ 20 A 150 µA @ 100 V -55°C ~ 150°C Active Standard
MBR20100CT-E3/4W Vishay General Semiconductor - Diodes Division 10 A 100 V 800 mV @ 10 A 100 µA @ 100 V -65°C ~ 150°C Active Standard
MBR20100CT-G1 Diodes Incorporated 10 A 100 V 840 mV @ 10 A 50 µA @ 100 V -55°C ~ 175°C Active Automotive (AEC-Q101)
MBR20100CT-M3/4W Vishay General Semiconductor - Diodes Division 10 A 100 V 800 mV @ 10 A 100 µA @ 100 V -65°C ~ 150°C Active Standard
MBR20H100CT-E3/45 Vishay General Semiconductor - Diodes Division 10 A 100 V 770 mV @ 10 A 4.5 µA @ 100 V -65°C ~ 150°C Active Standard
MBR10100CT-BP Micro Commercial Co 10 A 100 V 850 mV @ 5 A 200 µA @ 100 V -55°C ~ 150°C Active Standard
MBR10100CT-E3/4W Vishay General Semiconductor - Diodes Division 5 A 100 V 850 mV @ 5 A 100 µA @ 100 V -65°C ~ 150°C Active Standard
MBR10100CT-G1 Diodes Incorporated 5 A 100 V 840 mV @ 5 A 50 µA @ 100 V -55°C ~ 150°C Active Automotive (AEC-Q101)
MBR10H100CT-E3/45 Vishay General Semiconductor - Diodes Division 5 A 100 V 760 mV @ 5 A 3.5 µA @ 100 V -65°C ~ 175°C Active Standard

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

The MBR25100CTHC0G from Taiwan Semiconductor Corporation is the parametric equivalent to the MBR25100CT. This part maintains identical electrical specifications including 25 A average rectified current, 100 V reverse voltage, and 920 mV forward voltage at 25 A. The MBR25100CTHC0G is currently in active production status with 1027 units in stock. This part carries AEC-Q101 automotive qualification, providing enhanced reliability for applications requiring automotive-grade components. Selection of MBR25100CTHC0G eliminates the need for circuit redesign or thermal management adjustments.

Substitutes for Current-Limited Applications:

For applications where the full 25 A capacity is not required, the following parts provide functional substitution:

10 A Current Rating Tier:

  • MBR20100CT-E3/4W (Vishay) and MBR20100CT-M3/4W (Vishay) offer lower forward voltage (800 mV @ 10 A) compared to the original part, resulting in reduced power dissipation. Extended operating temperature range to -65°C supports broader environmental requirements.
  • MBR20100CT-G1 (Diodes Incorporated) provides AEC-Q101 automotive qualification with extended upper temperature limit to 175°C and reduced reverse leakage current (50 µA @ 100 V).
  • MBR20100CT-BP (Micro Commercial Co) maintains standard specifications with 10 A capacity and is available in high inventory (5013 units).

5 A Current Rating Tier:

  • MBR10H100CT-E3/45 (Vishay) features the lowest forward voltage (760 mV @ 5 A) and lowest reverse leakage current (3.5 µA @ 100 V) among all listed substitutes, with extended upper temperature limit to 175°C.
  • MBR10100CT-G1 (Diodes Incorporated) provides AEC-Q101 automotive qualification with reduced reverse leakage (50 µA @ 100 V).
  • MBR10100CT-E3/4W (Vishay) offers extended lower temperature limit to -65°C with standard electrical characteristics.

Compliance and Certification:

All listed parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the original MBR25100CT. Parts designated with AEC-Q101 qualification are suitable for automotive applications requiring enhanced reliability screening and qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can the MBR25100CTHC0G directly replace the MBR25100CT without circuit modification?

A: Yes. The MBR25100CTHC0G maintains identical electrical specifications including 25 A average rectified current, 100 V reverse voltage, 920 mV forward voltage at 25 A, and -55°C to 150°C operating temperature range. The part is packaged in TO-220-3 through-hole format with identical pinout. No circuit modification is required.

Q: What is the difference between the MBR25100CT and lower-current alternatives like the MBR20100CT series?

A: The primary difference is average rectified current capacity. The MBR25100CT is rated for 25 A per diode, while the MBR20100CT series is rated for 10 A per diode. Lower-current parts are suitable only for applications where the circuit current requirement does not exceed the substitute part's rating. Exceeding the current rating results in excessive power dissipation and potential device failure.

Q: Are there performance differences between the MBR20100CT-E3/4W and MBR20100CT-M3/4W?

A: No. Both parts from Vishay General Semiconductor maintain identical electrical specifications: 10 A average rectified current, 100 V reverse voltage, 800 mV forward voltage at 10 A, and -65°C to 150°C operating temperature range. Both are part of the TMBS® series. Selection between these parts is based on packaging availability and inventory status.

Q: What does AEC-Q101 qualification indicate?

A: AEC-Q101 is an automotive electronics qualification standard. Parts carrying this qualification have undergone enhanced reliability screening, temperature cycling, and stress testing. AEC-Q101 qualified parts are suitable for automotive applications and applications requiring automotive-grade reliability standards. Standard-grade parts without this qualification are suitable for general industrial and consumer applications.

Q: Can a 5 A rated part substitute for a 25 A application?

A: No. The 5 A rated parts (MBR10100CT series) are rated for maximum 5 A average rectified current. Using a 5 A part in a 25 A application results in excessive current density, thermal stress, and device failure. Current rating must equal or exceed the application requirement.

Q: What is the significance of forward voltage differences between substitute parts?

A: Forward voltage directly affects power dissipation in the diode. Lower forward voltage results in lower power loss and reduced heat generation. For example, MBR10H100CT-E3/45 operates at 760 mV @ 5 A compared to 850 mV @ 5 A for MBR10100CT-E3/4W. In high-current or high-frequency applications, lower forward voltage reduces thermal management requirements. However, forward voltage differences are only relevant when comparing parts with identical current ratings.

Q: Are all listed parts available in the same TO-220-3 package?

A: Yes. All listed parts are packaged in TO-220-3 through-hole format with identical mechanical dimensions and pinout. This ensures mechanical compatibility with existing PCB layouts and thermal management solutions. Packaging designation may vary slightly (TO-220-3 or TO-220AB) but refers to the same physical package.

Q: What is the operating temperature range difference between the MBR25100CT and MBR20100CT-G1?

A: The MBR25100CT operates from -55°C to 150°C. The MBR20100CT-G1 operates from -55°C to 175°C, providing a 25°C higher upper temperature limit. This extended range is beneficial for applications in high-temperature environments or where thermal margin is critical. However, this advantage is only relevant if the application current requirement does not exceed 10 A.

Q: How do reverse leakage current differences affect part selection?

A: Reverse leakage current represents unwanted current flow when the diode is reverse-biased. Lower reverse leakage current reduces standby power consumption and heat generation. Parts with significantly lower reverse leakage (such as MBR10H100CT-E3/45 at 3.5 µA @ 100 V compared to 100 µA @ 100 V for standard parts) are beneficial in low-power or precision applications. However, this parameter is secondary to current and voltage ratings in determining substitutability.

Q: Is the MBR25100CT still available for purchase?

A: The MBR25100CT is discontinued at DiGi Electronics. The parametric equivalent MBR25100CTHC0G is currently in active production with 1027 units in stock. For new designs or production requirements, MBR25100CTHC0G is the recommended replacement source.

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