KSH112TM Equivalent & Substitute Parts

Part Overview

The KSH112TM is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. The device is housed in a DPAK (TO-252-3) surface mount package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation.

The KSH112TM is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production, repair, and redesign activities. Active alternatives with identical or superior electrical characteristics are available from onsemi and other manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Collector Current (Max)	2	A
Collector-Emitter Breakdown Voltage (Max)	100	V
Vce Saturation (Max)	3 V @ 40 mA, 4 A	—
Collector Cutoff Current (Max)	20	µA
DC Current Gain (hFE Min)	1000 @ 2 A, 3 V	—
Transition Frequency	25	MHz
Power Dissipation (Max)	1.75	W
Operating Temperature (Max)	150	°C
Package Type	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the KSH112TM are classified into three categories based on substitution relationship and electrical equivalence:

Direct Manufacturer Substitutes (onsemi): Parts MJD112T4G, NJVMJD112G, and NJVMJD112T4G are manufactured by onsemi and share identical electrical specifications with the KSH112TM. These parts maintain the same collector current (2 A), collector-emitter breakdown voltage (100 V), saturation voltage, DC current gain, and transition frequency. All are housed in the DPAK package and are RoHS3 compliant. The primary differences are power dissipation rating (20 W versus 1.75 W for some variants), operating temperature range, and packaging format (Cut Tape, Tube, or Tape & Reel).

Cross-Manufacturer Direct Substitute (STMicroelectronics): Part MJD112T4 manufactured by STMicroelectronics is electrically equivalent to the KSH112TM with identical collector current, breakdown voltage, saturation voltage, DC current gain, and transition frequency. This part is rated for 20 W power dissipation and is available in Cut Tape & Digi-Reel packaging.

Parametric Equivalent (onsemi): Part MJD112RLG is classified as a parametric equivalent. It maintains all critical electrical specifications identical to the KSH112TM, including collector current, breakdown voltage, saturation voltage, DC current gain, and transition frequency. Power dissipation is rated at 1.75 W, matching the original part.

Similar Part (Rohm Semiconductor): Part 2SD1980TL is classified as a similar part with the same collector current and breakdown voltage ratings. However, this part exhibits differences in saturation voltage specifications, collector cutoff current, DC current gain test conditions, power dissipation (10 W), and transition frequency (not specified). The 2SD1980TL is classified as "Not For New Designs" and uses a CPT3 package variant.

Substitution eligibility is determined by matching the following critical parameters: transistor type (NPN Darlington), collector current (2 A), collector-emitter breakdown voltage (100 V), DC current gain (1000 minimum), and DPAK surface mount package compatibility.

Parameter Comparison

Parameter	KSH112TM	MJD112T4G	NJVMJD112G	NJVMJD112T4G	MJD112RLG	MJD112T4	2SD1980TL
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	STMicroelectronics	Rohm Semiconductor
Product Status	Obsolete	Active	Active	Active	Active	Active	Not For New Designs
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington
Ic (Max)	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Vce Breakdown (Max)	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Vce Saturation (Max)	3 V @ 40 mA, 4 A	3 V @ 40 mA, 4 A	3 V @ 40 mA, 4 A	3 V @ 40 mA, 4 A	3 V @ 40 mA, 4 A	3 V @ 40 mA, 4 A	1.5 V @ 1 mA, 1 A
Icbo (Max)	20 µA	20 µA	20 µA	20 µA	20 µA	20 µA	10 µA
hFE (Min)	1000 @ 2 A, 3 V	1000 @ 2 A, 3 V	1000 @ 2 A, 3 V	1000 @ 2 A, 3 V	1000 @ 2 A, 3 V	1000 @ 2 A, 3 V	1000 @ 1 A, 2 V
Frequency - Transition	25 MHz	25 MHz	25 MHz	25 MHz	25 MHz	25 MHz	Not Specified
Power (Max)	1.75 W	20 W	1.75 W	20 W	1.75 W	20 W	10 W
Operating Temperature (Max)	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Operating Temperature (Min)	Not Specified	-65 °C	-65 °C	-65 °C	-65 °C	Not Specified	Not Specified
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Packaging Format	Not Specified	Cut Tape & Digi-Reel	Tube	Tape & Reel	Cut Tape & Digi-Reel	Cut Tape & Digi-Reel	Cut Tape & Digi-Reel

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs and Replacements):

MJD112T4G, NJVMJD112G, NJVMJD112T4G, and MJD112T4 are the preferred substitutes for the obsolete KSH112TM. All four parts are classified as active products with full production support. These parts maintain electrical equivalence across all critical parameters: collector current, breakdown voltage, saturation voltage, DC current gain, and transition frequency. All are RoHS3 compliant and carry MSL rating 1 (unlimited moisture sensitivity).

