KSC945LTA Equivalent & Substitute Parts

Part Overview

The KSC945LTA is a Bipolar (BJT) NPN transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a 50 V collector-emitter breakdown voltage, 150 mA maximum collector current, and 250 mW power dissipation in a Through Hole TO-92-3 package. The KSC945LTA is classified as Obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility while offering current availability and active product status.

Substiute Parts

KSC945LTA
onsemiIn Stock: 1022KSC945LTA Datasheet
KSC945LTA
Current Part
KSC945CYTA
onsemiIn Stock: 10500KSC945CYTA Datasheet
KSC945CYTA
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
Power - Max 250 mW
Frequency - Transition 300 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Substitute Part Grouping Explanation

Substitute parts for the KSC945LTA are identified based on strict electrical and mechanical parameter matching. The substitution criteria include:

Electrical Parameters:

  • Transistor Type: NPN
  • Maximum Collector Current (Ic): 150 mA
  • Maximum Collector-Emitter Breakdown Voltage (Vce(BR)CEO): 50 V
  • Vce Saturation: 300mV @ 10mA, 100mA
  • Maximum Collector Cutoff Current (ICBO): 100 nA
  • Maximum Power Dissipation: 250 mW
  • Transition Frequency: 300 MHz
  • Maximum Operating Temperature: 150°C

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package: TO-92-3 (TO-226AA) Formed Leads

Parts meeting all these criteria are classified as direct electrical and mechanical equivalents. Variations in DC Current Gain (hFE) do not disqualify substitution when all other parameters remain within specification, as gain variations are common across transistor production batches and do not affect basic switching functionality in most applications.

Parameter Comparison

Parameter KSC945LTA KSC945CYTA Unit
Manufacturer onsemi onsemi
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 150 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 1mA, 6V 120 @ 1mA, 6V
Power - Max 250 250 mW
Frequency - Transition 300 300 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The KSC945CYTA is a direct substitute for the KSC945LTA based on matching electrical and mechanical specifications. Both devices are manufactured by onsemi and share identical ratings for collector current, breakdown voltage, saturation characteristics, power dissipation, and transition frequency.

Product Status Consideration: The KSC945LTA is classified as Obsolete, while the KSC945CYTA maintains Active product status. For new designs and production continuity, the KSC945CYTA is the appropriate selection.

Compliance Status: The KSC945CYTA carries RoHS3 Compliance certification, whereas the KSC945LTA does not specify RoHS compliance. Both parts maintain REACH Unaffected status and EAR99 export classification.

DC Current Gain Variation: The KSC945CYTA specifies a minimum DC Current Gain (hFE) of 120 @ 1mA, 6V, compared to 350 @ 1mA, 6V for the KSC945LTA. This difference reflects normal production variation within the KSC945 series. Circuit designs relying on specific gain values require verification against the lower hFE specification of the KSC945CYTA.

Packaging: Both parts utilize identical Through Hole TO-92-3 (TO-226AA) Formed Leads packaging, ensuring direct mechanical compatibility in existing PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the KSC945CYTA directly replace the KSC945LTA in existing designs?

A: Yes. The KSC945CYTA meets all electrical and mechanical specifications of the KSC945LTA. Both devices share identical maximum ratings for collector current (150 mA), breakdown voltage (50 V), power dissipation (250 mW), and package configuration (TO-92-3). The primary difference is product status: KSC945CYTA is Active while KSC945LTA is Obsolete.

Q: What is the significance of the DC Current Gain (hFE) difference between these parts?

A: The KSC945LTA specifies hFE (Min) of 350 @ 1mA, 6V, while the KSC945CYTA specifies 120 @ 1mA, 6V. This variation is within normal manufacturing tolerance for the KSC945 series. Circuits designed for switching applications with adequate base drive are unaffected. Circuits requiring specific gain characteristics must be evaluated against the lower hFE specification of the KSC945CYTA.

Q: Are the packages identical between KSC945LTA and KSC945CYTA?

A: Yes. Both parts use Through Hole TO-92-3 (TO-226AA) Formed Leads packaging. PCB layouts and mechanical mounting are directly compatible.

Q: What is the difference between the packaging designations CT and the main part?

A: CT (Cut Tape) refers to the supplier packaging format for the KSC945CYTA. This is a distribution method and does not affect the component itself or its electrical performance. The actual device package remains TO-92-3.

Q: Are there compliance differences between these parts?

A: The KSC945CYTA carries RoHS3 Compliance certification. The KSC945LTA does not specify RoHS compliance. Both parts maintain REACH Unaffected status and EAR99 export classification. For applications requiring RoHS compliance, the KSC945CYTA is the appropriate selection.

Q: Why is the KSC945LTA classified as Obsolete?

A: Obsolete status indicates the part is no longer in active production. The KSC945CYTA, as an Active product from the same manufacturer and series, provides continuity for applications requiring NPN transistors with 50 V, 150 mA specifications.

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