J113_D75Z JFET N-Channel Equivalent & Substitute Parts

Part Overview

The J113_D75Z is an N-Channel JFET transistor manufactured by onsemi, rated for 35 V breakdown voltage with 625 mW power dissipation in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The J113_D75Z remains available in inventory (692 pcs), but substitute parts with active product status provide long-term availability assurance.

Substiute Parts

J113_D75Z

onsemiIn Stock: 789J113_D75Z Datasheet

Current PartRFQ

MMBFJ113

onsemiIn Stock: 55898MMBFJ113 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the J113_D75Z is determined by electrical parameter equivalence across the following criteria:

Electrical Matching Parameters:

• FET Type: N-Channel (required match)
• Voltage - Breakdown (V(BR)GSS): 35 V (required match)
• Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V (required match)
• Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA (required match)
• Resistance - RDS(On): 100 Ohms (required match)
• Operating Temperature Range: -55°C to 150°C (required match)

Package Consideration: The J113_D75Z uses a through-hole TO-92-3 package. Substitute parts may employ different mounting technologies (surface mount) provided all electrical parameters remain equivalent. Package selection depends on circuit board design and assembly capabilities.

Parameter Comparison

Engineering Selection Recommendations

MMBFJ113 as Substitute:

The MMBFJ113 provides electrical equivalence to the J113_D75Z across all critical parameters: breakdown voltage, drain current, cutoff voltage, and on-resistance. Both devices are manufactured by onsemi and share identical thermal operating range.

Product Status Advantage: The MMBFJ113 carries active product status, ensuring continued availability and manufacturing support. The J113_D75Z is classified as obsolete.

Power Dissipation Consideration: The MMBFJ113 is rated for 350 mW maximum power dissipation compared to 625 mW for the J113_D75Z. Circuit designs must confirm that actual power dissipation remains within the 350 mW limit of the substitute device.

Compliance Status: Both devices are REACH Unaffected and classified under ECCN EAR99. The MMBFJ113 carries RoHS3 compliance certification.

Package Transition: Selection between through-hole (TO-92-3) and surface-mount (SOT-23-3) packaging depends on circuit board design and manufacturing process. Electrical performance is independent of package selection.

Frequently Asked Questions (FAQ)

Q: Can MMBFJ113 directly replace J113_D75Z in all applications?

A: Electrical parameters are equivalent. Substitution is valid provided circuit power dissipation does not exceed 350 mW. Package differences (through-hole vs. surface-mount) require board design and assembly process compatibility assessment.

Q: What is the primary reason for seeking a substitute for J113_D75Z?

A: The J113_D75Z is classified as obsolete. The MMBFJ113 provides identical electrical performance with active product status and assured long-term availability.

Q: Are there compliance or certification differences between these parts?

A: Both devices are REACH Unaffected and EAR99 classified. The MMBFJ113 additionally carries RoHS3 compliance certification. Both devices have unlimited moisture sensitivity level (MSL 1).

Q: How do the power ratings differ?

A: J113_D75Z is rated 625 mW; MMBFJ113 is rated 350 mW. Designs must verify that actual circuit power dissipation remains within 350 mW when using the substitute.

Q: What package options are available?

A: J113_D75Z uses through-hole TO-92-3 packaging. MMBFJ113 uses surface-mount SOT-23-3 packaging. Package selection depends on circuit board design and manufacturing capabilities.

Q: Are both devices from the same manufacturer?

A: Yes, both J113_D75Z and MMBFJ113 are manufactured by onsemi.