MJD112T4G and NJVMJD112T4G offer enhanced power dissipation ratings (20 W) compared to the original KSH112TM (1.75 W), providing thermal margin in applications with higher power requirements. NJVMJD112G and MJD112RLG maintain the original 1.75 W power rating for applications with identical thermal constraints.

The onsemi parts (MJD112T4G, NJVMJD112G, NJVMJD112T4G) provide direct manufacturer continuity and are available in multiple packaging formats (Cut Tape & Digi-Reel, Tube, Tape & Reel) to accommodate various procurement and assembly workflows.

MJD112T4 from STMicroelectronics is a cross-manufacturer equivalent suitable for applications where multi-source qualification is required. This part is active and carries identical electrical specifications with 20 W power dissipation.

Secondary Substitute (Limited Application):

MJD112RLG is a parametric equivalent from onsemi with identical electrical specifications and 1.75 W power rating. This part is suitable for direct replacement in applications with thermal constraints matching the original design.

Not Recommended for New Designs:

2SD1980TL from Rohm Semiconductor is classified as "Not For New Designs" and exhibits parametric differences in saturation voltage test conditions, collector cutoff current, and DC current gain measurement conditions. This part is suitable only for legacy system maintenance where design continuity with existing 2SD1980TL implementations is required.

Frequently Asked Questions (FAQ)

Q: Can MJD112T4G be used as a direct replacement for KSH112TM in existing designs?

A: Yes. MJD112T4G is electrically equivalent to KSH112TM across all critical parameters: collector current (2 A), collector-emitter breakdown voltage (100 V), saturation voltage (3 V @ 40 mA, 4 A), DC current gain (1000 minimum), and transition frequency (25 MHz). Both devices use the DPAK surface mount package. MJD112T4G is an active product with superior power dissipation rating (20 W versus 1.75 W), providing additional thermal margin.

Q: What is the difference between NJVMJD112G and NJVMJD112T4G?

A: Both parts are manufactured by onsemi and are electrically equivalent to KSH112TM. The primary differences are power dissipation rating and packaging format. NJVMJD112G is rated for 1.75 W and supplied in Tube packaging. NJVMJD112T4G is rated for 20 W and supplied in Tape & Reel packaging. Both maintain identical electrical specifications and operating temperature range (-65°C to 150°C).

Q: Why does MJD112T4 from STMicroelectronics have a different operating temperature specification than the onsemi alternatives?

A: MJD112T4 specifies a maximum operating temperature of 150°C without a minimum temperature specification, whereas onsemi parts specify -65°C to 150°C. Both parts are rated for identical maximum junction temperature (150°C). The onsemi specification provides explicit minimum temperature rating for applications requiring operation at low temperatures. For applications operating within 0°C to 150°C, both parts are functionally equivalent.

Q: Is 2SD1980TL a suitable replacement for KSH112TM?

A: 2SD1980TL shares the same collector current (2 A) and collector-emitter breakdown voltage (100 V) as KSH112TM. However, this part exhibits differences in saturation voltage test conditions (1.5 V @ 1 mA, 1 A versus 3 V @ 40 mA, 4 A), collector cutoff current (10 µA versus 20 µA), and DC current gain measurement conditions (1 A, 2 V versus 2 A, 3 V). Additionally, 2SD1980TL is classified as "Not For New Designs" and uses a CPT3 package variant. This part is suitable only for legacy system maintenance where existing 2SD1980TL implementations require replacement.

Q: What packaging formats are available for KSH112TM substitutes?

A: Substitute parts are available in multiple packaging formats: Cut Tape & Digi-Reel (MJD112T4G, MJD112RLG, MJD112T4, 2SD1980TL), Tube (NJVMJD112G), and Tape & Reel (NJVMJD112T4G). All parts use the DPAK (TO-252-3) surface mount package with identical pin configuration and PCB footprint. Packaging format selection depends on procurement volume and assembly process requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (MJD112T4G, NJVMJD112G, NJVMJD112T4G, MJD112RLG, MJD112T4, and 2SD1980TL) are RoHS3 compliant with MSL rating 1 (unlimited moisture sensitivity). All parts are REACH unaffected and carry ECCN classification EAR99.

Q: What is the advantage of selecting a substitute with higher power dissipation rating (20 W versus 1.75 W)?

A: Higher power dissipation rating provides thermal margin in applications where junction temperature may approach design limits. Parts rated for 20 W (MJD112T4G, NJVMJD112T4G, MJD112T4) can operate at higher power levels without thermal derating compared to the original 1.75 W rating. For applications operating within the original 1.75 W thermal envelope, both 1.75 W and 20 W rated parts are functionally equivalent. Selection of higher power rating is beneficial for applications with marginal thermal design or future design evolution requiring increased power handling.

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