IXTU2N80P N-Channel 800V 2A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTU2N80P is an N-Channel 800V 2A MOSFET manufactured by IXYS in the TO-251AA package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The IXTU2N80P operates across a temperature range of -55°C to 150°C and delivers 70W maximum power dissipation, making it suitable for high-voltage switching applications requiring moderate current handling.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	2	A
On-State Resistance (Rds On) @ 1A, 10V	6	Ohm
Gate Threshold Voltage (Vgs(th)) @ 50µA	5.5	V
Gate Charge (Qg) @ 10V	10.6	nC
Input Capacitance (Ciss) @ 25V	440	pF
Power Dissipation (Max)	70	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-251AA	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTU2N80P is determined by the following critical parameters:

Voltage Rating (Vdss): All substitute parts must maintain the 800V drain-to-source voltage specification to ensure safe operation in high-voltage circuits.

Current Rating (Id): Substitute parts must support a minimum continuous drain current of 2A at 25°C. Parts with higher current ratings provide design margin and are acceptable.

Package and Mounting: All substitutes must use the TO-251AA package with through-hole mounting to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: All substitutes must support the full -55°C to 150°C temperature range.

Gate Drive Voltage: All substitutes operate at 10V gate drive voltage, maintaining compatibility with existing gate driver circuits.

Substitute parts are grouped into two categories based on electrical performance characteristics:

Category A (Direct Replacement): STU2N80K5 matches the IXTU2N80P in voltage rating, current rating, and package, with improved on-state resistance and reduced gate charge.

Category B (Enhanced Performance): STD3NK80Z-1 and STD4NK80Z-1 provide higher current ratings (2.5A and 3A respectively) while maintaining the 800V voltage specification, offering increased design margin for the same package footprint.

Category C (Voltage Trade-off): IRFU1N60APBF operates at 600V, reducing voltage headroom by 200V, and supports only 1.4A continuous current, making it suitable only for applications with reduced voltage requirements.

Parameter Comparison

Parameter	IXTU2N80P	STU2N80K5	STD3NK80Z-1	STD4NK80Z-1	IRFU1N60APBF
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	Vishay Siliconix
Vdss (V)	800	800	800	800	600
Id @ 25°C (A)	2	2	2.5	3	1.4
Rds On @ 10V (Ohm)	6 @ 1A	4.5 @ 1A	4.5 @ 1.25A	3.5 @ 1.5A	7 @ 840mA
Vgs(th) (V)	5.5 @ 50µA	5 @ 100µA	4.5 @ 50µA	4.5 @ 50µA	4 @ 250µA
Gate Charge Qg (nC)	10.6 @ 10V	9.5 @ 10V	19 @ 10V	22.5 @ 10V	14 @ 10V
Ciss (pF)	440 @ 25V	105 @ 100V	485 @ 25V	575 @ 25V	229 @ 25V
Power Dissipation (W)	70	45	70	80	36
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-251AA	TO-251 (IPAK)	TO-251 (IPAK)	TO-251 (IPAK)	TO-251AA
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: STU2N80K5

The STU2N80K5 is the recommended direct replacement for the IXTU2N80P. Both devices share identical voltage (800V) and current (2A) ratings with compatible TO-251 packaging. The STU2N80K5 is manufactured by STMicroelectronics and holds Active product status, ensuring long-term availability. This part demonstrates improved electrical characteristics with reduced on-state resistance (4.5Ohm versus 6Ohm) and lower gate charge (9.5nC versus 10.6nC), resulting in lower switching losses and improved thermal performance. The STU2N80K5 is ROHS3 compliant and carries REACH Unaffected status, meeting modern environmental and regulatory requirements.

Secondary Substitutes: STD3NK80Z-1 and STD4NK80Z-1

The STD3NK80Z-1 and STD4NK80Z-1 are suitable alternatives when higher current capacity is required. Both maintain the 800V voltage specification and TO-251 package compatibility. The STD3NK80Z-1 supports 2.5A continuous current with 4.5Ohm on-state resistance, while the STD4NK80Z-1 provides 3A continuous current with 3.5Ohm on-state resistance. Both devices are Active products from STMicroelectronics with ROHS3 compliance. These parts are appropriate for designs requiring increased current margin or reduced conduction losses.

Alternative Substitute: IRFU1N60APBF

The IRFU1N60APBF from Vishay Siliconix is a functional alternative only for applications where the 800V voltage specification can be reduced to 600V. This device supports 1.4A continuous current, which is below the IXTU2N80P specification. The IRFU1N60APBF is Active and ROHS3 compliant. This part is suitable for lower-voltage circuit variants or as a secondary source option when primary substitutes are unavailable.

Frequently Asked Questions (FAQ)

Q: Can the STU2N80K5 be used as a direct replacement for the IXTU2N80P without circuit modifications?

A: Yes. The STU2N80K5 maintains identical voltage (800V) and current (2A) ratings with compatible TO-251 packaging. No circuit modifications are required. The improved electrical characteristics (lower Rds On and gate charge) provide enhanced performance without affecting circuit operation.

Q: What is the difference between the STD3NK80Z-1 and STD4NK80Z-1?

A: Both devices maintain 800V voltage rating and TO-251 packaging. The STD3NK80Z-1 supports 2.5A continuous current with 4.5Ohm on-state resistance, while the STD4NK80Z-1 supports 3A continuous current with 3.5Ohm on-state resistance. The STD4NK80Z-1 provides higher current capacity and lower conduction losses at the cost of increased gate charge (22.5nC versus 19nC).

Q: Why is the IRFU1N60APBF listed as a substitute if it has lower voltage and current ratings?

A: The IRFU1N60APBF is included as an alternative for applications where circuit voltage requirements have been reduced to 600V or lower. It is not a direct replacement for 800V applications. This part is suitable only for circuit variants with modified voltage specifications.

Q: Are all substitute parts available in the same package as the IXTU2N80P?

A: All substitute parts use TO-251 packaging with through-hole mounting, compatible with IXTU2N80P PCB layouts. The STU2N80K5, STD3NK80Z-1, and STD4NK80Z-1 use TO-251 (IPAK) designation, while the IRFU1N60APBF uses TO-251AA designation. Both designations refer to the same physical package footprint.

Q: What is the impact of higher gate charge in the STD4NK80Z-1 compared to the IXTU2N80P?

A: The STD4NK80Z-1 has gate charge of 22.5nC compared to 10.6nC in the IXTU2N80P. Higher gate charge requires increased gate driver current or longer switching times. This affects gate driver power consumption and switching frequency capability. Verify gate driver specifications support the higher gate charge requirement.

Q: Are all substitute parts RoHS compliant?

A: Yes. The STU2N80K5, STD3NK80Z-1, STD4NK80Z-1, and IRFU1N60APBF are all ROHS3 compliant. The IXTU2N80P RoHS status is not specified in the provided data.

Q: Which substitute part offers the best thermal performance?

A: The STU2N80K5 offers the best thermal performance for equivalent current ratings, with the lowest on-state resistance (4.5Ohm) and lowest gate charge (9.5nC) among 2A-rated devices. The STD4NK80Z-1 provides the lowest on-state resistance overall (3.5Ohm) but at higher current rating (3A) and increased gate charge.

Q: Can the STD3NK80Z-1 or STD4NK80Z-1 be used in applications requiring exactly 2A current?

A: Yes. Both devices support continuous current ratings exceeding 2A (2.5A and 3A respectively), making them suitable for 2A applications. The higher current rating provides design margin and improved thermal headroom. No circuit modifications are required.

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